Publications
Selected publications
- LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries (Journal article - 2022)
- ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory (Journal article - 2021)
- Directing the mechanism of CO<sub>2</sub> reduction by a Mn catalyst through surface immobilization (Journal article - 2018)
- Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies (Journal article - 2018)
- Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications (Journal article - 2017)
- The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver (Journal article - 2017)
- Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth (Journal article - 2017)
- Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses (Journal article - 2015)
- Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine (Journal article - 2011)
- Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques (Journal article - 2005)
2022
LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries
Lee, H. J., Liu, X., Chart, Y., Tang, P., Bae, J. -G., Narayanan, S., . . . Pasta, M. (2022). LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries. NANO LETTERS. doi:10.1021/acs.nanolett.2c02426
LiNi0.5Mn1.5O4 cathode microstructure for all-solid-state batteries
Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating
Alqahtani, A., Potter, R., Edwardson, S., Marengo, M., & Bertola, V. (2022). Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating. In 39th UIT National Heat Transfer Conference. Gaeta (Italy).
2021
Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory
Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory. In 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM). doi:10.1109/EDTM50988.2021.9420825
ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory
Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R., & Hayne, M. (2021). ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 1-4. doi:10.1109/ted.2021.3064788
2020
Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm
Li, Q., Perrie, W., Potter, R., Allegre, O., Li, Z., Tang, Y., . . . Dearden, G. (2020). Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm. Journal of Physics D: Applied Physics, 53(36), 365301. doi:10.1088/1361-6463/ab8ed8
(Invited) Band Line-up of High-k Oxides on GaN
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Meeting Abstracts, MA2020-01(15), 1043. doi:10.1149/ma2020-01151043mtgabs
(Invited) Band Line-up of High-k Oxides on GaN
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecst
Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN
Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4
2019
Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu<sub>3</sub>BiS<sub>3</sub> for Photovoltaics
Whittles, T. J., Veal, T. D., Savory, C. N., Yates, P. J., Murgatroyd, P. A. E., Gibbon, J. T., . . . Dhanak, V. R. (2019). Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu<sub>3</sub>BiS<sub>3</sub> for Photovoltaics. ACS APPLIED MATERIALS & INTERFACES, 11(30), 27033-27047. doi:10.1021/acsami.9b04268
Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220
2018
Directing the mechanism of CO<sub>2</sub> reduction by a Mn catalyst through surface immobilization
Walsh, J. J., Forster, M., Smith, C. L., Neri, G., Potter, R. J., & Cowan, A. J. (2018). Directing the mechanism of CO<sub>2</sub> reduction by a Mn catalyst through surface immobilization. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 20(10), 6811-6816. doi:10.1039/c7cp08537k
Elucidation of ALD MgZnO deposition processes using low energy ion scattering
Werner, M., Roberts, J. W., Potter, R. J., Dawson, K., & Chalker, P. R. (2018). Elucidation of ALD MgZnO deposition processes using low energy ion scattering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(2). doi:10.1116/1.5015958
Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies
Forster, M., Potter, R. J., Yang, Y., Li, Y., & Cowan, A. J. (2018). Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies. ChemPhotoChem, 2(3), 183-189. doi:10.1002/cptc.201700156
2017
Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications
Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208
Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111(9). doi:10.1063/1.4991879
Biotransformation of Silver Released from Nanoparticle Coated Titanium Implants Revealed in Regenerating Bone
Geng, H., Poologasundarampillai, G., Todd, N., Devlin-Mullin, A., Moore, K. L., Golrokhi, Z., . . . others. (2017). Biotransformation of Silver Released from Nanoparticle Coated Titanium Implants Revealed in Regenerating Bone. ACS applied materials & interfaces, 9(25), 21169-21180. doi:10.1021/acsami.7b05150
The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver
Golrokhi, Z., Marshall, P. A., Romani, S., Rushworth, S., Chalker, P. R., & Potter, R. J. (2017). The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399, 123-131. doi:10.1016/j.apsusc.2016.11.192
Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth
Devlin-Mullin, A., Todd, N. M., Golrokhi, Z., Geng, H., Konerding, M. A., Ternan, N. G., . . . Mitchell, C. A. (2017). Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth. Advanced Healthcare Materials, 6(11). doi:10.1002/adhm.201700033
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902-1-102902-4. doi:10.1063/1.4978033
2016
Wider Memory Window in Ta2O5 RRAM by Doping
Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.
