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Ivona Mitrovic

Professor Ivona Mitrovic
PhD, MSc, BSc EE

Professor and Head of Group
Electrical Engineering and Electronics
Part of
School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering

Contact

Ivona@liverpool.ac.uk

+44 (0)151 794 4516

Publications

Selected publications

  1. Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article - 2014)
  2. Analysis of electron capture at oxide traps by electric field injection (Journal article - 2013)
  3. On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks (Journal article - 2012)
  4. Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article - 2016)
  5. Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article - 2015)
  6. Hybrid mixed-dimensional perovskite/metal-oxide heterojunction for all-in-one opto-electric artificial synapse and retinal-neuromorphic system (Journal article - 2022)
  7. A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits (Journal article - 2022)
  8. Oxides for Rectenna Technology (Journal article - 2021)
  9. High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications (Journal article - 2021)
  10. Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures (Journal article - 2018)
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2024

900 MHz RF Power Rectifier Based on Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Diode

Yu, X., Lin, Y. -X., Mitrovic, I. Z., Hall, S., Chao, D. -S., Liang, J. -H., . . . Zhou, J. (2024). 900 MHz RF Power Rectifier Based on Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Diode. In 2024 IEEE Wireless Power Technology Conference and Expo (WPTCE) (pp. 441-444). IEEE. doi:10.1109/wptce59894.2024.10557263

DOI
10.1109/wptce59894.2024.10557263
Conference Paper

2023

2022

(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas

Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. ECS Meeting Abstracts, MA2022-01(19), 1076. doi:10.1149/ma2022-01191076mtgabs

DOI
10.1149/ma2022-01191076mtgabs
Journal article

(Invited) Rare Earth Oxides on Wide Band Gap Semiconductors

Mitrovic, I. Z., Finch, H., Jones, L. A. H., Dhanak, V. R., Hannah, A. N., Valizadeh, R., . . . Mawby, P. A. (2022). (Invited) Rare Earth Oxides on Wide Band Gap Semiconductors. ECS Meeting Abstracts, MA2022-01(19), 1072. doi:10.1149/ma2022-01191072mtgabs

DOI
10.1149/ma2022-01191072mtgabs
Journal article

Enhanced Electrical Properties of Functional MXene Nanosheets Doped Tin Oxide Electron Transport Layer in Perovskite Solar Cells

DOI
10.2139/ssrn.4043098
Preprint

2021

An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

Fang, Y. X., Xu, W. Y., Mitrovic, I. Z., Yang, L., Zhao, C., & Zhao, C. Z. (2021). An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626540

DOI
10.1109/ICICDT51558.2021.9626540
Conference Paper

Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers

Shen, Z., Zhao, C., Mitrovic, I. Z., Zhao, C., Liu, Y., & Yang, L. (2021). Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626507

DOI
10.1109/ICICDT51558.2021.9626507
Conference Paper

Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate

Zhao, T., Zhao, C., Liu, Y., Yang, L., Mitrovic, I. Z., Lim, E. G., & Zhao, C. Z. (2021). Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626497

DOI
10.1109/ICICDT51558.2021.9626497
Conference Paper

Water-induced Combustion-processed Metal-oxide Synaptic Transistor

Liu, Q., Zhao, C., Liu, Y., Mitrovic, I. Z., Xu, W. Y., Yang, L., . . . Yu, X. (2021). Water-induced Combustion-processed Metal-oxide Synaptic Transistor. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626483

DOI
10.1109/ICICDT51558.2021.9626483
Conference Paper

Oxides for Rectenna Technology

Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218

DOI
10.3390/ma14185218
Journal article

An artificial synaptic thin-film transistor based on 2D MXene-TiO<sub>2</sub>

Cao, Y. X., Zhao, C., Mitrovic, I. Z., Liu, Y. N., Yang, L., van Zalinge, H., & Zhao, C. Z. (2021). An artificial synaptic thin-film transistor based on 2D MXene-TiO<sub>2</sub>. In 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EuroSOI-ULIS53016.2021.9560172

DOI
10.1109/EuroSOI-ULIS53016.2021.9560172
Conference Paper

Synaptic transistors based on transparent oxide for neural image recognition

Wang, Q. N., Zhao, C., Liu, W., Mitrovic, I. Z., van Zalinge, H., Liu, Y. N., & Zhao, C. Z. (2021). Synaptic transistors based on transparent oxide for neural image recognition. In 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EuroSOI-ULIS53016.2021.9560177

DOI
10.1109/EuroSOI-ULIS53016.2021.9560177
Conference Paper

2020

Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers

Cao, Z., Mitrovic, I. Z., & Sandall, I. (2020). Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(10), 4269-4273. doi:10.1109/TED.2020.3012122

DOI
10.1109/TED.2020.3012122
Journal article

Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers

Shen, Z., Zhao, C., Mitrovic, I. Z., Zhao, C., & Yang, L. (2020). Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365382

