Publications
Selected publications
- Epitaxial Crystal Growth: Methods and Materials (Chapter - 2017)
- Basic Studies in Molecular Beam Epitaxy, past, present & some future directions (Chapter - 2004)
- Basic studies of molecular beam epitaxy—past, present and some future directions (Conference Paper - 2004)
- Growth, microstructure and morphology of epitaxial ScGaN films (Journal article - 2012)
- Carbon delta doping in chemical beam epitaxy using CBr4 (Journal article - 1997)
- Di-Carbon Defects in Annealed Highly Carbon Doped GaAs (Journal article - 1997)
- In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy (Journal article - 1995)
- Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4 (Journal article - 1994)
2018
Composition-variations and phase-segregation in InGaAsN grown by CBE
Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from https://www.webofscience.com/
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from https://www.webofscience.com/
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/9781351074636
2017
Epitaxial Crystal Growth: Methods and Materials
Capper, P., Irvine, S., & Joyce, T. (2017). Epitaxial Crystal Growth: Methods and Materials. In Springer Handbooks (pp. 1). Springer International Publishing. doi:10.1007/978-3-319-48933-9_14
2014
Electronic structure and local distortions in epitaxial ScGaN films
Knoll, S. M., Rovezzi, M., Zhang, S., Joyce, T. B., & Moram, M. A. (2014). Electronic structure and local distortions in epitaxial ScGaN films. JOURNAL OF PHYSICS-CONDENSED MATTER, 26(22). doi:10.1088/0953-8984/26/22/225801
Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions
Knoll, S. M., Rhode, S. K., Zhang, S., Joyce, T. B., & Moram, M. A. (2014). Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions. APPLIED PHYSICS LETTERS, 104(10). doi:10.1063/1.4868538
2012
Growth, microstructure and morphology of epitaxial ScGaN films
Knoll, S. M., Zhang, S., Joyce, T. B., Kappers, M. J., Humphreys, C. J., & Moram, M. A. (2012). Growth, microstructure and morphology of epitaxial ScGaN films. physica status solidi (a), 209(1), 33-40. doi:10.1002/pssa.201100158
2009
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008)
Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., MurreyB, R. T., Joyce, T. B., & Rushworth, S. A. (2009). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008). JOURNAL OF CRYSTAL GROWTH, 311(23-24), 4812. doi:10.1016/j.jcrysgro.2009.09.028
Structural properties of wurtzitelike ScGaN films grown by NH<sub>3</sub>-molecular beam epitaxy
Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., . . . Humphreys, C. J. (2009). Structural properties of wurtzitelike ScGaN films grown by NH<sub>3</sub>-molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(11). doi:10.1063/1.3268466
2008
Thermal stability of C-doped GaAs/AlAs DBR structures
Liang, M. S., Bullough, T. J., & Joyce, T. B. (2008). Thermal stability of C-doped GaAs/AlAs DBR structures. Solid-State Electronics, 52(8), 1256-1259. doi:10.1016/j.sse.2008.06.015
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si
Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., Murray, R. T., Joyce, T. B., & Rushworth, S. A. (2008). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. JOURNAL OF CRYSTAL GROWTH, 310(5), 1010-1014. doi:10.1016/j.jcrysgro.2007.11.131
2007
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
Moram, M. A., Kappers, M. J., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. JOURNAL OF CRYSTAL GROWTH, 308(2), 302-308. doi:10.1016/j.jcrysgro.2007.09.009
Epitaxial Crystal Growth: Methods and Materials
Capper, P., Irvine, S., & Joyce, T. (2006). Epitaxial Crystal Growth: Methods and Materials. In Springer Handbook of Electronic and Photonic Materials (pp. 271-301). Springer US. doi:10.1007/978-0-387-29185-7_14
2006
Transition from electron accumulation to depletion at InGaN surfaces
Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976
Microstructure of epitaxial scandium nitride films grown on silicon
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure of epitaxial scandium nitride films grown on silicon. APPLIED SURFACE SCIENCE, 252(24), 8385-8387. doi:10.1016/j.apsusc.2005.11.069
Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., & Chalker, P. R. (2006). Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. JOURNAL OF APPLIED PHYSICS, 100(2). doi:10.1063/1.2217106
Microstructure and strain-free lattice parameters of Sc<sub>x</sub>Ga<sub>1-x</sub>N films
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure and strain-free lattice parameters of Sc<sub>x</sub>Ga<sub>1-x</sub>N films. In GaN, AIN, InN and Related Materials Vol. 892 (pp. 723-727). Retrieved from https://www.webofscience.com/
Microstructural, Optical and Elastic Properties of ScGaN Thin Films
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructural, Optical and Elastic Properties of ScGaN Thin Films. Mater Res Soc Symp Proc, 892, 723-727.