High volume fabrication of laser targets using MEMS techniques
Spindloe, C., Arthur, G., Hall, F., Tomlinson, S., Potter, R., Kar, S., . . . Tolley, M. K. (2016). High volume fabrication of laser targets using MEMS techniques. In 5TH TARGET FABRICATION WORKSHOP Vol. 713. doi:10.1088/1742-6596/713/1/012002
Self-limiting atomic layer deposition of conformal nanostructured silver films
Golrokhi, Z., Chalker, S., Sutcliffe, C. J., & Potter, R. J. (2016). Self-limiting atomic layer deposition of conformal nanostructured silver films. Applied Surface Science, 364, 789-797. doi:10.1016/j.apsusc.2015.12.127
Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors
Partida-Manzanera, T., Roberts, J. W., Bhat, T. N., Zhang, Z., Tan, H. R., Dolmanan, S. B., . . . Potter, R. J. (2016). Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 119(2). doi:10.1063/1.4939298
2015
The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition
Herodotou, S., Treharne, R. E., Durose, K., Tatlock, G. J., & Potter, R. J. (2015). The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition. Materials, 8(10), 7230-7240. doi:10.3390/ma8105369
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecst
Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy
Althobaiti, M. G., Stoner, J., Dhanak, V. R., Potter, R. J., & Mitrovic, I. Z. (2015). Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 161-163). Retrieved from https://www.webofscience.com/
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993
Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses
Forster, M., Potter, R., Ling, Y., Yang, Y., Klug, D., Li, Y., & Cowan, A. (2015). Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses. Chemical Science, 6(7), 4009-4016. doi:10.1039/C5SC00423C
Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics
Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., & Potter, R. J. (2015). Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5(1). doi:10.1063/1.4905887
2014
Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases
Jin, J. D., Luo, Y., Bao, P., Brox-Nilsen, C., Potter, R., & Song, A. M. (2014). Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases. THIN SOLID FILMS, 552, 192-195. doi:10.1016/j.tsf.2013.12.004
2012
Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation
Semaltianos, N. G., Perrie, W., Romani, S., Potter, R. J., Dearden, G., & Watkins, K. G. (2012). Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation. COLLOID AND POLYMER SCIENCE, 290(3), 213-220. doi:10.1007/s00396-011-2533-6
Gadolinium nitride films deposited using a PEALD based process
Fang, Z., Williams, P. A., Odedra, R., Jeon, H., & Potter, R. J. (2012). Gadolinium nitride films deposited using a PEALD based process. JOURNAL OF CRYSTAL GROWTH, 338(1), 111-117. doi:10.1016/j.jcrysgro.2011.10.049
Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald
Fang, Q., Hodson, C., Liu, M., Fang, Z. W., Potter, R., & Gunn, R. (2012). Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald. In Physics Procedia Vol. 32 (pp. 379-388). Elsevier BV. doi:10.1016/j.phpro.2012.03.572
2011
Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine
Fang, Z., Aspinall, H. C., Odedra, R., & Potter, R. J. (2011). Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine. JOURNAL OF CRYSTAL GROWTH, 331(1), 33-39. doi:10.1016/j.jcrysgro.2011.07.012
Picosecond laser patterning of PEDOT:PSS thin films
Semaltianos, N. G., Koidis, C., Pitsalidis, C., Karagiannidis, P., Logothetidis, S., Perrie, W., . . . Watkins, K. G. (2011). Picosecond laser patterning of PEDOT:PSS thin films. SYNTHETIC METALS, 161(5-6), 431-439. doi:10.1016/j.synthmet.2010.12.022
2010
Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation
Semaltianos, N. G., Logothetidis, S., Hastas, N., Perrie, W., Romani, S., Potter, R. J., . . . Sharp, M. (2010). Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation. CHEMICAL PHYSICS LETTERS, 484(4-6), 283-289. doi:10.1016/j.cplett.2009.11.054
Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment
Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Edwardson, S. P., . . . Watkins, K. G. (2010). Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment. JOURNAL OF NANOPARTICLE RESEARCH, 12(2), 573-580. doi:10.1007/s11051-009-9625-y
2009
High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure
Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure. In 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Vol. 48 (pp. 628-630). IEEE. doi:10.1109/ipfa.2009.5232565
CdTe nanoparticles synthesized by laser ablation
Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2009). CdTe nanoparticles synthesized by laser ablation. APPLIED PHYSICS LETTERS, 95(3). doi:10.1063/1.3171941
High-<i>k</i> materials and their response to gamma ray radiation
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-<i>k</i> materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848
II-VI semiconductor nanoparticles synthesized by laser ablation
Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2009). II-VI semiconductor nanoparticles synthesized by laser ablation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 94(3), 641-647. doi:10.1007/s00339-008-4854-y
2008
CdSe nanoparticles synthesized by laser ablation
Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2008). CdSe nanoparticles synthesized by laser ablation. EPL, 84(4). doi:10.1209/0295-5075/84/47001
Permittivity enhancement of hafnium dioxide high-κ films by cerium doping
Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-κ films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059
'High-k Materials and Their Response to Gamma Ray Radiation',
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.
Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology
Mazzucato, S., & Potter, R. J. (2008). Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology (Vol. 105). A. Erol (Ed.), Berlin Heidelberg New York: Springer.
The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides
Mazzucato, S., & Potter, R. J. (n.d.). The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides. In Materials Science (pp. 181-197). Springer Berlin Heidelberg. doi:10.1007/978-3-540-74529-7_7
2007
Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors
Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556
Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures
Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025
Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition
Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052
Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition
Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035
Optimising Precursor Delivery
Potter, R. J. (2007). Optimising Precursor Delivery. SAFC Hitech. Retrieved from http://www.sigmaaldrich.com/SAFC/Hitech/Overview/Newsletters.html
2006
Spectroellipsometric assessment of HfO<sub>2</sub> thin films
Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301
MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors. ChemInform, 37(21). doi:10.1002/chin.200621220
MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537
'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.
'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'
Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.
, Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD
Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2006). , Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD. Thin Solid Films.
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD)
Taechakumput, P., Taylor, S., Buiu, O., Ram, D. L., Potter, R. J., Chalker, P. R., & Jones, A. C. (2006). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD). In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 176-177). Santa Tecla - Catania: CNR - Italy.
2005
A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD
Potter, R. J., Awad, A., Chalker, P. R., Peng, W., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD. In Materials Research Society Symposium Proceedings Vol. 902 (pp. 1-6).
Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384
Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389a
Recent developments in the MOCVD and ALD of rare earth oxides and silicates
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081
Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004)
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2005). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004). JOURNAL OF CRYSTAL GROWTH, 276(1-2), 333. doi:10.1016/j.jcrysgro.2005.01.093
Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques
Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.200406348
A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD
Potter, R., Awad, A., Chalker, P. R., Wang, P., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD. MRS Proceedings, 902. doi:10.1557/proc-0902-t02-02
2004
Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109
Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor
Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310
Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor
Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313
Some recent developments in the MOCVD and ALD of high-κ dielectric oxides
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2004). Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525j
Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD
Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6
Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift
Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935
Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors
Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301
Optical properties of GaNAs and GaInAsN quantum wells
Potter, R. J., & Balkan, N. (2004). Optical properties of GaNAs and GaInAsN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3387-S3412. doi:10.1088/0953-8984/16/31/026
Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition
Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424
Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides
Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h
2003
Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission
Potter, R. J., Balkan, N., Carrère, H., Arnoult, A., Bedel, E., & Marie, X. (2003). Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission. APPLIED PHYSICS LETTERS, 82(20), 3400-3402. doi:10.1063/1.1576511
Band structure and optical gain in GaInAsN quantum wells
Carrère, H., Arnoult, A., Marie, X., Amand, T., Bedel-Pereira, E., Potter, R. J., & Balkan, N. (2003). Band structure and optical gain in GaInAsN quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 245-246. doi:10.1016/S1386-9477(02)00784-1
Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement
Potter, R. J., Alexandropoulos, D., Erol, A., Mazzucato, S., Balkan, N., Adams, M. J., . . . Fontaine, C. (2003). Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 240-241. doi:10.1016/S1386-9477(02)00782-8
Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors
Sceats, R., Dyson, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., Balkan, N., . . . Pinches, S. (2003). Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 607-609. doi:10.1016/S1386-9477(02)00884-6
Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells
Mazzucato, S., Erol, A., Teke, A., Arikan, M. C., Potter, R. J., Balkan, N., . . . Arnoult, A. (2003). Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 250-251. doi:10.1016/S1386-9477(02)00786-5
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X
The operation of a wavelength converter based on a field effect light emitting and absorbing heterojunction
Wah, J. Y., Balkan, N., Potter, R. J., & Roberts, J. S. (2003). The operation of a wavelength converter based on a field effect light emitting and absorbing heterojunction. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 196(2), 496-503. doi:10.1002/pssa.200305952
In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
Mazzucato, S., Balkan, N., Teke, A., Erol, A., Potter, R. J., Arikan, M. C., . . . Lacoste, G. (2003). In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells. JOURNAL OF APPLIED PHYSICS, 93(5), 2440-2448. doi:10.1063/1.1541104
Optical properties of GaInNAs/GaAs quantum wells
Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5
Bi-directional field effect light emitting and absorbing heterojunction with Ga<sub>0.8</sub>In<sub>0.2</sub>N<sub>0.015</sub>As<sub>0.985</sub> at 1250 nm
Wah, J. Y., Loubet, N., Potter, R. J., Mazzucato, S., Arnoult, A., Carrère, H., . . . Balkan, N. (2003). Bi-directional field effect light emitting and absorbing heterojunction with Ga<sub>0.8</sub>In<sub>0.2</sub>N<sub>0.015</sub>As<sub>0.985</sub> at 1250 nm. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 150 (pp. 72-74). doi:10.1049/ip-opt:20030051
Time resolved PL study of GaInNAs quantum wells
Potter, R. J., Balkan, N., Marie, X., Senes, M., Carrère, H., Arnoult, A., & Fontaine, C. (2003). Time resolved PL study of GaInNAs quantum wells. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 150 (pp. 75-76). doi:10.1049/ip-opt:20030050
Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors
Potter, R. J., Marshall, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Vehkamäki, M., . . . Smith, L. M. (2004). Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 97-108). Retrieved from https://www.webofscience.com/
Optical processes in dilute nitrides
Potter, R. J. (2003). Optical processes in dilute nitrides. (PhD Thesis, The University of Essex).