DOI
10.1109/EUROSOI-ULIS49407.2020.9365382
Conference Paper

(Invited) Band Line-up of High-k Oxides on GaN

Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Meeting Abstracts, MA2020-01(15), 1043. doi:10.1149/ma2020-01151043mtgabs

DOI
10.1149/ma2020-01151043mtgabs
Journal article

2019

Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique

Fang, Y., Zhao, C., Hall, S., Mitrovic, I. Z., Xu, W., Yang, L., . . . Zhao, C. (2019). Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique. Radiation Physics and Chemistry. doi:10.1016/j.radphyschem.2019.108644

DOI
10.1016/j.radphyschem.2019.108644
Journal article

Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Shen, Z., Qi, Y., Mitrovic, I. Z., Zhao, C., Hall, S., Yang, L., . . . Zhao, C. (2019). Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10(7). doi:10.3390/mi10070446

DOI
10.3390/mi10070446
Journal article

Characteristics of Ni/AlO<sub>x</sub>/Pt RRAM devices with various dielectric fabrication temperatures

Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., . . . Huang, Y. B. (2019). Characteristics of Ni/AlO<sub>x</sub>/Pt RRAM devices with various dielectric fabrication temperatures. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790838

DOI
10.1109/icicdt.2019.8790838
Conference Paper

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

Cai, Y., Wang, Y., Cui, M., Liu, W., Wen, H., Zhao, C., . . . Chalker, P. R. (2019). Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790844

DOI
10.1109/icicdt.2019.8790844
Conference Paper

Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlO<sub>x</sub> Dielectrics using Hydrogen Peroxide

Fang, Y. X., Zhao, T. S., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., & Yang, L. (2019). Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlO<sub>x</sub> Dielectrics using Hydrogen Peroxide. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790870

DOI
10.1109/icicdt.2019.8790870
Conference Paper

Plasma-Enhanced Combustion-Processed Al<sub>2</sub>O<sub>3</sub> Gate Oxide for In<sub>2</sub>O<sub>3</sub> Thin Film Transistors

Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . Cao, Y. X. (2019). Plasma-Enhanced Combustion-Processed Al<sub>2</sub>O<sub>3</sub> Gate Oxide for In<sub>2</sub>O<sub>3</sub> Thin Film Transistors. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790939

DOI
10.1109/icicdt.2019.8790939
Conference Paper

Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric

Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . Yu, S. C. (2019). Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from https://www.webofscience.com/

Conference Paper

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters

Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., . . . Zhao, C. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790909

DOI
10.1109/icicdt.2019.8790909
Conference Paper

AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers

Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (2019). AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers. In 2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA). doi:10.23919/icpe2019-ecceasia42246.2019.8796971

DOI
10.23919/icpe2019-ecceasia42246.2019.8796971
Conference Paper

Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., . . . Huang, Y. B. (2019). Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from https://www.webofscience.com/

Conference Paper

2018

Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., . . . Zhao, C. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) (pp. 1-2). IEEE. doi:10.1109/edssc.2018.8487160

DOI
10.1109/edssc.2018.8487160
Conference Paper

Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2

Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207

DOI
10.1063/1.5030207
Journal article

Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices

Žurauskaitė, L., Jones, L., Dhanak, V. R., Mitrovic, I. Z., Hellström, P. -E., & Östling, M. (2018). Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices. In SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8 Vol. 87 (pp. 67-73). Cancun, Mexico.

Conference Paper

Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge

Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge. AIP ADVANCES, 8(6). doi:10.1063/1.5034459

DOI
10.1063/1.5034459
Journal article

Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs

Supardan, S. N., Das, P., Shaw, A. P., Major, J. D., Valizadeh, R., Hannah, A., . . . Mitrovic, I. Z. (2018). Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In UK Nitrides Consortium (UKNC) Winter Conference. University of Manchester.

Conference Paper

2017

Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors with HfxZr1-xOy Thin Films

Mu, Y., Fang, Y., Zhao, C. Z., Zhao, C., Lu, Q., Qi, Y., . . . Chalker, P. R. (2017). Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(12), 2913-2921. doi:10.1109/TNS.2017.2768566

DOI
10.1109/TNS.2017.2768566
Journal article

Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043

DOI
10.1016/j.mee.2017.05.043
Journal article

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284

DOI
10.1109/TED.2016.2647284
Journal article

Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes

Noureddine, I. N., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2017). Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35(1). doi:10.1116/1.4974219

DOI
10.1116/1.4974219
Journal article

Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(1), 673-682. doi:10.1109/TNS.2016.2633549

DOI
10.1109/TNS.2016.2633549
Journal article

2016

Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack

Mitrovic, I. Z., Supardan, S. N., Hesp, D., Dhanak, V. R., Hall, S., Schamm-Chardon, S., . . . Ostling, M. (2016). Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. In 19th Workshop on Dielectrics in Microelectronics –WODIM 2016. Catania, Italy.

