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Richard Potter

Dr Richard Potter
MPhys (hons), MInstP, PhD

Publications

Selected publications

  1. LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries (Journal article - 2022)
  2. ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory (Journal article - 2021)
  3. Directing the mechanism of CO<sub>2</sub> reduction by a Mn catalyst through surface immobilization (Journal article - 2018)
  4. Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies (Journal article - 2018)
  5. Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications (Journal article - 2017)
  6. The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver (Journal article - 2017)
  7. Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth (Journal article - 2017)
  8. Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses (Journal article - 2015)
  9. Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine (Journal article - 2011)
  10. Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques (Journal article - 2005)
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2022

Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating

Alqahtani, A., Potter, R., Edwardson, S., Marengo, M., & Bertola, V. (2022). Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating. In 39th UIT National Heat Transfer Conference. Gaeta (Italy).

Conference Paper

2021

Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory

Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory. In 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM). doi:10.1109/EDTM50988.2021.9420825

DOI
10.1109/EDTM50988.2021.9420825
Conference Paper

2020

(Invited) Band Line-up of High-k Oxides on GaN

Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Meeting Abstracts, MA2020-01(15), 1043. doi:10.1149/ma2020-01151043mtgabs

DOI
10.1149/ma2020-01151043mtgabs
Journal article

2019

Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220

DOI
10.1063/1.5049220
Journal article

2018

2017

Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications

Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208

DOI
10.1021/acsami.7b14208
Journal article

Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth

Devlin-Mullin, A., Todd, N. M., Golrokhi, Z., Geng, H., Konerding, M. A., Ternan, N. G., . . . Mitchell, C. A. (2017). Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth. Advanced Healthcare Materials, 6(11). doi:10.1002/adhm.201700033

DOI
10.1002/adhm.201700033
Journal article

2016

Wider Memory Window in Ta2O5 RRAM by Doping

Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.

Conference Paper

High volume fabrication of laser targets using MEMS techniques

Spindloe, C., Arthur, G., Hall, F., Tomlinson, S., Potter, R., Kar, S., . . . Tolley, M. K. (2016). High volume fabrication of laser targets using MEMS techniques. In 5TH TARGET FABRICATION WORKSHOP Vol. 713. doi:10.1088/1742-6596/713/1/012002

DOI
10.1088/1742-6596/713/1/012002
Conference Paper

Self-limiting atomic layer deposition of conformal nanostructured silver films

Golrokhi, Z., Chalker, S., Sutcliffe, C. J., & Potter, R. J. (2016). Self-limiting atomic layer deposition of conformal nanostructured silver films. Applied Surface Science, 364, 789-797. doi:10.1016/j.apsusc.2015.12.127

DOI
10.1016/j.apsusc.2015.12.127
Journal article

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors

Partida-Manzanera, T., Roberts, J. W., Bhat, T. N., Zhang, Z., Tan, H. R., Dolmanan, S. B., . . . Potter, R. J. (2016). Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 119(2). doi:10.1063/1.4939298

DOI
10.1063/1.4939298
Journal article

2015

Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy

Althobaiti, M. G., Stoner, J., Dhanak, V. R., Potter, R. J., & Mitrovic, I. Z. (2015). Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 161-163). Retrieved from https://www.webofscience.com/

Conference Paper

(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films

Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993

DOI
10.1149/ma2015-02/26/993
Journal article

Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses

Forster, M., Potter, R., Ling, Y., Yang, Y., Klug, D., Li, Y., & Cowan, A. (2015). Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses. Chemical Science, 6(7), 4009-4016. doi:10.1039/C5SC00423C

DOI
10.1039/C5SC00423C
Journal article

2014

Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases

Jin, J. D., Luo, Y., Bao, P., Brox-Nilsen, C., Potter, R., & Song, A. M. (2014). Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases. THIN SOLID FILMS, 552, 192-195. doi:10.1016/j.tsf.2013.12.004

DOI
10.1016/j.tsf.2013.12.004
Journal article

2012

Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation

Semaltianos, N. G., Perrie, W., Romani, S., Potter, R. J., Dearden, G., & Watkins, K. G. (2012). Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation. COLLOID AND POLYMER SCIENCE, 290(3), 213-220. doi:10.1007/s00396-011-2533-6

