Publications
Selected publications
- Self-compensation in transparent conducting F-doped SnO2 (Journal article - 2018)
- Computational Prediction and Experimental Realization of Earth-Abundant Transparent Conducting Oxide Ga-Doped ZnSb<sub>2</sub>O<sub>6</sub> (Journal article - 2022)
- Tackling Disorder in γ-Ga<sub>2</sub> O<sub>3</sub>. (Journal article - 2022)
- Ge 4s2 Lone Pairs and Band Alignments in GeS and GeSe for photovoltaics (Journal article - 2021)
- Na2Fe2OS2, a new earth abundant oxysulphide cathode material for Na-ion batteries (Journal article - 2020)
- Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2 (Journal article - 2020)
2024
Synthesis, Structure, and Properties of CuBiSeCl<sub>2</sub>: A Chalcohalide Material with Low Thermal Conductivity.
Hawkins, C. J., Newnham, J. A., Almoussawi, B., Gulay, N. L., Goodwin, S. L., Zanella, M., . . . Rosseinsky, M. J. (2024). Synthesis, Structure, and Properties of CuBiSeCl<sub>2</sub>: A Chalcohalide Material with Low Thermal Conductivity.. Chemistry of materials : a publication of the American Chemical Society, 36(9), 4530-4541. doi:10.1021/acs.chemmater.4c00188
Synthesis, Structure &amp; Properties of CuBiSeCl2: A Chalcohalide Material with Low Thermal Conductivity
Understanding the Role of Organic Hole Transport Layers on Pinhole Blocking and Performance Improvement in Sb<sub>2</sub>Se<sub>3</sub> Solar Cells
Shalvey, T. P., Don, C. H., Bowen, L., Veal, T. D., & Major, J. D. (n.d.). Understanding the Role of Organic Hole Transport Layers on Pinhole Blocking and Performance Improvement in Sb<sub>2</sub>Se<sub>3</sub> Solar Cells. Advanced Materials Interfaces. doi:10.1002/admi.202400394
2023
Synthesis, Structure &amp; Properties of CuBiSeCl2: A Chalcohalide Material with Low Thermal Conductivity
Liverpool women in physics: Initiatives and progress
Andreopoulos, C., Brown, H., Darnley, M. J., Dhinsey, S., Jones, L. A. H., Lucas, C., . . . Welsch, C. P. (2023). Liverpool women in physics: Initiatives and progress. In WOMEN IN PHYSICS: 7th IUPAP International Conference on Women in Physics. AIP Publishing. doi:10.1063/5.0175667
Core hole electron screening in InSb
Alsawi, A., Sait, C. R. J., Hesp, D., Unsworth, P., Ashwin, M. J., Dhanak, V. R., . . . Weightman, P. (2023). Core hole electron screening in InSb. Journal of Electron Spectroscopy and Related Phenomena, 269, 147402. doi:10.1016/j.elspec.2023.147402
n-type CdTe:In for photovoltaics: in situ doping, type verification and compensation effects
Hobson, T. D. C., Thomas, L., Phillips, L. J., Jones, L. A. H., Smiles, M. J., Don, C. H., . . . Durose, K. (2023). n-type CdTe:In for photovoltaics: in situ doping, type verification and compensation effects. Journal of Physics: Energy, 5(4), 045012. doi:10.1088/2515-7655/acfbf8
Multi-Phase Sputtered TiO<sub>2</sub>-Induced Current-Voltage Distortion in Sb<sub>2</sub>Se<sub>3</sub> Solar Cells
Don, C. H., Shalvey, T. P., Smiles, M. J., Thomas, L., Phillips, L. J., Hobson, T. D. C., . . . Major, J. D. (2023). Multi-Phase Sputtered TiO<sub>2</sub>-Induced Current-Voltage Distortion in Sb<sub>2</sub>Se<sub>3</sub> Solar Cells. ADVANCED MATERIALS INTERFACES, 10(20). doi:10.1002/admi.202300238
Looking Outside the Square: The Growth, Structure, and Resilient Two-Dimensional Surface Electron Gas of Square SnO<sub>2</sub> Nanotubes
Scott, J. I., Adams, R. L., Martinez-Gazoni, R. F., Carroll, L. R., Downard, A. J., Veal, T. D., . . . Allen, M. W. (2023). Looking Outside the Square: The Growth, Structure, and Resilient Two-Dimensional Surface Electron Gas of Square SnO<sub>2</sub> Nanotubes. SMALL, 19(28). doi:10.1002/smll.202300520
Fluorine-Rich Oxyfluoride Spinel-like Li1.25Ni0.625Mn1.125O3F Utilizing Redox-Active Ni and Mn for High Capacity and Improved Cyclability
Cai, H., Chen, R., Bahri, M., Hawkins, C. J., Sonni, M., Daniels, L. M., . . . Rosseinsky, M. J. (2023). Fluorine-Rich Oxyfluoride Spinel-like Li1.25Ni0.625Mn1.125O3F Utilizing Redox-Active Ni and Mn for High Capacity and Improved Cyclability. ACS MATERIALS LETTERS. doi:10.1021/acsmaterialslett.2c00973
2022
Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2)
Jones, L., Xing, Z., Swallow, J., Shiel, H., Featherstone, T., Smiles, M., . . . Dhanak, V. (2022). Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2). The Journal of Physical Chemistry C: Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter. doi:10.1021/acs.jpcc.2c05100
Computational Prediction and Experimental Realization of Earth-Abundant Transparent Conducting Oxide Ga-Doped ZnSb<sub>2</sub>O<sub>6</sub>
Jackson, A. J., Parrett, B. J., Willis, J., Ganose, A. M., Leung, W. W. W., Liu, Y., . . . Scanlon, D. O. (2022). Computational Prediction and Experimental Realization of Earth-Abundant Transparent Conducting Oxide Ga-Doped ZnSb2O6. ACS ENERGY LETTERS, 7(11), 3807-3816. doi:10.1021/acsenergylett.2c01961
Fluorine-Rich Oxyfluoride Spinel Li1.25Ni0.625Mn1.125O3F Utilizing Redox-Active Ni and Mn for High Capacity and Improved Cyclability
Insights into post-growth doping and proposals for CdTe:In photovoltaic devices
Thomas, L., Hobson, T. D. C., Phillips, L. J., Cheetham, K. J., Tarbuck, N., Jones, L. A. H., . . . Durose, K. (2022). Insights into post-growth doping and proposals for CdTe:In photovoltaic devices. JOURNAL OF PHYSICS-ENERGY, 4(4). doi:10.1088/2515-7655/ac7ad5
P-type conductivity in Sn-doped Sb<sub>2</sub>Se<sub>3</sub>
Hobson, T. D. C., Shiel, H., Savory, C. N., Swallow, J. E. N., Jones, L. A. H., Featherstone, T. J., . . . Major, J. D. (2022). P-type conductivity in Sn-doped Sb<sub>2</sub>Se<sub>3</sub>. Journal of Physics: Energy, 4(4), 045006. doi:10.1088/2515-7655/ac91a6
Tackling Disorder in γ-Ga<sub>2</sub> O<sub>3</sub>.