Conference Paper

Tunnel-Barrier Rectifiers for Optical Nantennas

Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecst

DOI
10.1149/07202.0287ecst
Journal article

(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas

Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. ECS Meeting Abstracts, MA2016-01(16), 1011. doi:10.1149/ma2016-01/16/1011

DOI
10.1149/ma2016-01/16/1011
Journal article

Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks

Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2016). Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks. Solar Energy Materials and Solar Cells, 147, 327-333. doi:10.1016/j.solmat.2015.10.007

DOI
10.1016/j.solmat.2015.10.007
Journal article

Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

Mu, Y., Zhao, C. Z., Qi, Y., Lam, S., Zhao, C., Lu, Q., . . . Chalker, P. R. (2016). Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372, 14-28. doi:10.1016/j.nimb.2016.01.035

DOI
10.1016/j.nimb.2016.01.035
Journal article

Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant

Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from https://www.webofscience.com/

Conference Paper

Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films

Jin, J., Zhang, J., Kemal, R. E., Luo, Y., Bao, P., Althobaiti, M., . . . Song, A. (2016). Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673, 54-59. doi:10.1016/j.jallcom.2016.02.215

DOI
10.1016/j.jallcom.2016.02.215
Journal article

2015

Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates

Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., . . . Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8(12), 8169-8182. doi:10.3390/ma8125454

DOI
10.3390/ma8125454
Journal article

Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process

Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2015). Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process. DATA IN BRIEF, 5, 926-928. doi:10.1016/j.dib.2015.10.026

DOI
10.1016/j.dib.2015.10.026
Journal article

Hafnia and alumina on sulphur passivated germanium

Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Poster session presented at the meeting of Unknown Conference. Retrieved from https://www.webofscience.com/

DOI
10.1016/j.vacuum.2015.03.017
Poster

Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors

Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from https://www.webofscience.com/

Conference Paper

Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy

Althobaiti, M. G., Stoner, J., Dhanak, V. R., Potter, R. J., & Mitrovic, I. Z. (2015). Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 161-163). Retrieved from https://www.webofscience.com/

Conference Paper

Characterisation and Modelling of Mg Doped ZnO TFTs

Shaw, A., Gao, C., Jin, J. D., Mitrovic, I. Z., & Hall, S. (2015). Characterisation and Modelling of Mg Doped ZnO TFTs. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 153-156). Retrieved from https://www.webofscience.com/

Conference Paper

Atomic-layer deposited thulium oxide as a passivation layer on germanium

Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121

DOI
10.1063/1.4922121
Journal article

Modelling of Mg doped ZnO TFTs

Shaw, A., Chang, G., Jin, J., Mitrovic, I. Z., & Hall, S. (2015, June 29). Modelling of Mg doped ZnO TFTs. In 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015). University of Glasgow, Glasgow, UK.

Conference Paper

Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers

Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.

Poster

2014

Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties

Engstrom, O., Przewlocki, H. M., Mitrovic, I. Z., & Hall, S. (2014). Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties. In PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) (pp. 369-372). Retrieved from https://www.webofscience.com/

Conference Paper

Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna

Sedghi, N., Mitrovic, I. Z., Ralph, J. F., & Hall, S. (2014). Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna. Cork, Ireland.

Presentation material

Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition

King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174

DOI
10.1116/1.4826174
Journal article

(Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2014). (Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology. ECS Meeting Abstracts, MA2014-01(36), 1357. doi:10.1149/ma2014-01/36/1357

DOI
10.1149/ma2014-01/36/1357
Journal article

'Hafnia on sulphur passivated germanium'

Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I., Hall, S., & Chalker, P. (2014). 'Hafnia on sulphur passivated germanium'. In 13th European surface science Conference (pp. 1-2). Aveiro: EVC13.

Conference Paper

Energy Harvesting Using THz Electronics

Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C. C., Huang, Y., & Ralph, J. F. (2014). Energy Harvesting Using THz Electronics. In FUNCTIONAL NANOMATERIALS AND DEVICES FOR ELECTRONICS, SENSORS AND ENERGY HARVESTING (pp. 241-265). doi:10.1007/978-3-319-08804-4_12

DOI
10.1007/978-3-319-08804-4_12
Chapter

Erratum to: Energy Harvesting Using THz Electronics

Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C., Huang, Y., & Ralph, J. F. (2014). Erratum to: Energy Harvesting Using THz Electronics. In Engineering Materials (pp. E1). Springer International Publishing. doi:10.1007/978-3-319-08804-4_21

DOI
10.1007/978-3-319-08804-4_21
Chapter

Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Nazarov, A., Balestra, F., Kilchytska, V., & Flandre, D. (Eds.) (2014). Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. In . Springer International Publishing. doi:10.1007/978-3-319-08804-4