2001
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4
Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs
Potter, R. J., Balkan, N., Marie, X., Carr�re, H., Bedel, E., & Lacoste, G. (2001). Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs. physica status solidi (a), 187(2), 623-632. doi:3.0.co;2-q">10.1002/1521-396x(200110)187:2<623::aid-pssa623>3.0.co;2-q
Interaction Strength between the Highly Localised Nitrogen States and tne Extended Semiconductor Matrix States in GaInNAs
Potter, R. J., Balkan, N., Marie, X., Carrère, H., Bedel, E., & Lacoste, G. (2001). Interaction Strength between the Highly Localised Nitrogen States and tne Extended Semiconductor Matrix States in GaInNAs. Physica Status Solidi (A) Applied Research, 187(2), 623-632. doi:3.0.CO;2-Q">10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.0.CO;2-Q
Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs
Potter, R. J., Balkan, N., Marie, X., Carrère, H., Bedel, E., & Lacoste, G. (2001). Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 187(2), 623-632. doi:3.3.CO;2-H">10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.3.CO;2-H
1.5 μm surface emission from GaInAsP/InP HELLISH structures
Sceats, R., Hepburn, C. J., Potter, R., Dyson, A., Balkan, N., & Adams, M. J. (2001). 1.5 μm surface emission from GaInAsP/InP HELLISH structures. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 723-732). doi:10.1117/12.432628
Optical characterization of GaInNAs
Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617
Hot electron light emission from a GaInAsP/InP structure
Sceats, R., Dyson, A., Potter, R., Boland-Thoms, A., Balkan, N., Adams, M. J., & Button, C. C. (2001). Hot electron light emission from a GaInAsP/InP structure. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 148 (pp. 60-64). doi:10.1049/ip-opt:20010131
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., . . . Adams, M. J. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. J. Crystal Growth Letts., 233(1-2), 1.
The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures
Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967
2000
Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403
VCSEL structure hot electron light emitter
Balkan, N., Serpengüzel, A., O'Brien-Davies, A., Sökmen, I., Hepburn, C., Potter, R., . . . Roberts, J. S. (2000). VCSEL structure hot electron light emitter. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74(1-3), 96-100. doi:10.1016/S0921-5107(99)00542-5
Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.
1999
Hot electron VCSEL
Balkan, N., Sokmen, I., O'Brien-Davies, A., Potter, R., Hepburn, C., Boland-Thoms, A., . . . Roberts, J. (1999). Hot electron VCSEL. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII Vol. 3625 (pp. 336-345). doi:10.1117/12.356892
1998
The operation of a novel hot electron Vertical Cavity Surface Emitting Laser
Balkan, N., O'Brien, A., Thoms, A. B., Potter, R., Poolton, N., Adams, M., . . . Roberts, J. (1998). The operation of a novel hot electron Vertical Cavity Surface Emitting Laser. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 Vol. 3283 (pp. 162-170). doi:10.1117/12.316680
A Hot Electron Surface Emitting Laser: HELLISH
O'Brien, A., Sceats, R., Potter, R., Poolton, N., Masum, J., Boland-Thoms, A., . . . Adams, M. (n.d.). A Hot Electron Surface Emitting Laser: HELLISH. In CLEO/Europe Conference on Lasers and Electro-Optics Vol. 70 (pp. 34). IEEE. doi:10.1109/cleoe.1998.718925
A Hot Electron Surface emitting Laser: HELLISH
O'Brien, A., Sceats, R., Potter, R., Poolton, N., Masum, J., Boland-Thoms, A., . . . Adams, M. (1998). A Hot Electron Surface emitting Laser: HELLISH. In Conference on Lasers and Electro-Optics-Europe Vol. 70 (pp. CMH9). Optica Publishing Group. doi:10.1364/cleo_europe.1998.cmh9