Ratcliff, L. E., Oshima, T., Nippert, F., Janzen, B. M., Kluth, E., Goldhahn, R., . . . Regoutz, A. (2022). Tackling Disorder in γ-Ga<sub>2</sub>O<sub>3</sub>. ADVANCED MATERIALS, 34(37). doi:10.1002/adma.202204217
Long-Life and pH-Stable SnO2-Coated Au Nanoparticles for SHINERS
Fernandez-Vidal, J., Gomez-Marin, A. M., Jones, L. A. H., Yen, C. -H., Veal, T. D., Dhanak, V. R., . . . Hardwick, L. J. (2022). Long-Life and pH-Stable SnO<sub>2</sub>-Coated Au Nanoparticles for SHINERS. JOURNAL OF PHYSICAL CHEMISTRY C. doi:10.1021/acs.jpcc.2c02432
Computational prediction and experimental realisation of earth abundant transparent conducting oxide Ga-doped ZnSb2O6
GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing
Cao, Z., Hulme, S., Veal, T. D., Ashwin, M. J., & Sandall, I. (n.d.). GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing. Frontiers in Electronic Materials, 2. doi:10.3389/femat.2022.895959
CdTe:In - Post-Growth Doping and Proposals for Photovoltaic Devices
Thomas, L., Hobaon, T. D. C., Phillips, L. J., Cheetham, K. J., Tarbuck, N., Isaacs, M., . . . Durose, K. (2022). CdTe:In - Post-Growth Doping and Proposals for Photovoltaic Devices. In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) (pp. 0577). IEEE. doi:10.1109/pvsc48317.2022.9938871
N-type CdTe Thin Films via In-Situ Indium Doping
Hobson, T. D. C., Thomas, L., Phillips, L. J., Jones, L. A. H., Smiles, M. J., Don, C. H., . . . Durose, K. (2022). N-type CdTe Thin Films via In-Situ Indium Doping. In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC) (pp. 1312). IEEE. doi:10.1109/pvsc48317.2022.9938559
GeSe photovoltaics: doping, interfacial layer and devices
Smiles, M., Shalvey, T., Thomas, L., Hobson, T. D. C., Jones, L. A. H., Phillips, L., . . . Veal, T. (n.d.). GeSe photovoltaics: doping, interfacial layer and devices. Faraday Discussions. doi:10.1039/d2fd00048b
Computational prediction and experimental realisation of earth abundant transparent conducting oxide Ga-doped ZnSb2O6
2021
Band offsets of metal oxide contacts on TlBr radiation detectors
Voyce, O. K., Isaacs, M. A., Harkness-Brennan, L. J., Veal, T. D., Judson, D. S., Motakef, S., & Datta, A. (2021). Band offsets of metal oxide contacts on TlBr radiation detectors. JOURNAL OF APPLIED PHYSICS, 130(17). doi:10.1063/5.0063365
Ge 4s2 Lone Pairs and Band Alignments in GeS and GeSe for photovoltaics
Smiles, M. J., Skelton, J., Shiel, H., Jones, L. A. H., Swallow, J., Edwards, H., . . . Veal, T. (n.d.). Ge 4s2 Lone Pairs and Band Alignments in GeS and GeSe for photovoltaics. Journal of Materials Chemistry A. doi:10.1039/d1ta05955f
Band Alignment of Sb₂O₃ and Sb₂Se₃
Shiel, H., Hobson, T. D. C., Hutter, O. S., Phillips, L. J., Smiles, M. J., Jones, L. A. H., . . . Veal, T. D. (2021). Band alignment of Sb<sub>2</sub>O<sub>3</sub> and Sb<sub>2</sub>Se<sub>3</sub>. JOURNAL OF APPLIED PHYSICS, 129(23). doi:10.1063/5.0055366
Accelerating the development of new solar absorbers by photoemission characterization coupled with density functional theory
Veal, T. D., Scanlon, D. O., Kostecki, R., & Arca, E. (2021). Accelerating the development of new solar absorbers by photoemission characterization coupled with density functional theory. JOURNAL OF PHYSICS-ENERGY, 3(3). doi:10.1088/2515-7655/abebc9
Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors
Swallow, J. E. N., Palgrave, R. G., Murgatroyd, P. A. E., Regoutz, A., Lorenz, M., Hassa, A., . . . Veal, T. D. (2021). Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors. ACS APPLIED MATERIALS & INTERFACES, 13(2), 2807-2819. doi:10.1021/acsami.0c16021
2020
Natural Band Alignments and Band Offsets of Sb<sub>2</sub>Se<sub>3</sub> Solar Cells
Shiel, H., Hutter, O. S., Phillips, L. J., Swallow, J. E. N., Jones, L. A. H., Featherstone, T. J., . . . Veal, T. D. (2020). Natural Band Alignments and Band Offsets of Sb<sub>2</sub>Se<sub>3</sub> Solar Cells. ACS APPLIED ENERGY MATERIALS, 3(12), 11617-11626. doi:10.1021/acsaem.0c01477
GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing
Cao, Z., Ashwin, M., Veal, T., Sandall, I., & IEEE. (2020). GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing. In 2020 IEEE PHOTONICS CONFERENCE (IPC). Retrieved from http://gateway.webofknowledge.com/
How Oxygen Exposure Improves the Back Contact and Performance of Antimony Selenide Solar Cells.
Fleck, N., Hutter, O. S., Phillips, L. J., Shiel, H., Hobson, T. D. C., Dhanak, V. R., . . . Major, J. D. (2020). How Oxygen Exposure Improves the Back Contact and Performance of Antimony Selenide Solar Cells.. ACS applied materials & interfaces, 12(47), 52595-52602. doi:10.1021/acsami.0c14256
Na2Fe2OS2, a new earth abundant oxysulphide cathode material for Na-ion batteries
Gamon, J., Perez, A. J., Jones, L. A. H., Zanella, M., Daniels, L. M., Morris, R. E., . . . Rosseinsky, M. J. (n.d.). Na2Fe2OS2, a new earth abundant oxysulphide cathode material for Na-ion batteries. Journal of Materials Chemistry A. doi:10.1039/d0ta07966a
Sb 5s2 lone pairs and band alignment of Sb2Se3: a photoemission and density functional theory study
Don, C. H., Shiel, H., Hobson, T. D. C., Savory, C. N., Swallow, J. E. N., Smiles, M. J., . . . Veal, T. D. (n.d.). Sb 5s2 lone pairs and band alignment of Sb2Se3: a photoemission and density functional theory study. Journal of Materials Chemistry C. doi:10.1039/d0tc03470c
Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics
Vazquez-Fernandez, I., Mariotti, S., Hutter, O. S., Birkett, M., Veal, T. D., Hobson, T. D. C., . . . Durose, K. (n.d.). Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. Chemistry of Materials. doi:10.1021/acs.chemmater.0c02150
Sn 5 s 2 lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation
Jones, L., Linhart, W., Fleck, N., Swallow, J., Murgatroyd, P., Shiel, H., . . . Dhanak, V. (n.d.). Sn 5s2 lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation. Physical Review Materials, 4. doi:10.1103/PhysRevMaterials.4.074602
Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$
Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$
Swallow, J. E. N., Vorwerk, C., Mazzolini, P., Vogt, P., Bierwagen, O., Karg, A., . . . Regoutz, A. (2020). Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>. CHEMISTRY OF MATERIALS, 32(19), 8460-8470. doi:10.1021/acs.chemmater.0c02465
Identifying Raman Modes of Sb2Se3 and their Symmetries using Angle-Resolved Polarised Raman Spectra
Fleck, N., Hobson, T., Savory, C., Buckeridge, J., Veal, T., Correia, M., . . . Jaeckel, F. (2020). Identifying Raman Modes of Sb2Se3 and their Symmetries using Angle-Resolved Polarised Raman Spectra. Journal of Materials Chemistry A, 8(17), 8337-8344. doi:10.1039/D0TA01783C
GeSe: optical spectroscopy and theoretical study of a van der Waals solar absorber
Murgatroyd, P. A. E., Smiles, M. J., Savory, C. N., Shalvey, T. P., Swallow, J. E. N., Fleck, N., . . . Veal, T. D. (2020). GeSe: Optical Spectroscopy and Theoretical Study of a van der Waals Solar Absorber. CHEMISTRY OF MATERIALS, 32(7), 3245-3253. doi:10.1021/acs.chemmater.0c00453
Isotype heterojunction solar cells using n-type Sb₂Se₃ thin films
Hobson, T. D. C., Phillips, L. J., Hutter, O. S., Shiel, H., Swallow, J. E. N., Savory, C. N., . . . Major, J. D. (2020). Isotype heterojunction solar cells using n-type Sb₂Se₃ thin films. Chemistry of Materials, 32(6), 2621-2630. doi:10.1021/acs.chemmater.0c00223
Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2
Williamson, B. A. D., Featherstone, T. J., Sathasivam, S. S., Swallow, J. E. N., Shiel, H., Jones, L. A. H., . . . Scanlon, D. O. (2020). Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2. Chemistry of Materials, 32(5), 1964-1973. doi:10.1021/acs.chemmater.9b04845