DOI
10.1007/978-3-319-08804-4
Chapter

2013

Radiation Response Analyzer of Semiconductor Dies

Mu, Y., Zhao, C., Su, S., Zhao, Y., Mitrovic, I., Taylor, S., & Chalker, P. (2013). Radiation Response Analyzer of Semiconductor Dies. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 682-685). Retrieved from https://www.webofscience.com/

Conference Paper

Interface engineering of Ge using thulium oxide: Band line-up study

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. Microelectronic Engineering, 109, 204-207. doi:10.1016/j.mee.2013.03.160

DOI
10.1016/j.mee.2013.03.160
Journal article

Analysis of electron capture at oxide traps by electric field injection

Engstrom, O., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Analysis of electron capture at oxide traps by electric field injection. APPLIED PHYSICS LETTERS, 102(21). doi:10.1063/1.4807845

DOI
10.1063/1.4807845
Journal article

Interface engineering of Ge using thulium oxide: Band line-up study

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. In MICROELECTRONIC ENGINEERING Vol. 109 (pp. 204-207). doi:10.1016/j.mee.2013.03.160

DOI
10.1016/j.mee.2013.03.160
Conference Paper

Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition

Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032

DOI
10.1016/j.mee.2013.03.032
Journal article

Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states

Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544

DOI
10.1063/1.4794544
Journal article

Bound states within the notch of the HfO2/GeO2/Ge stack

Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO2/GeO2/Ge stack. Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(2). doi:10.1116/1.4794378

DOI
10.1116/1.4794378
Journal article

Gate Stacks

Engström, O., Mitrovic, I. Z., Hall, S., Hurley, P. K., Cherkaoui, K., Monaghan, S., . . . Lemme, M. C. (2013). Gate Stacks. In Unknown Book (pp. 23-67). Wiley. doi:10.1002/9781118621523.ch2

DOI
10.1002/9781118621523.ch2
Chapter

'A combinatorial approach to the rapid development of transparent conducting oxides'

Treharne, R. E., Phillips, L. J., Durose, K., Weerakkody, D. A., Mitrovic, I., & Hall, S. (2013). 'A combinatorial approach to the rapid development of transparent conducting oxides'. In IEEE (Ed.), Semiconductor Interface Specialist Conference (pp. 1-2). Arlington, VA: SISC.

Conference Paper

'Solar energy harvesting using THz electronics.' (Invited)

Hall, S., Sedghi, N., Mitrovic, I., Ralph, J., & Huang, Y. (2013). 'Solar energy harvesting using THz electronics.' (Invited). In F. Balestra, & A. N. Nazarov (Eds.), Functional Nanomaterials and Devices (pp. 2). Kyiv: TBA.

Conference Paper

Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack

Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 31. doi:10.1116/1.4794378

DOI
10.1116/1.4794378
Conference Paper

Ge interface engineering by high-k sesquioxides: La2O3, Y2O3 and Tm2O3

Mitrovic, I., Hall, S., Sedghi, N., Dhanak, V. R., Chalker, P. R., Dimoulas, A., . . . Ostling, M. (2013). Ge interface engineering by high-k sesquioxides: La2O3, Y2O3 and Tm2O3. In European Materials Research Society Meeting (pp. 3-7). Strasbourg: EMRS.

Conference Paper

Towards Rectennas for Solar Energy Harvesting

Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., & Hall, S. (2013). Towards Rectennas for Solar Energy Harvesting. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) (pp. 131-134). Retrieved from https://www.webofscience.com/

Conference Paper

2012

Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub>

Mitrovic, I. Z., Przewlocki, H. M., Piskorski, K., Simutis, G., Dhanak, V. R., Sedghi, N., & Hall, S. (2012). Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub>. THIN SOLID FILMS, 520(23), 6959-6962. doi:10.1016/j.tsf.2012.07.082

DOI
10.1016/j.tsf.2012.07.082
Journal article

Influence of interlayer properties on the characteristics of high-<i>k</i> gate stacks

Engstrom, O., Mitrovic, I. Z., & Hall, S. (2012). Influence of interlayer properties on the characteristics of high-<i>k</i> gate stacks. SOLID-STATE ELECTRONICS, 75, 63-68. doi:10.1016/j.sse.2012.04.042

DOI
10.1016/j.sse.2012.04.042
Journal article

On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks

Mitrovic, I. Z., Hall, S., Sedghi, N., Simutis, G., Dhanak, V. R., Bailey, P., . . . Schubert, J. (2012). On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks. JOURNAL OF APPLIED PHYSICS, 112(4). doi:10.1063/1.4746790

DOI
10.1063/1.4746790
Journal article

'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'

Sedghi, N., Dowrick, T., Mitrovic, I., & Hall, S. (2012). 'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

Conference Paper

'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique'

Sedghi, N., Dowrick, T., Engström, O., Mitrovic, I., & Hall, S. (2012). 'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique'. In Workshop on Dielectrics in Microelectronics (pp. 2). Dresden: WODIM.