2005
Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. MRS Online Proceedings Library, 892(1). doi:10.1557/proc-0892-ff28-07
2004
Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates
Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10
Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD
Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6
Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift
Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935
The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012
Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices
Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196
Basic studies of molecular beam epitaxy—past, present and some future directions
Joyce, B. A., & Joyce, T. B. (2004). Basic studies of molecular beam epitaxy—past, present and some future directions. In Journal of Crystal Growth Vol. 264 (pp. 605-619). Elsevier BV. doi:10.1016/j.jcrysgro.2003.12.045
Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy
Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906
Basic Studies in Molecular Beam Epitaxy, past, present & some future directions
Joyce, B. A., & Joyce, T. B. (2004). Basic Studies in Molecular Beam Epitaxy, past, present & some future directions. In R. Feigelson (Ed.), 50 Years Progress in Crystal Growth: A Reprint Collection (pp. 268). Amsterdam: Elsevier.
2003
Joyce, T. B. (2003). Unknown Title. In Journal of Materials Science: Materials in Electronics Vol. 14 (pp. 551-553). Springer Science and Business Media LLC. doi:10.1023/a:1024541617896
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X
Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs
Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5
Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well
White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0
Optical properties of GaInNAs/GaAs quantum wells
Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5
In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures
Akçay, N., Erol, A., Arikan, M., Mazzucato, S., Chalker, P. R., & Joyce, T. B. (2003). In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 96-98. doi:10.1049/ip-opt:20030043
2002
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 13(9), 525-529. doi:10.1023/A:1019641611417
Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers
Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.
2001
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4
Optical characterization of GaInNAs
Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617
The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures
Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967
2000
Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403
Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering
Chalker, P. R., Morrice, D., Joyce, T. B., Noakes, T. C. Q., Bailey, P., & Considine, L. (2000). Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering. DIAMOND AND RELATED MATERIALS, 9(3-6), 520-523. doi:10.1016/S0925-9635(99)00259-9
Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy
Morrice, D. E., Farrell, T., Joyce, T. B., & Chalker, P. R. (2000). Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy. DIAMOND AND RELATED MATERIALS, 9(3-6), 460-463. doi:10.1016/S0925-9635(99)00282-4
Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.
Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide
Coward, K. M., Jones, A. C., Pemble, M. E., Joyce, T. B., & Smith, L. M. (2000). Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide. Journal of Crystal Growth, 209(2-3), 286-289. doi:10.1016/s0022-0248(99)00556-4
1999
Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy
Joyce, T. B., Chalker, P. R., & Farrell, T. (1999). Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 10(8), 585-588. doi:10.1023/A:1008909008317
Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs
Jothilingam, R., Farrell, T., Joyce, T. B., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53(1-2), 7-10. doi:10.1016/s0042-207x(98)00411-4
Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices
Chalker, P. R., Joyce, T. B., Johnston, C., Crossley, J. A. A., Huddlestone, J., Whitfield, M. D., & Jackman, R. B. (1999). Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices. In DIAMOND AND RELATED MATERIALS Vol. 8 (pp. 309-313). doi:10.1016/S0925-9635(98)00263-5
Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)
Chalker, P. R., Joyce, T. B., & Farrell, T. (1999). Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100). DIAMOND AND RELATED MATERIALS, 8(2-5), 373-376. doi:10.1016/S0925-9635(98)00374-4
Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)
Chalker, P. R., Joyce, T. B., Farrell, T., Johnston, C., Crossley, A., & Eccles, J. (1999). Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100). THIN SOLID FILMS, 343, 575-578. doi:10.1016/S0040-6090(98)01723-4
1998
A comparison of the transitory periods in GaAs and AlGaAs CBE growth
Hill, D., Farrell, T., Joyce, T. B., & Bullough, T. J. (1998). A comparison of the transitory periods in GaAs and AlGaAs CBE growth. Journal of Crystal Growth, 188(1-4), 21-25. doi:10.1016/s0022-0248(98)00062-1
Low-temperature laser assisted CBE-growth of AlGaAs
Jothilingam, R., Farrell, T., Joyce, T. B., & Goodhew, P. J. (1998). Low-temperature laser assisted CBE-growth of AlGaAs. Journal of Crystal Growth, 188(1-4), 39-44. doi:10.1016/s0022-0248(98)00085-2
Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy
Joyce, T. B., Farrell, T., & Davidson, B. R. (1998). Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy. Journal of Crystal Growth, 188(1-4), 211-219. doi:10.1016/s0022-0248(98)00051-7
Photo Modified Growth of GaAs by Chemical Beam Epitaxy
Jothilingam, R., Farrell, T., Joyce, T. B., & Goodhew, P. J. (1998). Photo Modified Growth of GaAs by Chemical Beam Epitaxy. MRS Proceedings, 510. doi:10.1557/proc-510-113
1997
The suppression of misfit dislocation introduction in heavily carbon doped GaAs
Westwater, S. P., Bullough, T. J., Joyce, T. B., Davidson, B. R., & Hart, L. (1997). The suppression of misfit dislocation introduction in heavily carbon doped GaAs. Applied Physics Letters, 70(1), 60-62. doi:10.1063/1.119306
Carbon delta doping in chemical beam epitaxy using CBr4
Joyce, T. B., Bullough, T. J., Farrell, T., Davidson, B. R., Sykes, D. E., & Chew, A. (1997). Carbon delta doping in chemical beam epitaxy using CBr4. Journal of Crystal Growth, 175-176, 377-382. doi:10.1016/s0022-0248(96)00957-8
Di-Carbon Defects in Annealed Highly Carbon Doped GaAs
Wagner, J., Newman, R. C., Davidson, B. R., Westwater, S. P., Bullough, T. J., Joyce, T. B., . . . Öberg, S. (n.d.). Di-Carbon Defects in Annealed Highly Carbon Doped GaAs. Physical Review Letters, 78(1), 74-77. doi:10.1103/physrevlett.78.74
Transient surface states during the CBE growth of GaAs
Farrell, T., Hill, D., Joyce, T. B., Bullough, T. J., & Weightman, P. (1997). Transient surface states during the CBE growth of GaAs. JOURNAL OF CRYSTAL GROWTH, 175, 1217-1222. doi:10.1016/S0022-0248(96)00962-1
1996
The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
Ashwin, M. J., Pritchard, R. E., Newman, R. C., Joyce, T. B., Bullough, T. J., Wagner, J., . . . Oberg, S. (1996). The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon. JOURNAL OF APPLIED PHYSICS, 80(12), 6754-6760. doi:10.1063/1.363803
A calibration of the H-C<inf>As</inf> stretch mode in GaAs
Davidson, B. R., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). A calibration of the H-C<inf>As</inf> stretch mode in GaAs. Semiconductor Science and Technology, 11(3), 455-457.