2019
Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2
Chemical etching of Sb<sub>2</sub>Se<sub>3</sub> solar cells: surface chemistry and back contact behaviour
Shiel, H., Hutter, O. S., Phillips, L. J., Al Turkestani, M., Dhanak, V. R., Veal, T. D., . . . Major, J. D. (2019). Chemical etching of Sb<sub>2</sub>Se<sub>3</sub> solar cells: surface chemistry and back contact behaviour. JOURNAL OF PHYSICS-ENERGY, 1(4). doi:10.1088/2515-7655/ab3c98
Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3
Swallow, J. E. N., Williamson, B. A. D., Sathasivam, S., Birkett, M., Featherstone, T. J., Murgatroyd, P. A. E., . . . Veal, T. D. (2020). Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3. Materials Horizons, 7(1), 236-243. doi:10.1039/c9mh01014a
Band Alignments, Band Gap, Core-levels and Valence-Band States in Cu3BiS3 for Photovoltaics
Whittles, T. J., Veal, T. D., Savory, C. N., Yates, P. J., Murgatroyd, P. A. E., Gibbon, J. T., . . . Dhanak, V. R. (2019). Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu<sub>3</sub>BiS<sub>3</sub> for Photovoltaics. ACS APPLIED MATERIALS & INTERFACES, 11(30), 27033-27047. doi:10.1021/acsami.9b04268
Intrinsic point defects and the <i>n</i>- and <i>p</i>-type dopability of the narrow gap semiconductors GaSb and InSb
Buckeridge, J., Veal, T. D., Catlow, C. R. A., & Scanlon, D. O. (2019). Intrinsic point defects and the <i>n</i>- and <i>p</i>-type dopability of the narrow gap semiconductors GaSb and InSb. PHYSICAL REVIEW B, 100(3). doi:10.1103/PhysRevB.100.035207
Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2
Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., . . . Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2. Physical Review Materials, 3. doi:10.1103/PhysRevMaterials.3.074602
Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level
Swallow, J., Varley, J., Jones, L., Gibbon, J., Piper, L., Dhanak, V., & Veal, T. D. (2019). Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level. APL Materials, 7(02). doi:10.1063/1.5054091
Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys
Linhart, W. M., Rajpalke, M. K., Birkett, M., Walker, D., Ashwin, M. J., & Veal, T. D. (2019). Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(4). doi:10.1088/1361-6463/aaeec9
2018
A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide
Swallow, J. E. N., Williamson, B. A. D., Birkett, M., Abbott, A., Farnworth, M., Featherstone, T. J., . . . Veal, T. D. (2018). A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 3051-3055). Retrieved from https://www.webofscience.com/
Growth and Characterization of Sb<sub>2</sub>Se<sub>3</sub> Single Crystals for Fundamental Studies
Hobson, T. D. C., Hutter, O. S., Birkett, M., Veal, T. D., & Durose, K. (2018). Growth and Characterization of Sb<sub>2</sub>Se<sub>3</sub> Single Crystals for Fundamental Studies. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 0818-0822). Retrieved from https://www.webofscience.com/
Transparent Ta doped SnO<sub>2</sub> films deposited by RF co-sputtering
Featherstone, T. J., Swallow, J. E. N., Major, J. D., Durose, K., & Veal, T. D. (2018). Transparent Ta doped SnO<sub>2</sub> films deposited by RF co-sputtering. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 2980-2984). Retrieved from https://www.webofscience.com/
Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2
Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207
Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
Birkett, M., Linhart, W., Stoner, J., Phillips, L. J., Durose, K., Alaria, J., . . . Veal, T. D. (2018). Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance. APL Materials, 6(8), 8 pages. doi:10.1063/1.5027157
Self-compensation in transparent conducting F-doped SnO2
Swallow, J. E. N., Williamson, B. A. D., Whittles, T. J., Birkett, M., Featherstone, T. J., Peng, N., . . . Veal, T. D. (2018). Self-Compensation in Transparent Conducting F-Doped SnO<sub>2</sub>. ADVANCED FUNCTIONAL MATERIALS, 28(4). doi:10.1002/adfm.201701900
2017
Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO
Arca, E., Kehoe, A. B., Veal, T. D., Shmeliov, A., Scanlon, D. O., Downing, C., . . . Watson, G. W. (2017). Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO. Journal of Materials Chemistry C. doi:10.1039/C7TC03545D
Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications
Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208
Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys
Linhart, W. M., Gladysiewicz, M., Kopaczek, J., Rajpalke, M. K., Ashwin, M. J., Veal, T. D., & Kudrawiec, R. (2017). Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50(37). doi:10.1088/1361-6463/aa7e64
Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x
Segercrantz, N., Slotte, J., Makonnen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J., & Veal, T. D. (2017). Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50(29), 6 pages. doi:10.1088/1361-6463/aa779a
Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors
Anyebe, E., Sandall, I., Jin, Z., Sanchez, A., Rajpalke, M., Veal, T., . . . Zhuang, Q. (2017). Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports, 7. doi:10.1038/srep46110
Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N
Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201
2016
Band gap reduction in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys: Optical absorption, k . P modeling, and density functional theory
Linhart, W. M., Rajpalke, M. K., Buckeridge, J., Murgatroyd, P. A. E., Bomphrey, J. J., Alaria, J., . . . Veal, T. D. (2016). Band gap reduction in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys: Optical absorption, k . P modeling, and density functional theory. APPLIED PHYSICS LETTERS, 109(13). doi:10.1063/1.4963836
Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires
Speckbacher, M., Treu, J., Whittles, T. J., Linhart, W. M., Xu, X., Saller, K., . . . Koblmüller, G. (2016). Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 16(8), 5135-5142. doi:10.1021/acs.nanolett.6b02061
Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory
Whittles, T., Burton, L., Skelton, J., Walsh, A., Veal, T. D., & Dhanak, V. R. (2016). Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory. Chemistry of Materials, 28(11), 3718-3726. doi:10.1021/acs.chemmater.6b00397
Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst
Burton, L. A., Whittles, T. J., Hesp, D., Linhart, W. M., Skelton, J. M., Hou, B., . . . Walsh, A. (2016). Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst. JOURNAL OF MATERIALS CHEMISTRY A, 4(4), 1312-1318. doi:10.1039/c5ta08214e
2015
Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber
Veal, T., Feldberg, N., Quackenbush, N. F., Linhart, W. M., Scanlon, D. O., Piper, L. F. J., & Durbin, S. M. (2015). Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber. Advanced Energy Materials, 5(24). doi:10.1002/aenm.201501462
Increased <i>p</i>-type conductivity in GaN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>, experimental and theoretical aspects
Segercrantz, N., Makkonen, I., Slotte, J., Kujala, J., Veal, T. D., Ashwin, M. J., & Tuomisto, F. (2015). Increased <i>p</i>-type conductivity in GaN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>, experimental and theoretical aspects. JOURNAL OF APPLIED PHYSICS, 118(8). doi:10.1063/1.4929751
Bi flux-dependent MBE growth of GaSbBi alloys
Rajpalke, M. K., Linhart, W. M., Yu, K. M., Jones, T. S., Ashwin, M. J., & Veal, T. D. (2015). Bi flux-dependent MBE growth of GaSbBi alloys. JOURNAL OF CRYSTAL GROWTH, 425, 241-244. doi:10.1016/j.jcrysgro.2015.02.093
Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite
Anyebe, E. A., Sanchez, A. M., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., . . . Zhuang, Q. (2015). Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite. NANO LETTERS, 15(7), 4348-4355. doi:10.1021/acs.nanolett.5b00411
Origin of High Mobility in Molybdenum-Doped Indium Oxide
Bhachu, D. S., Scanlon, D. O., Sankar, G., Veal, T. D., Egdell, R. G., Cibin, G., . . . Parkin, I. P. (2015). Origin of High Mobility in Molybdenum-Doped Indium Oxide. CHEMISTRY OF MATERIALS, 27(8), 2788-2796. doi:10.1021/cm503896h
Surfactant effect of antimony addition to the morphology of self-catalyzed InAs<sub>1-<i>x</i></sub> Sb <i><sub>x</sub></i> nanowires
Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., & Zhuang, Q. D. (2015). Surfactant effect of antimony addition to the morphology of self-catalyzed InAs<sub>1-<i>x</i></sub> Sb <i><sub>x</sub></i> nanowires. NANO RESEARCH, 8(4), 1309-1319. doi:10.1007/s12274-014-0621-x
Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy
Zhuang, Q. D., Anyebe, E. A., Chen, R., Liu, H., Sanchez, A. M., Rajpalke, M. K., . . . Sun, H. D. (2015). Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy. Nano Letters, 15(02), 1109-1116. doi:10.1021/nl5040946
2014
Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP<sub>1-x</sub>Bi<sub>x</sub> dilute bismide with x ≤ 0.034
Kopaczek, J., Kudrawiec, R., Polak, M. P., Scharoch, P., Birkett, M., Veal, T. D., . . . Wang, S. (2014). Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP<sub>1-x</sub>Bi<sub>x</sub> dilute bismide with x ≤ 0.034. APPLIED PHYSICS LETTERS, 105(22). doi:10.1063/1.4903179
Bi-induced band gap reduction in epitaxial InSbBi alloys
Rajpalke, M., Linhart, W., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., . . . Veal, T. (2014). Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105(21). doi:10.1063/1.4902442
Low- and high-energy photoluminescence from GaSb<sub>1-<i>x</i></sub>Bi<i><sub>x</sub></i> with 0 < <i>x</i> ≤ 0.042
Kopaczek, J., Kudrawiec, R., Linhart, W., Rajpalke, M., Jones, T., Ashwin, M., & Veal, T. (2014). Low- and high-energy photoluminescence from GaSb<sub>1-<i>x</i></sub>Bi<i><sub>x</sub></i> with 0 < <i>x</i> ≤ 0.042. APPLIED PHYSICS EXPRESS, 7(11). doi:10.7567/APEX.7.111202
Valence-band density of states and surface electron accumulation in epitaxial SnO<sub>2</sub> films
Farahani, S. K. V., Veal, T. D., Mudd, J. J., Scanlon, D. O., Watson, G. W., Bierwagen, O., . . . McConville, C. F. (2014). Valence-band density of states and surface electron accumulation in epitaxial SnO<sub>2</sub> films. PHYSICAL REVIEW B, 90(15). doi:10.1103/PhysRevB.90.155413
Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
Kopaczek, J., Rajpalke, M. K., Linhart, W. M., Jones, T. S., Ashwin, M. J., Kudrawiec, R., & Veal, T. D. (2014). Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. APPLIED PHYSICS LETTERS, 105(11). doi:10.1063/1.4895930
Theoretical and experimental studies of electronic band structure for GaSb<sub>1-x</sub>Bi<sub>x</sub> in the dilute Bi regime
Polak, M. P., Scharoch, P., Kudrawiec, R., Kopaczek, J., Winiarski, M. J., Linhart, W. M., . . . Veal, T. D. (2014). Theoretical and experimental studies of electronic band structure for GaSb<sub>1-x</sub>Bi<sub>x</sub> in the dilute Bi regime. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(35). doi:10.1088/0022-3727/47/35/355107
High Bi content GaSbBi alloys
Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Alaria, J., Kopaczek, J., . . . Veal, T. D. (2014). High Bi content GaSbBi alloys. JOURNAL OF APPLIED PHYSICS, 116(4). doi:10.1063/1.4891217
Growth of ZnSnN<sub>2</sub> by Molecular Beam Epitaxy
Feldberg, N., Aldous, J. D., Stampe, P. A., Kennedy, R. J., Veal, T. D., & Durbin, S. M. (2014). Growth of ZnSnN<sub>2</sub> by Molecular Beam Epitaxy. JOURNAL OF ELECTRONIC MATERIALS, 43(4), 884-888. doi:10.1007/s11664-013-2962-8
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091
N incorporation and associated localized vibrational modes in GaSb
Buckeridge, J., Scanlon, D. O., Veal, T. D., Ashwin, M. J., Walsh, A., & Catlow, C. R. A. (2014). N incorporation and associated localized vibrational modes in GaSb. PHYSICAL REVIEW B, 89(1). doi:10.1103/PhysRevB.89.014107
Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy
Zhuang, Q. D., Anyebe, E. A., Sanchez, A. M., Rajpalke, M. K., Veal, T. D., Zhukov, A., . . . Fal'ko, V. (2014). Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. NANOSCALE RESEARCH LETTERS, 9. doi:10.1186/1556-276X-9-321
2013
Temperature dependence of the band gap of GaSb<sub>1-x</sub>Bi<sub>x</sub> alloys with 0 < x ≤ 0.042 determined by photoreflectance
Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, M. K., Yu, K. M., Jones, T. S., . . . Veal, T. D. (2013). Temperature dependence of the band gap of GaSb<sub>1-x</sub>Bi<sub>x</sub> alloys with 0 < x ≤ 0.042 determined by photoreflectance. APPLIED PHYSICS LETTERS, 103(26). doi:10.1063/1.4858967
Materials Research Society Symposium Proceedings: Preface
Schleife, A., Allen, M., Arnold, C. B., Durbin, S. M., Pryds, N., Schneider, C. W., & Veal, T. (2013). Materials Research Society Symposium Proceedings: Preface. In Materials Research Society Symposium Proceedings Vol. 1494.
The first 25 years of semiconductor muonics at ISIS, modelling the electrical activity of hydrogen in inorganic semiconductors and high-κ dielectrics
Cox, S. F. J., Lichti, R. L., Lord, J. S., Davis, E. A., Vilao, R. C., Gil, J. M., . . . Celebi, Y. G. (2013). The first 25 years of semiconductor muonics at ISIS, modelling the electrical activity of hydrogen in inorganic semiconductors and high-κ dielectrics. PHYSICA SCRIPTA, 88(6). doi:10.1088/0031-8949/88/06/068503
Growth and properties of GaSbBi alloys
Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Scanlon, D. O., Buckeridge, J., . . . Veal, T. D. (2013). Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103(14). doi:10.1063/1.4824077
Sulfur passivation of surface electrons in highly Mg-doped InN
Linhart, W. M., Chai, J., McConville, C. F., Durbin, S. M., & Veal, T. D. (2013). Sulfur passivation of surface electrons in highly Mg-doped InN. JOURNAL OF APPLIED PHYSICS, 114(10). doi:10.1063/1.4820483
Growth, disorder, and physical properties of ZnSnN<inf>2</inf>
Feldberg, N., Aldous, J. D., Linhart, W. M., Phillips, L. J., Durose, K., Stampe, P. A., . . . Durbin, S. M. (2013). Growth, disorder, and physical properties of ZnSnN<sub>2</sub>. APPLIED PHYSICS LETTERS, 103(4). doi:10.1063/1.4816438
Optical absorption by dilute GaNSb alloys: Influence of N pair states
Mudd, J. J., Kybert, N. J., Linhart, W. M., Buckle, L., Ashley, T., King, P. D. C., . . . Veal, T. D. (2013). Optical absorption by dilute GaNSb alloys: Influence of N pair states. APPLIED PHYSICS LETTERS, 103(4). doi:10.1063/1.4816519
Molecular-beam epitaxy and lattice parameter of GaN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>: deviation from Vegard's law for <i>x</i> > 0.02
Ashwin, M. J., Morris, R. J. H., Walker, D., Thomas, P. A., Dowsett, M. G., Jones, T. S., & Veal, T. D. (2013). Molecular-beam epitaxy and lattice parameter of GaN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>: deviation from Vegard's law for <i>x</i> > 0.02. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46(26). doi:10.1088/0022-3727/46/26/264003
Impact of degenerate <i>n</i>-doping on the optical absorption edge in transparent conducting cadmium oxide
Farahani, S. K. V., McConville, C. F., Veal, T. D., & Schleife, A. (2013). Impact of degenerate <i>n</i>-doping on the optical absorption edge in transparent conducting cadmium oxide. OXIDE-BASED MATERIALS AND DEVICES IV, 8626. doi:10.1117/12.2004359
N incorporation in GaInNSb alloys and lattice matching to GaSb