DOI
10.1007/s00396-011-2533-6
Journal article

Gadolinium nitride films deposited using a PEALD based process

Fang, Z., Williams, P. A., Odedra, R., Jeon, H., & Potter, R. J. (2012). Gadolinium nitride films deposited using a PEALD based process. JOURNAL OF CRYSTAL GROWTH, 338(1), 111-117. doi:10.1016/j.jcrysgro.2011.10.049

DOI
10.1016/j.jcrysgro.2011.10.049
Journal article

Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald

Fang, Q., Hodson, C., Liu, M., Fang, Z. W., Potter, R., & Gunn, R. (2012). Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald. In Physics Procedia Vol. 32 (pp. 379-388). Elsevier BV. doi:10.1016/j.phpro.2012.03.572

DOI
10.1016/j.phpro.2012.03.572
Conference Paper

2011

Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine

Fang, Z., Aspinall, H. C., Odedra, R., & Potter, R. J. (2011). Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine. JOURNAL OF CRYSTAL GROWTH, 331(1), 33-39. doi:10.1016/j.jcrysgro.2011.07.012

DOI
10.1016/j.jcrysgro.2011.07.012
Journal article

Picosecond laser patterning of PEDOT:PSS thin films

Semaltianos, N. G., Koidis, C., Pitsalidis, C., Karagiannidis, P., Logothetidis, S., Perrie, W., . . . Watkins, K. G. (2011). Picosecond laser patterning of PEDOT:PSS thin films. SYNTHETIC METALS, 161(5-6), 431-439. doi:10.1016/j.synthmet.2010.12.022

DOI
10.1016/j.synthmet.2010.12.022
Journal article

2010

Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation

Semaltianos, N. G., Logothetidis, S., Hastas, N., Perrie, W., Romani, S., Potter, R. J., . . . Sharp, M. (2010). Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation. CHEMICAL PHYSICS LETTERS, 484(4-6), 283-289. doi:10.1016/j.cplett.2009.11.054

DOI
10.1016/j.cplett.2009.11.054
Journal article

Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Edwardson, S. P., . . . Watkins, K. G. (2010). Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment. JOURNAL OF NANOPARTICLE RESEARCH, 12(2), 573-580. doi:10.1007/s11051-009-9625-y

DOI
10.1007/s11051-009-9625-y
Journal article

2009

High-k dielectrics' radiation response to X-ray and &amp;#x03B3;-ray exposure

Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and &amp;#x03B3;-ray exposure. In 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 628-630). IEEE. doi:10.1109/ipfa.2009.5232565

DOI
10.1109/ipfa.2009.5232565
Conference Paper

CdTe nanoparticles synthesized by laser ablation

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2009). CdTe nanoparticles synthesized by laser ablation. APPLIED PHYSICS LETTERS, 95(3). doi:10.1063/1.3171941

DOI
10.1063/1.3171941
Journal article

High-<i>k</i> materials and their response to gamma ray radiation

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-<i>k</i> materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848

DOI
10.1116/1.3071848
Journal article

II-VI semiconductor nanoparticles synthesized by laser ablation

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2009). II-VI semiconductor nanoparticles synthesized by laser ablation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 94(3), 641-647. doi:10.1007/s00339-008-4854-y

DOI
10.1007/s00339-008-4854-y
Journal article

2008

CdSe nanoparticles synthesized by laser ablation

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2008). CdSe nanoparticles synthesized by laser ablation. EPL, 84(4). doi:10.1209/0295-5075/84/47001

DOI
10.1209/0295-5075/84/47001
Journal article

Permittivity enhancement of hafnium dioxide high-κ films by cerium doping

Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-κ films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059

DOI
10.1063/1.3023059
Journal article

'High-k Materials and Their Response to Gamma Ray Radiation',

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.

Conference Paper

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology

Mazzucato, S., & Potter, R. J. (2008). Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology (Vol. 105). A. Erol (Ed.), Berlin Heidelberg New York: Springer.