An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy
Boyd, A. R., Joyce, T. B., & Beanland, R. (1996). An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy. Journal of Crystal Growth, 164(1-4), 51-57. doi:10.1016/0022-0248(95)01074-2
Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4
Davidson, B. R., Hart, L., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4. Journal of Crystal Growth, 164(1-4), 383-388. doi:10.1016/0022-0248(96)00034-6
Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs
Boyd, A. R., Bullough, T. J., Farrell, T., & Joyce, T. B. (1996). Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs. Journal of Crystal Growth, 164(1-4), 71-76. doi:10.1016/0022-0248(96)00007-3
Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring
Joyce, T. B., Westwater, S. P., Goodhew, P. J., & Pritchard, R. E. (1996). Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring. Journal of Crystal Growth, 164(1-4), 371-376. doi:10.1016/0022-0248(96)00019-x
Sulphur doping of InGaAs using diethylsulphide
Petkos, G. M., Goodhew, P. J., & Joyce, T. B. (1996). Sulphur doping of InGaAs using diethylsulphide. Journal of Crystal Growth, 164(1-4), 415-419. doi:10.1016/0022-0248(96)00030-9
1995
Raman spectroscopic study of the H-C<sub>As</sub>complex in epitaxial AlAs
Wagner, J., Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., . . . Roberts, J. S. (1995). Raman spectroscopic study of the H-C<sub>As</sub>complex in epitaxial AlAs. Semiconductor Science and Technology, 10(5), 639-644. doi:10.1088/0268-1242/10/5/012
A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy
Beanland, R., Aindow, M., Joyce, T. B., Kidd, P., Lourenço, M., & Goodhew, P. J. (1995). A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy. Journal of Crystal Growth, 149(1-2), 1-11. doi:10.1016/0022-0248(94)00669-5
Dynamics of the H-CAs complex in GaAs determined from Raman measurements.
Wagner, J., Bachem, K. H., Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1995). Dynamics of the H-CAs complex in GaAs determined from Raman measurements.. Physical review. B, Condensed matter, 51(7), 4150-4158. doi:10.1103/physrevb.51.4150
In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy
Joyce, T. B., Bullough, T. J., & Westwater, S. (1995). In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy. Journal of Crystal Growth, 146(1-4), 394-398. doi:10.1016/0022-0248(94)00493-5
The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy
Pfeffer, T. L., Bullough, T. J., Joyce, T. B., & Jones, A. C. (1995). The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy. Journal of Crystal Growth, 146(1-4), 399-403. doi:10.1016/0022-0248(94)00492-7
The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy
Joyce, T. B., Pfeffer, T. L., Bullough, T. J., Petkos, G., Goodhew, P. J., & Jones, A. C. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-n
1994
Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4
Joyce, T. B., Bullough, T. J., & Farrell, T. (1994). Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4. Applied Physics Letters, 65(17), 2193-2195. doi:10.1063/1.112759
Growth of GaAs on Si(001) by CBE using TEG and AsH<inf>3</inf>
Xing, Y., Joyce, T. B., Kiely, C. J., & Goodhew, P. J. (1994). Growth of GaAs on Si(001) by CBE using TEG and AsH<inf>3</inf>. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 15(4), 229-234.
The structure and vibrational modes of H-C<sub>As</sub>pairs in passivated AlAs grown by chemical beam epitaxy
Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). The structure and vibrational modes of H-C<sub>As</sub>pairs in passivated AlAs grown by chemical beam epitaxy. Semiconductor Science and Technology, 9(2), 140-149. doi:10.1088/0268-1242/9/2/003
Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors
Davidson, B. R., Newman, R. C., Pritchard, R. E., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors. Materials Research Society Symposium Proceedings, 325, 241-246.
Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy
Joyce, T. B., Pfeffer, T., Bullough, T. J., & Jones, A. C. (1994). Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 135(1-2), 31-35. doi:10.1016/0022-0248(94)90722-6
Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in situ etching of GaAs using CBr<inf>4</inf>
Joyce, T. B., Bullough, T. J., & Farrell, T. (1994). Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in situ etching of GaAs using CBr<inf>4</inf>. Applied Physics Letters, 65(17), 2193-2195. doi:10.1063/1.112759
1993
Dynamics of the H-CAs complex in GaAs.
Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Dynamics of the H-CAs complex in GaAs.. Physical review. B, Condensed matter, 48(23), 17106-17113. doi:10.1103/physrevb.48.17106
Orientations and morphology of Al layers grown on GaAs by chemical beam epitaxy
Sun, D., Beanland, R., Joyce, T. B. F., Armstrong, J. V., Bullough, T. J., & Goodhew, P. J. (1993). Orientations and morphology of Al layers grown on GaAs by chemical beam epitaxy. Journal of Crystal Growth, 132(3-4), 592-598. doi:10.1016/0022-0248(93)90086-c
Hydrogen wag modes and transverse carbon modes of H-C<sub>As</sub>complexes in GaAs doped with<sup>12</sup>C or<sup>13</sup>C
Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Hydrogen wag modes and transverse carbon modes of H-C<sub>As</sub>complexes in GaAs doped with<sup>12</sup>C or<sup>13</sup>C. Semiconductor Science and Technology, 8(9), 1783-1785. doi:10.1088/0268-1242/8/9/021
Use of a silicon strip doping source in chemical beam epitaxy
Joyce, T. B., & Bullough, T. J. (1993). Use of a silicon strip doping source in chemical beam epitaxy. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 11(5), 2865-2866. doi:10.1116/1.578658
Microstructure of GaAs grown by excimer laser-assisted chemical beam epitaxy
Farrell, T., Armstrong, J. V., Beanland, R., Bullough, T. J., Joyce, T. B., & Goodhew, P. J. (1993). Microstructure of GaAs grown by excimer laser-assisted chemical beam epitaxy. Semiconductor Science and Technology, 8(6), 1112-1117. doi:10.1088/0268-1242/8/6/019
CARBON ACCEPTORS PASSIVATED WITH HYDROGEN AND THE SEARCH FOR CARBON DONORS IN HIGHLY DOPED GAAS C
ASHWIN, M. J., DAVIDSON, B. R., WOODHOUSE, K., NEWMAN, R. C., BULLOUGH, T. J., JOYCE, T. B., . . . BRADLEY, R. R. (1993). CARBON ACCEPTORS PASSIVATED WITH HYDROGEN AND THE SEARCH FOR CARBON DONORS IN HIGHLY DOPED GAAS C. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8(5), 625-629. doi:10.1088/0268-1242/8/5/001
Growth of high quality gallium arsenide on HF-etched silicon (001) by chemical beam epitaxy
Xing, Y. R., Jamal, Z., Joyce, T. B., Bullough, T. J., Kiely, C. J., & Goodhew, P. J. (1993). Growth of high quality gallium arsenide on HF-etched silicon (001) by chemical beam epitaxy. Applied Physics Letters, 62(14), 1653-1655. doi:10.1063/1.108616
Beam equivalent pressure measurements in chemical beam epitaxy
Joyce, T. B., & Bullough, T. J. (1993). Beam equivalent pressure measurements in chemical beam epitaxy. Journal of Crystal Growth, 127(1-4), 265-269. doi:10.1016/0022-0248(93)90619-8
Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenide
Farrell, T., Armstrong, J. V., Bullough, T. J., Beanland, R., Joyce, T. B., & Goodhew, P. J. (1993). Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenide. Journal of Crystal Growth, 127(1-4), 148-151. doi:10.1016/0022-0248(93)90594-m
The Growth of GaAs and AlGaAs by Chemical Beam Epitaxy
Joyce, T. B. F. (1993). The Growth of GaAs and AlGaAs by Chemical Beam Epitaxy. (PhD Thesis, The University of Liverpool).
1992
CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors
Joyce, T. B., Bullough, T. J., Kightley, P., Kiely, C. J., Xing, Y. R., & Goodhew, P. J. (1992). CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors. Journal of Crystal Growth, 120(1-4), 206-211. doi:10.1016/0022-0248(92)90392-v
Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity
Armstrong, J. V., Farrell, T., Joyce, T. B., Kightley, P., Bullough, T. J., & Goodhew, P. J. (1992). Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity. Journal of Crystal Growth, 120(1-4), 84-87. doi:10.1016/0022-0248(92)90368-s
XeCl excimer laser assisted CBE growth of GaAs
Fareell, T., Armstrong, J. V., Joyce, T. B., Bullough, T. J., Kightley, P., & Goodhew, P. J. (1992). XeCl excimer laser assisted CBE growth of GaAs. Journal of Crystal Growth, 120(1-4), 395-398. doi:10.1016/0022-0248(92)90424-h
High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy
Xing, Y. R., Devenish, R. W., Joyce, T. B. F., Kiely, C. J., Bullough, T. J., & Goodhew, P. J. (1992). High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy. Applied Physics Letters, 60(5), 616-618. doi:10.1063/1.106571
1990
An integrated safety system for CBE
Joyce, T. B. (1990). An integrated safety system for CBE. Journal of Crystal Growth, 105(1-4), 299-305. doi:10.1016/0022-0248(90)90378-x