Ashwin, M. J., Walker, D., Thomas, P. A., Jones, T. S., & Veal, T. D. (2013). N incorporation in GaInNSb alloys and lattice matching to GaSb. JOURNAL OF APPLIED PHYSICS, 113(3). doi:10.1063/1.4775745
Temperature dependence of the direct bandgap and transport properties of CdO
Farahani, S. K. V., Munoz-Sanjose, V., Zuniga-Perez, J., McConville, C. F., & Veal, T. D. (2013). Temperature dependence of the direct bandgap and transport properties of CdO. APPLIED PHYSICS LETTERS, 102(2). doi:10.1063/1.4775691
2012
Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO<sub>2</sub> on sapphire
Farahani, S. K. V., Veal, T. D., Sanchez, A. M., Bierwagen, O., White, M. E., Gorfman, S., . . . McConville, C. F. (2012). Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO<sub>2</sub> on sapphire. PHYSICAL REVIEW B, 86(24). doi:10.1103/PhysRevB.86.245315
Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants
Linhart, W. M., Chai, J., Morris, R. J. H., Dowsett, M. G., McConville, C. F., Durbin, S. M., & Veal, T. D. (2012). Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants. PHYSICAL REVIEW LETTERS, 109(24). doi:10.1103/PhysRevLett.109.247605
Epitaxial InGaN on Nitridated Si(111) for Photovoltaic Applications
Yao, Y., Aldous, J. D., Won, D., Redwing, J. M., Linhart, W., McConville, C. F., . . . Durbin, S. M. (2012). Epitaxial InGaN on Nitridated Si(111) for Photovoltaic Applications. In 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) (pp. 2617-2620). Retrieved from https://www.webofscience.com/
ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells
Feldberg, N., Keen, B., Aldous, J. D., Scanlon, D. O., Stampe, P. A., Kennedy, R. J., . . . Durbin, S. M. (2012). ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells. In 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) (pp. 2524-2527). Retrieved from https://www.webofscience.com/
Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers
Tuna, O., Linhart, W. M., Lutsenko, E. V., Rzheutski, M. V., Yablonskii, G. P., Veal, T. D., . . . Heuken, M. (2012). Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers. JOURNAL OF CRYSTAL GROWTH, 358, 51-56. doi:10.1016/j.jcrysgro.2012.07.040
Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces
Veal, T. D., King, P. D. C., & McConville, C. F. (2012). Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces. Unknown Journal, 127-145. doi:10.1007/978-1-4419-9931-3_6
Introduction
Durbin, S., Veal, T., Grundmann, M., & Phillips, J. (2012). Introduction. JOURNAL OF MATERIALS RESEARCH, 27(17), 2179. doi:10.1557/jmr.2012.263
Self-compensation in highly n-type InN
Rauch, C., Tuomisto, F., King, P. D. C., Veal, T. D., Lu, H., & Schaff, W. J. (2012). Self-compensation in highly n-type InN. APPLIED PHYSICS LETTERS, 101(1). doi:10.1063/1.4732508
Self-compensation in highly n-type InN
MBE growth and characterization of Mn-doped InN
Chai, J. H., Myers, T. H., Song, Y. -W., Reeves, R. J., Linhart, W. M., Morris, R. J. H., . . . Durbin, S. M. (2012). MBE growth and characterization of Mn-doped InN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2). doi:10.1116/1.3687903
Surface electronic properties of In-rich InGaN alloys grown by MOCVD
Linhart, W. M., Tuna, O., Veal, T. D., Mudd, J. J., Giesen, C., Heuken, M., & McConville, C. F. (2012). Surface electronic properties of In-rich InGaN alloys grown by MOCVD. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 9(3-4), 662-665. doi:10.1002/pssc.201100463
2011
Controlled nitrogen incorporation in GaNSb alloys
Ashwin, M. J., Veal, T. D., Bomphrey, J. J., Dunn, I. R., Walker, D., Thomas, P. A., & Jones, T. S. (2011). Controlled nitrogen incorporation in GaNSb alloys. AIP ADVANCES, 1(3). doi:10.1063/1.3643259
Conductivity in transparent oxide semiconductors
King, P. D. C., & Veal, T. D. (2011). Conductivity in transparent oxide semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 23(33). doi:10.1088/0953-8984/23/33/334214
Thickness dependence of the strain, band gap and transport properties of epitaxial In<sub>2</sub>O<sub>3</sub> thin films grown on Y-stabilised ZrO<sub>2</sub>(111)
Zhang, K. H. L., Lazarov, V. K., Veal, T. D., Oropeza, F. E., McConville, C. F., Egdell, R. G., & Walsh, A. (2011). Thickness dependence of the strain, band gap and transport properties of epitaxial In<sub>2</sub>O<sub>3</sub> thin films grown on Y-stabilised ZrO<sub>2</sub>(111). JOURNAL OF PHYSICS-CONDENSED MATTER, 23(33). doi:10.1088/0953-8984/23/33/334211
Stable passivation of InN surface electron accumulation with sulphur treatment
Bailey, L. R., Veal, T. D., & McConville, C. F. (2011). Stable passivation of InN surface electron accumulation with sulphur treatment. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 8(5). doi:10.1002/pssc.201100552
Electron mobility in CdO films
Farahani, S. K. V., Veal, T. D., King, P. D. C., Zuniga-Perez, J., Munoz-Sanjose, V., & McConville, C. F. (2011). Electron mobility in CdO films. JOURNAL OF APPLIED PHYSICS, 109(7). doi:10.1063/1.3562141
Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
Allen, M. W., Zemlyanov, D. Y., Waterhouse, G. I. N., Metson, J. B., Veal, T. D., McConville, C. F., & Durbin, S. M. (2011). Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. APPLIED PHYSICS LETTERS, 98(10). doi:10.1063/1.3562308
2010
Surface, bulk, and interface electronic properties of nonpolar InN
Linhart, W. M., Veal, T. D., King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, J. S., & McConville, C. F. (2010). Surface, bulk, and interface electronic properties of nonpolar InN. APPLIED PHYSICS LETTERS, 97(11). doi:10.1063/1.3488821
Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers
King, P. D. C., Veal, T. D., McConville, C. F., Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., . . . Hofmann, P. (2010). Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers. PHYSICAL REVIEW LETTERS, 104(25). doi:10.1103/PhysRevLett.104.256803
In-vacancies in Si-doped InN
Rauch, C., Reurings, F., Tuomisto, F., Veal, T. D., McConville, C. F., Lu, H., . . . Sojak, S. (2010). In-vacancies in Si-doped InN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(5), 1083-1086. doi:10.1002/pssa.200983120
Bulk transport measurements in ZnO: The effect of surface electron layers
Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D., McConville, C. F., & Durbin, S. M. (2010). Bulk transport measurements in ZnO: The effect of surface electron layers. PHYSICAL REVIEW B, 81(7). doi:10.1103/PhysRevB.81.075211
Observation of shallow-donor muonium in Ga<sub>2</sub>O<sub>3</sub>: Evidence for hydrogen-induced conductivity
King, P. D. C., McKenzie, I., & Veal, T. D. (2010). Observation of shallow-donor muonium in Ga<sub>2</sub>O<sub>3</sub>: Evidence for hydrogen-induced conductivity. APPLIED PHYSICS LETTERS, 96(6). doi:10.1063/1.3309694
2009
Sulfur passivation of InN surface electron accumulation
Bailey, L. R., Veal, T. D., Kendrick, C. E., Durbin, S. M., & McConville, C. F. (2009). Sulfur passivation of InN surface electron accumulation. APPLIED PHYSICS LETTERS, 95(19). doi:10.1063/1.3263725
Surface Structure and Electronic Properties of In<sub>2</sub>O<sub>3</sub>(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO<sub>2</sub>(111)
Zhang, K. H. L., Payne, D. J., Palgrave, R. G., Lazarov, V. K., Chen, W., Wee, A. T. S., . . . Egdell, R. G. (2009). Surface Structure and Electronic Properties of In<sub>2</sub>O<sub>3</sub>(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO<sub>2</sub>(111). CHEMISTRY OF MATERIALS, 21(19), 4353-4355. doi:10.1021/cm901127r
Indium Nitride and Related Alloys
Veal, T. D., McConville, C. F., & Schaff, W. J. (2009). Indium Nitride and Related Alloys. CRC Press.