Book

The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides

Mazzucato, S., & Potter, R. J. (n.d.). The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides. In Materials Science (pp. 181-197). Springer Berlin Heidelberg. doi:10.1007/978-3-540-74529-7_7

DOI
10.1007/978-3-540-74529-7_7
Chapter

2007

Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors

Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556

DOI
10.1021/cm0707556
Journal article

Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures

Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025

DOI
10.1016/j.microrel.2007.01.025
Journal article

Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures

Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074

DOI
10.1016/j.microrel.2007.01.074
Journal article

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition

Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049

DOI
10.1016/j.microrel.2007.01.049
Journal article

Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition

Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052

DOI
10.1016/j.microrel.2007.01.052
Journal article

Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition

Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035

DOI
10.1016/j.tsf.2006.09.035
Journal article

Optimising Precursor Delivery

Potter, R. J. (2007). Optimising Precursor Delivery. SAFC Hitech. Retrieved from http://www.sigmaaldrich.com/SAFC/Hitech/Overview/Newsletters.html

Internet publication

2006

Spectroellipsometric assessment of HfO<sub>2</sub> thin films

Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215

DOI
10.1016/j.tsf.2005.12.215
Journal article

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301

DOI
10.1149/1.2209301
Journal article

MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors. ChemInform, 37(21). doi:10.1002/chin.200621220

DOI
10.1002/chin.200621220
Journal article

MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023

DOI
10.1002/cvde.200500023
Journal article

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537

DOI
10.1149/ma2005-02/13/537
Journal article

'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'

Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.

Conference Paper

'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'

Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.

Conference Paper

, Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD

Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2006). , Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD. Thin Solid Films.

Journal article

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD)

Taechakumput, P., Taylor, S., Buiu, O., Ram, D. L., Potter, R. J., Chalker, P. R., & Jones, A. C. (2006). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD). In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 176-177). Santa Tecla - Catania: CNR - Italy.

Conference Paper

2005

A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD

Potter, R. J., Awad, A., Chalker, P. R., Peng, W., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD. In Materials Research Society Symposium Proceedings Vol. 902 (pp. 1-6).

Conference Paper

Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]

Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384

DOI
10.1002/cvde.200506384
Journal article

Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors

Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389a

DOI
10.1039/b417389a
Journal article

Recent developments in the MOCVD and ALD of rare earth oxides and silicates

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081

DOI
10.1016/j.mseb.2004.12.081
Journal article

Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004)

Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2005). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004). JOURNAL OF CRYSTAL GROWTH, 276(1-2), 333. doi:10.1016/j.jcrysgro.2005.01.093

DOI
10.1016/j.jcrysgro.2005.01.093
Journal article

Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques

Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.200406348

DOI
10.1002/cvde.200406348
Journal article

A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD

Potter, R., Awad, A., Chalker, P. R., Wang, P., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD. MRS Proceedings, 902. doi:10.1557/proc-0902-t02-02

DOI
10.1557/proc-0902-t02-02
Journal article

2004

Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor

Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109

DOI
10.1016/j.jcrysgro.2004.08.109
Journal article

Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor

Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310

DOI
10.1002/cvde.200306310
Journal article

Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor

Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313

DOI
10.1002/cvde.200406313
Journal article

Some recent developments in the MOCVD and ALD of high-κ dielectric oxides

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2004). Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525j

DOI
10.1039/b405525j
Journal article

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6

DOI
10.1023/B:JMSE.0000043417.59029.d6
Journal article

Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift

Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935

DOI
10.1049/ip-opt:20040935
Conference Paper

Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors

Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301

DOI
10.1002/cvde.200306301
Journal article

Optical properties of GaNAs and GaInAsN quantum wells

Potter, R. J., & Balkan, N. (2004). Optical properties of GaNAs and GaInAsN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3387-S3412. doi:10.1088/0953-8984/16/31/026

DOI
10.1088/0953-8984/16/31/026
Journal article

Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition

Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424

DOI
10.1063/1.1755424
Journal article

Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides

Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h

DOI
10.1039/b312697h
Journal article

2003

Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission

Potter, R. J., Balkan, N., Carrère, H., Arnoult, A., Bedel, E., & Marie, X. (2003). Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission. APPLIED PHYSICS LETTERS, 82(20), 3400-3402. doi:10.1063/1.1576511