Conference Paper

'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'

Sedghi, N., Ralph, J. F., Mitrovic, I., & Hall, S. (2012). 'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

Conference Paper

'Ce doped hafnium oxide on silicon'

Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

Conference Paper

2011

Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks

Mitrovic, I. Z., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., Dhanak, V. R., . . . Schubert, J. (2011). Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks. MICROELECTRONIC ENGINEERING, 88(7), 1495-1498. doi:10.1016/j.mee.2011.03.051

DOI
10.1016/j.mee.2011.03.051
Journal article

Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique

Sedghi, N., Mitrovic, I. Z., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35(4), 531-543. doi:10.1149/1.3572303

DOI
10.1149/1.3572303
Journal article

Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the 3-Pulse CV Technique

Sedghi, N., Mitrovic, I., Lopes, J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the 3-Pulse CV Technique. ECS Meeting Abstracts, MA2011-01(22), 1393. doi:10.1149/ma2011-01/22/1393

DOI
10.1149/ma2011-01/22/1393
Journal article

<i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique

Sedghi, N., Mitrovic, I. Z., Hall, S., Lopes, J. M. J., & Schubert, J. (2011). <i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3533267

DOI
10.1116/1.3533267
Journal article

'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'

Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. Jnl. Vac. Sci. B, 29(1), 1-6. Retrieved from http://avspublications.org/

Journal article

'LaGeOx as a route towards effective passivation of Ge interface.'

Mitrovic, I., Hall, S., Sedghi, N., Spencer, P., Dhanak, V. R., Bailey, P., . . . Tsoutsou, A. (2011). 'LaGeOx as a route towards effective passivation of Ge interface.'. In IEEE (Ed.), Semiconductor Insulator Specialist Conference (SISC) (pp. 45-46). Arlington: IEEE.

Conference Paper

'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'

Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. Jnl. Vac. Sci. B, 29(1), 1-8. Retrieved from http://avspublications.org/

Journal article

'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks '

Mitrovic, I., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., & Dhanak, V. (2011). 'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks '. In S. Cristoloveneau (Ed.), Insulating films on Semionductors (pp. 10-13). Grenoble, France: Elsevier.

Conference Paper

Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the 3-Pulse CV Technique

Sedghi, N., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the 3-Pulse CV Technique. In 219th Electrochemical Society Meeting (pp. 1-2). Montreal: ECS.

Conference Paper

Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization

Sedghi, N., Davey, W., Mitrovic, I. Z., & Hall, S. (2011). Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3532823

DOI
10.1116/1.3532823
Journal article

2010

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers

Engström, O., Raeissi, B., Piscator, J., Mitrovic, I. Z., Hall, S., Gottlob, H. D. B., . . . Cherkaoui, K. (n.d.). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology, (4), 81-90. doi:10.26636/jtit.2010.4.1115

DOI
10.26636/jtit.2010.4.1115
Journal article

'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'

Sedghi, N., Davey, W., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2010). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. In Workshop on Dielectrics in Microelectronics (pp. 57). Bratislava: Wodim.

Conference Paper

'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'

Sedghi, N., Davey, W., Mitrovic, I., & Hall, S. (2010). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. In Workshop on Dielectrics in Microelectronics (pp. 127). Bratislava: ECS.

Conference Paper

Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique

Sedghi, N., Davey, W. M., Mitrovic, I., Hall, S., Lopes, J. M. J., & Schubert, J. (2010). Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique. In SISC (pp. 2). San Diego: IEEE.

Conference Paper

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers

Engström, O., Raeissi, B., Piscator, J., Mitrovic, I. Z., Hall, S., Gottlob, H. D. B., . . . Cherkaoui, K. (n.d.). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology, (1), 10-19. doi:10.26636/jtit.2010.1.1023

DOI
10.26636/jtit.2010.1.1023
Journal article

2009

Estimate of dielectric density using spectroscopic ellipsometry

Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. MICROELECTRONIC ENGINEERING, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027

DOI
10.1016/j.mee.2009.03.027
Journal article

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084

DOI
10.1016/j.mee.2009.03.084
Journal article

Substitutional C effect on generation lifetime in MBE-grown SiGeC layers

Mitrovic, I. Z., & Hall, S. (2009). Substitutional C effect on generation lifetime in MBE-grown SiGeC layers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24(2). doi:10.1088/0268-1242/24/2/025009

DOI
10.1088/0268-1242/24/2/025009
Journal article

'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond'

Mitrovic, I., & Hall, S. (2009). 'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond'. Jnl. Telcomms. & IT, 4, 51-60. Retrieved from http://www.nit.eu/czasopisma/JTIT/2009/4/51.pdf