Shallow donor state of hydrogen in In<sub>2</sub>O<sub>3</sub> and SnO<sub>2</sub>: Implications for conductivity in transparent conducting oxides
King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., . . . Veal, T. D. (2009). Shallow donor state of hydrogen in In<sub>2</sub>O<sub>3</sub> and SnO<sub>2</sub>: Implications for conductivity in transparent conducting oxides. PHYSICAL REVIEW B, 80(8). doi:10.1103/PhysRevB.80.081201
The influence of Sn doping on the growth of In<sub>2</sub>O<sub>3</sub> on Y-stabilized ZrO<sub>2</sub>(100) by oxygen plasma assisted molecular beam epitaxy
Bourlange, A., Payne, D. J., Palgrave, R. G., Zhang, H., Foord, J. S., Egdell, R. G., . . . McConville, C. F. (2009). The influence of Sn doping on the growth of In<sub>2</sub>O<sub>3</sub> on Y-stabilized ZrO<sub>2</sub>(100) by oxygen plasma assisted molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(1). doi:10.1063/1.3153966
Surface electronic properties of Mg-doped InAlN alloys
King, P. D. C., Veal, T. D., Schaff, W. J., & McConville, C. F. (2009). Surface electronic properties of Mg-doped InAlN alloys. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(6), 1169-1172. doi:10.1002/pssb.200880766
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In<sub>2</sub>O<sub>3</sub>
King, P. D. C., Veal, T. D., Fuchs, F., Wang, C. Y., Payne, D. J., Bourlange, A., . . . McConville, C. F. (2009). Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In<sub>2</sub>O<sub>3</sub>. PHYSICAL REVIEW B, 79(20). doi:10.1103/PhysRevB.79.205211
Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations
King, P. D. C., Veal, T. D., Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., . . . McConville, C. F. (2009). Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. PHYSICAL REVIEW B, 79(20). doi:10.1103/PhysRevB.79.205205
Unintentional conductivity of indium nitride: transport modelling and microscopic origins
King, P. D. C., Veal, T. D., & McConville, C. F. (2009). Unintentional conductivity of indium nitride: transport modelling and microscopic origins. JOURNAL OF PHYSICS-CONDENSED MATTER, 21(17). doi:10.1088/0953-8984/21/17/174201
Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
Buckle, L., Coomber, S. D., Ashley, T., Jefferson, P. H., Walker, D., Veal, T. D., . . . Thomas, P. A. (2009). Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. MICROELECTRONICS JOURNAL, 40(3), 399-402. doi:10.1016/j.mejo.2008.06.007
The donor nature of muonium in undoped, heavily n-type and p-type InAs
King, P. D. C., Veal, T. D., McConville, C. F., King, P. J. C., Cox, S. F. J., Celebi, Y. G., & Lichti, R. L. (2009). The donor nature of muonium in undoped, heavily n-type and p-type InAs. JOURNAL OF PHYSICS-CONDENSED MATTER, 21(7). doi:10.1088/0953-8984/21/7/075803
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
King, P. D. C., Veal, T. D., Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V., & McConville, C. F. (2009). Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. PHYSICAL REVIEW B, 79(3). doi:10.1103/PhysRevB.79.035203
2008
Band bending at the surfaces of In-rich InGaN alloys
Bailey, L. R., Veal, T. D., King, P. D. C., McConville, C. F., Pereiro, J., Grandal, J., . . . Calleja, E. (2008). Band bending at the surfaces of In-rich InGaN alloys. JOURNAL OF APPLIED PHYSICS, 104(11). doi:10.1063/1.3033373
Mechanisms in the formation of high quality Schottky contacts to n-type ZnO
Allen, M., Von Wenckstern, H., Grundmann, M., Hatfield, S., Jefferson, P., King, P., . . . Durbin, S. (2008). Mechanisms in the formation of high quality Schottky contacts to n-type ZnO. In Materials Research Society Symposium Proceedings Vol. 1035 (pp. 11-16).
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
Veal, T. D., King, P. D. C., Hatfield, S. A., Bailey, L. R., McConville, C. F., Martel, B., . . . Zuniga-Perez, J. (2008). Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy. APPLIED PHYSICS LETTERS, 93(20). doi:10.1063/1.3032911
<i>Ab</i>-<i>Initio</i> Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO
Schleife, A., Roedl, C., Fuchs, F., Furthmueller, J., Bechstedt, F., Jefferson, P. H., . . . Munoz-Sanjose, V. (2008). <i>Ab</i>-<i>Initio</i> Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 53(5), 2811-2815. doi:10.3938/jkps.53.2811
Influence of growth conditions and polarity on interface-related electron density in InN
King, P. D. C., Veal, T. D., Gallinat, C. S., Koblmueller, G., Bailey, L. R., Speck, J. S., & McConville, C. F. (2008). Influence of growth conditions and polarity on interface-related electron density in InN. JOURNAL OF APPLIED PHYSICS, 104(10). doi:10.1063/1.3020528
Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy
Piper, L. F. J., Colakerol, L., King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, P. -A., . . . Smith, K. E. (2008). Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. PHYSICAL REVIEW B, 78(16). doi:10.1103/PhysRevB.78.165127
Surface electronic properties of clean and S-terminated InSb(001) and (111)B
King, P. D. C., Veal, T. D., Lowe, M. J., & McConville, C. F. (2008). Surface electronic properties of clean and S-terminated InSb(001) and (111)B. JOURNAL OF APPLIED PHYSICS, 104(8). doi:10.1063/1.3000567
Surface electron accumulation and the charge neutrality level in In<sub>2</sub>O<sub>3</sub>
King, P. D. C., Veal, T. D., Payne, D. J., Bourlange, A., Egdell, R. G., & McConville, C. F. (2008). Surface electron accumulation and the charge neutrality level in In<sub>2</sub>O<sub>3</sub>. PHYSICAL REVIEW LETTERS, 101(11). doi:10.1103/PhysRevLett.101.116808
InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
King, P. D. C., Veal, T. D., Kendrick, C. E., Bailey, L. R., Durbin, S. M., & McConville, C. F. (2008). InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements. PHYSICAL REVIEW B, 78(3). doi:10.1103/PhysRevB.78.033308
Surface electronic properties of n- and p-type InGaN alloys
King, P. D. C., Veal, T. D., Lu, H., Jefferson, P. H., Hatfield, S. A., Schaff, W. J., & McConville, C. F. (2008). Surface electronic properties of n- and p-type InGaN alloys. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245(5), 881-883. doi:10.1002/pssb.200778452
Surface electronic properties of undoped InAlN alloys
King, P. D. C., Veal, T. D., Adikimenakis, A., Lu, H., Bailey, L. R., Iliopoulos, E., . . . McConville, C. F. (2008). Surface electronic properties of undoped InAlN alloys. APPLIED PHYSICS LETTERS, 92(17). doi:10.1063/1.2913765
Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
King, P. D. C., Veal, T. D., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, F., . . . Schaff, W. J. (2008). Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations. PHYSICAL REVIEW B, 77(11). doi:10.1103/PhysRevB.77.115213
Response to "Comment on 'Bandgap and effective mass determination of epitaxial cadmium oxide'" [Appl. Phys. Lett. 92, 106103 (2008)]
Veal, T. D., Jefferson, P. H., King, P. D. C., Hatfield, S. A., McConville, C. F., Zuniga-Perez, J., & Munoz-Sanjose, V. (2008). Response to "Comment on 'Bandgap and effective mass determination of epitaxial cadmium oxide'" [Appl. Phys. Lett. 92, 106103 (2008)]. APPLIED PHYSICS LETTERS, 92(10). doi:10.1063/1.2896605
Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces
King, P. D. C., Veal, T. D., & McConville, C. F. (2008). Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces. PHYSICAL REVIEW B, 77(12). doi:10.1103/PhysRevB.77.125305
The influence of conduction band plasmons on core-level photoemission spectra of InN
King, P. D. C., Veal, T. D., Lu, H., Hatfield, S. A., Schaff, W. J., & McConville, C. F. (2008). The influence of conduction band plasmons on core-level photoemission spectra of InN. SURFACE SCIENCE, 602(4), 871-875. doi:10.1016/j.susc.2007.12.026
Determination of the branch-point energy of InN:: Chemical trends in common-cation and common-anion semiconductors
King, P. D. C., Veal, T. D., Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F., . . . Schaff, W. J. (2008). Determination of the branch-point energy of InN:: Chemical trends in common-cation and common-anion semiconductors. PHYSICAL REVIEW B, 77(4). doi:10.1103/PhysRevB.77.045316
Bandgap and effective mass of epitaxial cadmium oxide
Jefferson, P. H., Hatfield, S. A., Veal, T. D., King, P. D. C., McConville, C. F., Zuniga-Perez, J., & Munoz-Sanjose, V. (2008). Bandgap and effective mass of epitaxial cadmium oxide. APPLIED PHYSICS LETTERS, 92(2). doi:10.1063/1.2833269