DOI
10.1063/1.1576511
Journal article

Band structure and optical gain in GaInAsN quantum wells

Carrère, H., Arnoult, A., Marie, X., Amand, T., Bedel-Pereira, E., Potter, R. J., & Balkan, N. (2003). Band structure and optical gain in GaInAsN quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 245-246. doi:10.1016/S1386-9477(02)00784-1

DOI
10.1016/S1386-9477(02)00784-1
Journal article

Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement

Potter, R. J., Alexandropoulos, D., Erol, A., Mazzucato, S., Balkan, N., Adams, M. J., . . . Fontaine, C. (2003). Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 240-241. doi:10.1016/S1386-9477(02)00782-8

DOI
10.1016/S1386-9477(02)00782-8
Journal article

Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors

Sceats, R., Dyson, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., Balkan, N., . . . Pinches, S. (2003). Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 607-609. doi:10.1016/S1386-9477(02)00884-6

DOI
10.1016/S1386-9477(02)00884-6
Journal article

Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells

Mazzucato, S., Erol, A., Teke, A., Arikan, M. C., Potter, R. J., Balkan, N., . . . Arnoult, A. (2003). Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 250-251. doi:10.1016/S1386-9477(02)00786-5

DOI
10.1016/S1386-9477(02)00786-5
Journal article

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X

DOI
10.1016/S1386-9477(02)00783-X
Journal article

The operation of a wavelength converter based on a field effect light emitting and absorbing heterojunction

Wah, J. Y., Balkan, N., Potter, R. J., & Roberts, J. S. (2003). The operation of a wavelength converter based on a field effect light emitting and absorbing heterojunction. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 196(2), 496-503. doi:10.1002/pssa.200305952

DOI
10.1002/pssa.200305952
Journal article

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

Mazzucato, S., Balkan, N., Teke, A., Erol, A., Potter, R. J., Arikan, M. C., . . . Lacoste, G. (2003). In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells. JOURNAL OF APPLIED PHYSICS, 93(5), 2440-2448. doi:10.1063/1.1541104

DOI
10.1063/1.1541104
Journal article

Optical properties of GaInNAs/GaAs quantum wells

Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5

DOI
10.1016/S0038-1101(02)00394-5
Journal article

Bi-directional field effect light emitting and absorbing heterojunction with Ga<sub>0.8</sub>In<sub>0.2</sub>N<sub>0.015</sub>As<sub>0.985</sub> at 1250 nm

Wah, J. Y., Loubet, N., Potter, R. J., Mazzucato, S., Arnoult, A., Carrère, H., . . . Balkan, N. (2003). Bi-directional field effect light emitting and absorbing heterojunction with Ga<sub>0.8</sub>In<sub>0.2</sub>N<sub>0.015</sub>As<sub>0.985</sub> at 1250 nm. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 150 (pp. 72-74). doi:10.1049/ip-opt:20030051

DOI
10.1049/ip-opt:20030051
Conference Paper

Time resolved PL study of GaInNAs quantum wells

Potter, R. J., Balkan, N., Marie, X., Senes, M., Carrère, H., Arnoult, A., & Fontaine, C. (2003). Time resolved PL study of GaInNAs quantum wells. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 150 (pp. 75-76). doi:10.1049/ip-opt:20030050

DOI
10.1049/ip-opt:20030050
Conference Paper

Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors

Potter, R. J., Marshall, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Vehkamäki, M., . . . Smith, L. M. (2004). Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 97-108). Retrieved from https://www.webofscience.com/

Conference Paper

Optical processes in dilute nitrides

Potter, R. J. (2003). Optical processes in dilute nitrides. (PhD Thesis, The University of Essex).

Thesis / Dissertation

2001

Compositional variation in as-grown GaInNAs/GaAs quantum well structures

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4

DOI
10.1016/S0022-0248(01)01535-4
Journal article

Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs

Potter, R. J., Balkan, N., Marie, X., Carr�re, H., Bedel, E., & Lacoste, G. (2001). Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs. physica status solidi (a), 187(2), 623-632. doi:3.0.co;2-q">10.1002/1521-396x(200110)187:2<623::aid-pssa623>3.0.co;2-q

DOI
10.1002/1521-396x(200110)187:2<623::aid-pssa623>3.0.co;2-q
Journal article

Interaction Strength between the Highly Localised Nitrogen States and tne Extended Semiconductor Matrix States in GaInNAs