Journal article

Breakdown and degradation of ultrathin Hf-based (HfO<sub>2</sub>)<i><sub>x</sub></i>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> gate oxide films

Uppal, H. J., Mitrovic, I. Z., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2009). Breakdown and degradation of ultrathin Hf-based (HfO<sub>2</sub>)<i><sub>x</sub></i>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> gate oxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 443-447. doi:10.1116/1.3025822

DOI
10.1116/1.3025822
Journal article

Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing

Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904

DOI
10.1116/1.3025904
Journal article

Leakage current effects on <i>C</i>-<i>V</i> plots of high-<i>k</i> metal-oxide-semiconductor capacitors

Lu, Y., Hall, S., Tan, L. Z., Mitrovic, I. Z., Davey, W. M., Raeissi, B., . . . Lemme, M. C. (2009). Leakage current effects on <i>C</i>-<i>V</i> plots of high-<i>k</i> metal-oxide-semiconductor capacitors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 352-355. doi:10.1116/1.3025910

DOI
10.1116/1.3025910
Journal article

2008

Ellipsometric analysis of mixed metal oxides thin films

Buiu, O., Davey, W., Lu, Y., Mitrovic, I. Z., & Hall, S. (2008). Ellipsometric analysis of mixed metal oxides thin films. THIN SOLID FILMS, 517(1), 453-455. doi:10.1016/j.tsf.2008.08.119

DOI
10.1016/j.tsf.2008.08.119
Journal article

'Breakdown and Degradation of Ultra-thin Hf based gate oxide films'

Uppal, H. J., Mitrovic, I., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2008). 'Breakdown and Degradation of Ultra-thin Hf based gate oxide films'. In 15th Workshop on Dielectrics in Microelectronics (pp. 29-30). Berlin: IHP.

Conference Paper

'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing'

Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I., Werner, M., . . . Newcomb, S. B. (2008). 'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing'. In 15th workshop on Dielectric in Microelectronics (pp. 155-156). Berlin: IHP.

Conference Paper

'Leakage current effects on C-V plots of high-k MOS capacitors'

Lu, Y., Hall, S., Mitrovic, I., Davey, W. M., Raeissi, B., Engstrom, O., . . . Lemme, M. C. (2008). 'Leakage current effects on C-V plots of high-k MOS capacitors'. In Wodim (pp. 181-182). Berlin: IHP, Germany.

Conference Paper

'Quest for an optimal Gadolinium Silicate gate dielectric stack'

Mitrovic, I., Werner, M., Davey, W. M., Hall, S., Chalker, P. R., Gottlob, H. D. B., . . . Hurley, P. K. (2008). 'Quest for an optimal Gadolinium Silicate gate dielectric stack'. In Semiconductor Interface Specialist Conference (pp. 1-2). San Diego: IEEE.

Conference Paper

2007

HIGH-κ dielectric stacks for nanoscaled SOI devices

Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2007). HIGH-κ dielectric stacks for nanoscaled SOI devices. NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES, 33-+. doi:10.1007/978-1-4020-6380-0_3

DOI
10.1007/978-1-4020-6380-0_3
Journal article

SiGeCHBTs: Impact of C on device pepformance

Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2007). SiGeCHBTs: Impact of C on device pepformance. In Unknown Book (pp. 171-+). doi:10.1007/978-1-4020-6380-0_13

DOI
10.1007/978-1-4020-6380-0_13
Chapter

Current transport mechanisms in (HfO<sub>2</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub>/SiO<sub>2</sub> gate stacks

Mitrovic, I. Z., Lu, Y., Buiu, O., & Hall, S. (2007). Current transport mechanisms in (HfO<sub>2</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub>/SiO<sub>2</sub> gate stacks. MICROELECTRONIC ENGINEERING, 84(9-10), 2306-2309. doi:10.1016/j.mee.2007.04.087

DOI
10.1016/j.mee.2007.04.087
Journal article

Electrical and structural properties of hafnium silicate thin films

Mitrovic, I. Z., Buiu, O., Hall, S., Bungey, C., Wagner, T., Davey, W., & Lu, Y. (2007). Electrical and structural properties of hafnium silicate thin films. MICROELECTRONICS RELIABILITY, 47(4-5), 645-648. doi:10.1016/j.microrel.2007.01.065

DOI
10.1016/j.microrel.2007.01.065
Journal article

Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition

Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052

DOI
10.1016/j.microrel.2007.01.052
Journal article

Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition

Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035

DOI
10.1016/j.tsf.2006.09.035
Journal article

'Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits'

Gutt, T., Mitrovic, I., Buiu, O., & Hall, S. (2007). 'Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits'. In Electronics and Electronic Technologies Conference Vol. I (pp. 59-61). Opatija, Croatia: MIPRO.