Ab-initio studies of electronic and spectroscopic properties of MgO, ZnO and CdO
Schleife, A., Rödl, C., Fuchs, F., Furthmüller, J., Bechstedt, F., Jefferson, P. H., . . . Muñoz-Sanjosé, V. (2008). Ab-initio studies of electronic and spectroscopic properties of MgO, ZnO and CdO. In Journal of the Korean Physical Society Vol. 53 (pp. 2811-2815). doi:10.3938/jkps.53.2811
Growth and characterisation of dilute antimonide nitride materials for long wavelength applications
Coomber, S. D., Buckle, L., Jefferson, P. H., Walker, D., Veal, T. D., McConville, C. F., & Ashley, T. (2008). Growth and characterisation of dilute antimonide nitride materials for long wavelength applications. In NARROW GAP SEMICONDUCTORS 2007 Vol. 119 (pp. 49-+). Retrieved from https://www.webofscience.com/
2007
In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies
Veal, T. D., King, P. D. C., Walker, M., McConville, C. F., Lu, H., & Schaff, W. J. (2007). In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies. PHYSICA B-CONDENSED MATTER, 401, 351-354. doi:10.1016/j.physb.2007.08.185
X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset
King, P. D. C., Veal, T. D., Hatfield, S. A., Jefferson, P. H., McConville, C. F., Kendrick, C. E., . . . Durbin, S. M. (2007). X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. APPLIED PHYSICS LETTERS, 91(11). doi:10.1063/1.2783214
Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity
Merrick, M., Cripps, S. A., Murdin, B. N., Hosea, T. J. C., Veal, T. D., McConville, C. F., & Hopkinson, M. (2007). Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity. PHYSICAL REVIEW B, 76(7). doi:10.1103/PhysRevB.76.075209
Universality of electron accumulation at wurtzite <i>c</i>- and <i>a</i>-plane and zinc-blende InN surfaces
King, P. D. C., Veal, T. D., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, F., . . . Schaff, W. J. (2007). Universality of electron accumulation at wurtzite <i>c</i>- and <i>a</i>-plane and zinc-blende InN surfaces. APPLIED PHYSICS LETTERS, 91(9). doi:10.1063/1.2775807
In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy
Veal, T. D., King, P. D. C., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Lu, H., . . . Nanishi, Y. (2007). In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy. PHYSICAL REVIEW B, 76(7). doi:10.1103/PhysRevB.76.075313
X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)
Piper, L. F. J., Jefferson, P. H., Veal, T. D., McConville, C. F., Zuniga-Perez, J., & Munoz-Sanjose, V. (2007). X-ray photoemission studies of the electronic structure of single-crystalline CdO(100). SUPERLATTICES AND MICROSTRUCTURES, 42(1-6), 197-200. doi:10.1016/j.spmi.2007.04.029
Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
Jefferson, P. H., Buckle, L., Bennett, B. R., Veal, T. D., Walker, D., Wilson, N. R., . . . McConville, C. F. (2007). Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb. JOURNAL OF CRYSTAL GROWTH, 304(2), 338-341. doi:10.1016/j.jcrysgro.2007.02.033
Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Wang, T., Parbrook, P. J., . . . Schaff, W. J. (2007). Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy. APPLIED PHYSICS LETTERS, 90(13). doi:10.1063/1.2716994
Variation of band bending at the surface of Mg-doped InGaN:: Evidence of <i>p</i>-type conductivity across the composition range
King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Lu, H., & Schaff, W. J. (2007). Variation of band bending at the surface of Mg-doped InGaN:: Evidence of <i>p</i>-type conductivity across the composition range. PHYSICAL REVIEW B, 75(11). doi:10.1103/PhysRevB.75.115312
Doping-dependence of subband energies in quantized electron accumulation at InN surfaces
Veal, T. D., Piper, L. F. J., Phillips, M. R., Zareie, M. H., Lu, H., Schaff, W. J., & McConville, C. F. (2007). Doping-dependence of subband energies in quantized electron accumulation at InN surfaces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 204(2), 536-542. doi:10.1002/pssa.200673226
Growth and characterisation of high quality MBE grown InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>
Jefferson, P. H., Buckle, L., Walker, D., Veal, T. D., Coomber, S., Thomas, P. A., . . . McConville, C. F. (2007). Growth and characterisation of high quality MBE grown InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 1(3), 104-106. doi:10.1002/pssr.200701035
Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO
Allen, M. W., von Wenckstern, H., Grundmann, M., Hatfield, S., Jefferson, P., King, P., . . . Durbin, S. (2007). Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO. MRS Proceedings, 1035. doi:10.1557/proc-1035-l10-06
2006
Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy
Colakerol, L., Veal, T. D., Jeong, H. -K., Plucinski, L., DeMasi, A., Learmonth, T., . . . Smith, K. E. (2006). Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy. PHYSICAL REVIEW LETTERS, 97(23). doi:10.1103/PhysRevLett.97.237601
Transition from electron accumulation to depletion at InGaN surfaces
Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976
Band anticrossing in GaN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>
Jefferson, P. H., Veal, T. D., Piper, L. F. J., Bennett, B. R., McConville, C. F., Murdin, B. N., . . . Ashley, T. (2006). Band anticrossing in GaN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>. APPLIED PHYSICS LETTERS, 89(11). doi:10.1063/1.2349832
InN: Fermi level stabilization by low-energy ion bombardment
Piper, L. F. J., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2006). InN: Fermi level stabilization by low-energy ion bombardment. In PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Vol. 3 (pp. 1841-1845). doi:10.1002/pssc.200565104
Origin of the <i>n</i>-type conductivity of InN:: The role of positively charged dislocations
Piper, L. F. J., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2006). Origin of the <i>n</i>-type conductivity of InN:: The role of positively charged dislocations. APPLIED PHYSICS LETTERS, 88(25). doi:10.1063/1.2214156
Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states
Piper, L. F. J., Veal, T. D., Lowe, M. J., & McConville, C. F. (2006). Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states. PHYSICAL REVIEW B, 73(19). doi:10.1103/PhysRevB.73.195321
Dilute antimonide nitrides for very long wavelength infrared applications
Ashley, T., Buckle, L., Smith, G. W., Murdin, B. N., Jefferson, P. H., Piper, L. F. J., . . . McConville, C. F. (2006). Dilute antimonide nitrides for very long wavelength infrared applications. In INFRARED TECHNOLOGY AND APPLICATIONS XXXII, PTS 1AND 2 Vol. 6206. doi:10.1117/12.667232
Dielectric function of degenerate InSb: Beyond the hydrodynamic model
Bell, G. R., Veal, T. D., Frost, J. A., & McConville, C. F. (2006). Dielectric function of degenerate InSb: Beyond the hydrodynamic model. PHYSICAL REVIEW B, 73(15). doi:10.1103/PhysRevB.73.153302
Inversion and accumulation layers at InN surfaces
Veal, T. D., Piper, L. F. J., Schaff, W. J., & McConville, C. F. (2006). Inversion and accumulation layers at InN surfaces. JOURNAL OF CRYSTAL GROWTH, 288(2), 268-272. doi:10.1016/j.jcrysgro.2005.12.100
Scanning tunnelling spectroscopy of quantized electron accumulation at In<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N surfaces
Veal, T. D., Piper, L. F. J., Phillips, M. R., Zareie, M. H., Lu, H., Schaff, W. J., & McConville, C. F. (2006). Scanning tunnelling spectroscopy of quantized electron accumulation at In<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N surfaces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203(1), 85-92. doi:10.1002/pssa.200563522
2005
Valence-band structure of InN from x-ray photoemission spectroscopy -: art. no. 245319
Piper, L. F. J., Veal, T. D., Jefferson, P. H., McConville, C. F., Fuchs, F., Furthmüller, J., . . . Schaff, W. J. (2005). Valence-band structure of InN from x-ray photoemission spectroscopy -: art. no. 245319. PHYSICAL REVIEW B, 72(24). doi:10.1103/PhysRevB.72.245319
Electron accumulation at InN/AlN and InN/GaN interfaces
Veal, T. D., Piper, L. F. J., Mahboob, I., Lu, H., Schaff, W. J., & McConville, C. F. (2005). Electron accumulation at InN/AlN and InN/GaN interfaces. In PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 Vol. 2 (pp. 2246-2249). doi:10.1002/pssc.200461418
InN{0001} polarity by ion scattering spectroscopy