Potter, R. J., Balkan, N., Marie, X., Carrère, H., Bedel, E., & Lacoste, G. (2001). Interaction Strength between the Highly Localised Nitrogen States and tne Extended Semiconductor Matrix States in GaInNAs. Physica Status Solidi (A) Applied Research, 187(2), 623-632. doi:3.0.CO;2-Q">10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.0.CO;2-Q

DOI
10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.0.CO;2-Q
Journal article

Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs

Potter, R. J., Balkan, N., Marie, X., Carrère, H., Bedel, E., & Lacoste, G. (2001). Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 187(2), 623-632. doi:3.3.CO;2-H">10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.3.CO;2-H

DOI
10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.3.CO;2-H
Journal article

1.5 μm surface emission from GaInAsP/InP HELLISH structures

Sceats, R., Hepburn, C. J., Potter, R., Dyson, A., Balkan, N., & Adams, M. J. (2001). 1.5 μm surface emission from GaInAsP/InP HELLISH structures. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 723-732). doi:10.1117/12.432628

DOI
10.1117/12.432628
Conference Paper

Optical characterization of GaInNAs

Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617

DOI
10.1117/12.432617
Conference Paper

Hot electron light emission from a GaInAsP/InP structure

Sceats, R., Dyson, A., Potter, R., Boland-Thoms, A., Balkan, N., Adams, M. J., & Button, C. C. (2001). Hot electron light emission from a GaInAsP/InP structure. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 148 (pp. 60-64). doi:10.1049/ip-opt:20010131

DOI
10.1049/ip-opt:20010131
Conference Paper

Compositional variation in as-grown GaInNAs/GaAs quantum well structures

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., . . . Adams, M. J. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. J. Crystal Growth Letts., 233(1-2), 1.

Journal article

The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures

Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967

DOI
10.1006/spmi.2000.0967
Journal article

2000

Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403

DOI
10.1117/12.391403
Journal article

VCSEL structure hot electron light emitter

Balkan, N., Serpengüzel, A., O'Brien-Davies, A., Sökmen, I., Hepburn, C., Potter, R., . . . Roberts, J. S. (2000). VCSEL structure hot electron light emitter. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74(1-3), 96-100. doi:10.1016/S0921-5107(99)00542-5

DOI
10.1016/S0921-5107(99)00542-5
Journal article

Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.

Conference Paper

1999

Hot electron VCSEL

Balkan, N., Sokmen, I., O'Brien-Davies, A., Potter, R., Hepburn, C., Boland-Thoms, A., . . . Roberts, J. (1999). Hot electron VCSEL. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII Vol. 3625 (pp. 336-345). doi:10.1117/12.356892

DOI
10.1117/12.356892
Conference Paper

1998

The operation of a novel hot electron Vertical Cavity Surface Emitting Laser

Balkan, N., O'Brien, A., Thoms, A. B., Potter, R., Poolton, N., Adams, M., . . . Roberts, J. (1998). The operation of a novel hot electron Vertical Cavity Surface Emitting Laser. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 Vol. 3283 (pp. 162-170). doi:10.1117/12.316680

DOI
10.1117/12.316680
Conference Paper

A Hot Electron Surface Emitting Laser: HELLISH

O'Brien, A., Sceats, R., Potter, R., Poolton, N., Masum, J., Boland-Thoms, A., . . . Adams, M. (n.d.). A Hot Electron Surface Emitting Laser: HELLISH. In CLEO/Europe Conference on Lasers and Electro-Optics Vol. 70 (pp. 34). IEEE. doi:10.1109/cleoe.1998.718925

DOI
10.1109/cleoe.1998.718925
Conference Paper

A Hot Electron Surface emitting Laser: HELLISH

O'Brien, A., Sceats, R., Potter, R., Poolton, N., Masum, J., Boland-Thoms, A., . . . Adams, M. (1998). A Hot Electron Surface emitting Laser: HELLISH. In Conference on Lasers and Electro-Optics-Europe Vol. 70 (pp. CMH9). Optica Publishing Group. doi:10.1364/cleo_europe.1998.cmh9

DOI
10.1364/cleo_europe.1998.cmh9
Conference Paper