Conference Paper

'Review and perspective of high-k dielectrics on silicon'

Hall, S., Buiu, O., Mitrovic, I., Lu, Y., & Davey, W. M. (2007). 'Review and perspective of high-k dielectrics on silicon'. Jnl of Telecomms and IT, 2, 33-43. Retrieved from http://www.nit.eu/czasopisma/JTIT/2007/2/33.pdf

Journal article

Analysis of Metal:(HfO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>:SiO<inf>2</inf>:Si MOS structure equivalent circuits

Gutt, T., Mitrovic, I. Z., Buiu, O., & Hall, S. (2007). Analysis of Metal:(HfO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>:SiO<inf>2</inf>:Si MOS structure equivalent circuits. In MIPRO 2007 - 30th Jubilee International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, Hypermedia and Grid Systems, MEE /HGS Vol. 1 (pp. 59-61).

Conference Paper

2006

High-κ dielectric stacks for nanoscaled SOI devices

Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2006). High-κ dielectric stacks for nanoscaled SOI devices. In Unknown Book (pp. 33-58).

Chapter

SiGeC HBTs: Impact of C on device performance

Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2006). SiGeC HBTs: Impact of C on device performance. In Unknown Book (pp. 171-178).

Chapter

Spectroellipsometric assessment of HfO<sub>2</sub> thin films

Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215

DOI
10.1016/j.tsf.2005.12.215
Journal article

The base current and related 1/<i>f</i> noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates

Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2006). The base current and related 1/<i>f</i> noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(4-5), 727-731. doi:10.1016/j.mssp.2006.08.029

DOI
10.1016/j.mssp.2006.08.029
Journal article

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301

DOI
10.1149/1.2209301
Journal article

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537

DOI
10.1149/ma2005-02/13/537
Journal article

2005

Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base

Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base. In Unknown Book (Vol. 780, pp. 265-268). Retrieved from https://www.webofscience.com/

Chapter

1/<i>f</i> Noise and generation/recombination noise in SiGeHBTs on SOI

Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 1/<i>f</i> Noise and generation/recombination noise in SiGeHBTs on SOI. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1468-1477. doi:10.1109/TED.2005.850697

DOI
10.1109/TED.2005.850697
Journal article

GSMBE growth and structural characterisation of SiGeC layers for HBT

Zhang, J., Neave, J. H., Li, X. B., Fewster, P. F., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2005). GSMBE growth and structural characterisation of SiGeC layers for HBT. JOURNAL OF CRYSTAL GROWTH, 278(1-4), 505-511. doi:10.1016/j.jcrysgro.2004.12.147

DOI
10.1016/j.jcrysgro.2004.12.147
Journal article

'Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base'

Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 'Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base'. In T. Gonzalez, J. Mateos, & D. Pardo (Eds.), 18th International Conference on Noise and Fluctuations (pp. 265-268). Salamanca, Spain: American Institute of Physics.

Conference Paper

Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications

Mitrovic, I. Z., Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P. L. F., . . . Ashburn, P. (2005). Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20(1), 95-102. doi:10.1088/0268-1242/20/1/016

DOI
10.1088/0268-1242/20/1/016
Journal article

Review of SiGeHBTs on SOI

Mitrovic, I. Z., Buiu, O., Hall, S., Bagnall, D. M., & Ashburn, P. (2005). Review of SiGeHBTs on SOI. SOLID-STATE ELECTRONICS, 49(9), 1556-1567. doi:10.1016/j.sse.2005.07.020

DOI
10.1016/j.sse.2005.07.020
Journal article

SiGe Heterojunction Bipolar Transistors on Insulating Substrates

Hall, S., Buiu, O., Mitrovic, I. Z., El Mubarek, H. A. W., Ashburn, P., Bain, M., . . . Zhang, J. (2005). SiGe Heterojunction Bipolar Transistors on Insulating Substrates. In NATO Science Series II: Mathematics, Physics and Chemistry (pp. 261-272). Springer Netherlands. doi:10.1007/1-4020-3013-4_29

DOI
10.1007/1-4020-3013-4_29
Chapter

2004

Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques

Zhang, J., Neave, J. H., Li, X. B., Fewster, P. P., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2004). Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques. In Proceedings - Electrochemical Society Vol. 7 (pp. 203-214).

Conference Paper

Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures

Mitrovic, I. Z., Buiu, O., Hall, S., & Ward, P. J. (n.d.). Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures. In 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Vol. 2 (pp. 487-490). IEEE. doi:10.1109/icmel.2004.1314869

DOI
10.1109/icmel.2004.1314869
Conference Paper

'Ge+ Implanted SiGe Alloys for HBT devices'

Mitrovic, I., Buiu, O., Hall, S., & Ward, P. J. (2004). 'Ge+ Implanted SiGe Alloys for HBT devices'. In PREP 2004 (pp. 93-94). Hertfordshire, UK: University of Hertfordshire.