Walker, M., Veal, T. D., Lu, H., Schaff, W. J., & McConville, C. F. (2005). InN{0001} polarity by ion scattering spectroscopy. In Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 Vol. 2 (pp. 2301-2304). doi:10.1002/pssc.200461290
Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
Veal, T. D., Piper, L. F. J., Jefferson, P. H., Mahboob, I., McConville, C. F., Merrick, M., . . . Hopkinson, M. (2005). Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. APPLIED PHYSICS LETTERS, 87(18). doi:10.1063/1.2126117
Band gap reduction in GaNSb alloys due to the anion mismatch
Veal, T. D., Piper, L. F. J., Jollands, S., Bennett, B. R., Jefferson, P. H., Thomas, P. A., . . . Ashley, T. (2005). Band gap reduction in GaNSb alloys due to the anion mismatch. APPLIED PHYSICS LETTERS, 87(13). doi:10.1063/1.2058224
Clean wurtzite InN surfaces prepared with atomic hydrogen
Piper, L. F. J., Veal, T. D., Walker, M., Mahboob, I., McConville, C. F., Lu, H., & Schaff, W. J. (2005). Clean wurtzite InN surfaces prepared with atomic hydrogen. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(4), 617-620. doi:10.1116/1.1927108
Photoelectron spectroscopy study of Ga<sub>1-<i>x</i></sub>Mn<i><sub>x</sub></i>As(001) surface oxide and low temperature cleaning
Hatfield, S. A., Veal, T. D., McConville, C. F., Bell, G. R., Edmonds, K. W., Campion, R. P., . . . Gallagher, B. L. (2005). Photoelectron spectroscopy study of Ga<sub>1-<i>x</i></sub>Mn<i><sub>x</sub></i>As(001) surface oxide and low temperature cleaning. SURFACE SCIENCE, 585(1-2), 66-74. doi:10.1016/j.susc.2005.04.012
Growth of dilute GaNSb by plasma-assisted MBE
Buckle, L., Bennett, B. R., Jollands, S., Veal, T. D., Wilson, N. R., Murdin, B. N., . . . Ashley, T. (2005). Growth of dilute GaNSb by plasma-assisted MBE. JOURNAL OF CRYSTAL GROWTH, 278(1-4), 188-192. doi:10.1016/j.jcrysgro.2004.12.148
2004
Low-energy nitrogen ion implantation of InSb
Mahboob, I., Veal, T. D., & McConville, C. F. (2004). Low-energy nitrogen ion implantation of InSb. JOURNAL OF APPLIED PHYSICS, 96(9), 4935-4938. doi:10.1063/1.1792390
Core-level photoemission spectroscopy of nitrogen bonding in GaN<i><sub>x</sub></i>As<sub>1-<i>x</i></sub> alloys
Veal, T. D., Mahboob, I., Piper, L. F. J., McConville, C. F., & Hopkinson, M. (2004). Core-level photoemission spectroscopy of nitrogen bonding in GaN<i><sub>x</sub></i>As<sub>1-<i>x</i></sub> alloys. APPLIED PHYSICS LETTERS, 85(9), 1550-1552. doi:10.1063/1.1784886
Electron spectroscopy of dilute nitrides
Veal, T. D., Mahboob, I., Piper, L. F. J., Ashley, T., Hopkinson, M., & McConville, C. F. (2004). Electron spectroscopy of dilute nitrides. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3201-S3214. doi:10.1088/0953-8984/16/31/015
Indium nitride: Evidence of electron accumulation
Veal, T. D., Mahboob, I., Piper, L. F. J., McConville, C. F., Lu, H., & Schaff, W. J. (2004). Indium nitride: Evidence of electron accumulation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(4), 2175-2178. doi:10.1116/1.1771672
Fuchs-Kliewer phonon excitations in GaNAs alloys
Veal, T. D., Mahboob, I., Piper, L. F. J., McConville, C. F., & Hopkinson, M. (2004). Fuchs-Kliewer phonon excitations in GaNAs alloys. JOURNAL OF APPLIED PHYSICS, 95(12), 8466-8468. doi:10.1063/1.1737058
Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307
Mahboob, I., Veal, T. D., Piper, L. F. J., McConville, C. F., Lu, H., Schaff, W. J., . . . Bechstedt, F. (2004). Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307. PHYSICAL REVIEW B, 69(20). doi:10.1103/PhysRevB.69.201307
Negative band gaps in dilute InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys -: art. no. 136801
Veal, T. D., Mahboob, I., & McConville, C. F. (2004). Negative band gaps in dilute InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys -: art. no. 136801. PHYSICAL REVIEW LETTERS, 92(13). doi:10.1103/PhysRevLett.92.136801
Intrinsic electron accumulation at clean InN surfaces
Mahboob, I., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2004). Intrinsic electron accumulation at clean InN surfaces. PHYSICAL REVIEW LETTERS, 92(3). doi:10.1103/PhysRevLett.92.036804
Temperature invariance of InN electron accumulation
Piper, L. F. J., Veal, T. D., Mahboob, I., McConville, C. F., Lu, H., & Schaff, W. J. (2004). Temperature invariance of InN electron accumulation. PHYSICAL REVIEW B, 70(11). doi:10.1103/PhysRevB.70.115333
2003
Sulphur-induced electron accumulation on InAs: a comparison of the (001) and (111)B surfaces
Lowe, M. J., Veal, T. D., Mowbray, A. P., & McConville, C. F. (2003). Sulphur-induced electron accumulation on InAs: a comparison of the (001) and (111)B surfaces. SURFACE SCIENCE, 544(2-3), 320-328. doi:10.1016/j.susc.2003.08.047
Electron dynamics in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>
Mahboob, I., Veal, T. D., & McConville, C. F. (2003). Electron dynamics in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub>. APPLIED PHYSICS LETTERS, 83(11), 2169-2171. doi:10.1063/1.1611270
Effect of hydrogen in dilute InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys grown by molecular beam epitaxy
Veal, T. D., Mahboob, I., McConville, C. F., Burke, T. M., & Ashley, T. (2003). Effect of hydrogen in dilute InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys grown by molecular beam epitaxy. APPLIED PHYSICS LETTERS, 83(9), 1776-1778. doi:10.1063/1.1604463
Determination of the substitutional nitrogen content and the electron effective mass in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> (001) epitaxial layers
Mahboob, I., Veal, T. D., & McConville, C. F. (2003). Determination of the substitutional nitrogen content and the electron effective mass in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> (001) epitaxial layers. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 102-104. doi:10.1049/ip-opt:20030045
Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces
Lowe, M. J., Veal, T. D., McConville, C. F., Bell, G. R., Tsukamoto, S., & Koguchi, N. (2003). Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces. SURFACE SCIENCE, 523(1-2), 179-188. doi:10.1016/S0039-6028(02)02416-0
2002
Plasmon damping in molecular beam epitaxial-grown InAs(100)
Veal, T. D., Bell, G. R., & McConville, C. F. (2002). Plasmon damping in molecular beam epitaxial-grown InAs(100). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20(4), 1766-1770. doi:10.1116/1.1491541
Surface Preparation of InAs (110) Using Atomic Hydrogen
Veal, T. D., McConville, C. F., & Al-Harthi, S. H. (n.d.). Surface Preparation of InAs (110) Using Atomic Hydrogen. Sultan Qaboos University Journal for Science [SQUJS], 7(2), 303. doi:10.24200/squjs.vol7iss2pp303-310
HREELS and photoemission study of GaSb(100)-(1 x 3) surfaces prepared by optimal atomic hydrogen cleaning
Veal, T. D., Lowe, M. J., & McConville, C. F. (2002). HREELS and photoemission study of GaSb(100)-(1 x 3) surfaces prepared by optimal atomic hydrogen cleaning. SURFACE SCIENCE, 499(2-3), 251-260. doi:10.1016/S0039-6028(01)01856-8
Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivation
Lowe, M. J., Veal, T. D., McConville, C. F., Bell, G. R., Tsukamoto, S., & Koguchi, N. (2002). Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivation. JOURNAL OF CRYSTAL GROWTH, 237, 196-200. doi:10.1016/S0022-0248(01)01899-1
2001
Profiling of electron accumulation layers in the near-surface region of InAs (110)
Veal, T. D., & McConville, C. F. (2001). Profiling of electron accumulation layers in the near-surface region of InAs (110). PHYSICAL REVIEW B, 64(8). doi:10.1103/PhysRevB.64.085311
Profiling of electron accumulation layers in the near-surface region of InAs (110)
Veal, T. D., & McConville, C. F. (2001). Profiling of electron accumulation layers in the near-surface region of InAs (110). PHYSICAL REVIEW B, 6408(8), art. no.-085311.
2000
Temperature-dependent two-dimensional plasmons at clean and hydrogenated Ge(001) surfaces
Eggeling, J., Bell, G. R., Jones, T. S., Veal, T. D., & McConville, C. F. (2000). Temperature-dependent two-dimensional plasmons at clean and hydrogenated Ge(001) surfaces. PHYSICAL REVIEW B, 62(11), 7330-7335. doi:10.1103/PhysRevB.62.7330
Controlled oxide removal for the preparation of damage-free InAs(110) surfaces
Veal, T. D., & McConville, C. F. (2000). Controlled oxide removal for the preparation of damage-free InAs(110) surfaces. APPLIED PHYSICS LETTERS, 77(11), 1665-1667. doi:10.1063/1.1310211