Conference Paper

'Optical characterisation of SiGe and SiGe(C) alloy layers for heterojunction bipolar transistors: possibilities and limitations'

Buiu, O., Mitrovic, I., Hall, S., El Mubarek, H. A. W., Ashburn, P., Dilliway, G. D., . . . Zhang, J. (2004). 'Optical characterisation of SiGe and SiGe(C) alloy layers for heterojunction bipolar transistors: possibilities and limitations'. In Optics and Photonics (pp. 21). Glasgow: PHOTON.

Conference Paper

2001

BaTiO3-ceramics electrical model based on intergranular contacts

Mitrović, I., & Mitić, V. V. (2001). BaTiO3-ceramics electrical model based on intergranular contacts. Journal of the European Ceramic Society, 21(15), 2771-2775. doi:10.1016/s0955-2219(01)00361-2

DOI
10.1016/s0955-2219(01)00361-2
Journal article

THE APPLICATION OF STEREOLOGY METHOD FOR ESTIMATING THE NUMBER OF 3D BaTiO3 – CERAMIC GRAINS CONTACT SURFACES

Mitić, V. V., Nikolić, Z. S., Mitrović, I., Jordović, B., & Brankov, V. (n.d.). THE APPLICATION OF STEREOLOGY METHOD FOR ESTIMATING THE NUMBER OF 3D BaTiO3 – CERAMIC GRAINS CONTACT SURFACES. Image Analysis &amp; Stereology, 20(3), 231. doi:10.5566/ias.v20.p231-237

DOI
10.5566/ias.v20.p231-237
Journal article

The influence of Nb2O5 on BaTiO3 ceramics dielectric properties

Mitić, V. V., & Mitrović, I. (2001). The influence of Nb2O5 on BaTiO3 ceramics dielectric properties. Journal of the European Ceramic Society, 21(15), 2693-2696. doi:10.1016/s0955-2219(01)00347-8

DOI
10.1016/s0955-2219(01)00347-8
Journal article

2000

The equivalent electrical model of intergranular impedance of BaTiO/sub 3/-ceramics

Mitic, V. V., Petkovic, P. M., & Mitrovic, I. Z. (n.d.). The equivalent electrical model of intergranular impedance of BaTiO/sub 3/-ceramics. In 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Vol. 1 (pp. 255-258). IEEE. doi:10.1109/icmel.2000.840568

DOI
10.1109/icmel.2000.840568
Conference Paper

1999

BaTiO3 Structure Prognosis

Mitić, V. V., & Mitrović, I. Z. (1999). BaTiO3 Structure Prognosis. In Advanced Science and Technology of Sintering (pp. 431-436). Springer US. doi:10.1007/978-1-4419-8666-5_62

DOI
10.1007/978-1-4419-8666-5_62
Chapter

Computer Simulation of Neck Growth During Sintering Process

Nikolic, Z. S., Mitrovic, I., & Mitic, V. V. (1999). Computer Simulation of Neck Growth During Sintering Process. In Advanced Science and Technology of Sintering (pp. 61-66). Springer US. doi:10.1007/978-1-4419-8666-5_6

DOI
10.1007/978-1-4419-8666-5_6
Chapter

Fractals In Ceramic Structure

Mitić, V. V., Kocić, L. M., & Mitrović, I. Z. (1999). Fractals In Ceramic Structure. In Advanced Science and Technology of Sintering (pp. 397-402). Springer US. doi:10.1007/978-1-4419-8666-5_56

DOI
10.1007/978-1-4419-8666-5_56
Chapter

Modeling of intergranular impedance as a function of consolidation parameters

Nikolic, Z. S., Mitic, V. V., & Mitrovic, I. Z. (1999). Modeling of intergranular impedance as a function of consolidation parameters. In TELSIKS '99: 4TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, PROCEEDINGS, VOLS 1 AND 2 (pp. 673-676). Retrieved from https://www.webofscience.com/

Conference Paper

1997

BaTiO<inf>3</inf>-ceramics structure and consolidation process

Mitić, V. V., Kocić, L. M., & Mitrović, I. (1997). BaTiO<inf>3</inf>-ceramics structure and consolidation process. Key Engineering Materials, (136 PART 2), 924-927.

Journal article

Undated

Engineered tunnel-barrier terahertz rectifiers for optical nantennas

Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.

Presentation material

GeO <sub>x</sub>-Coated MXene Nanosheet-Based Synaptic Transistors for Enhanced Visual Perception Behaviors

Zhao, T., Liu, C., Zhao, C., Xu, W., Gao, H., Mitrovic, I. Z., . . . Zhao, C. (n.d.). GeO <sub>x</sub>-Coated MXene Nanosheet-Based Synaptic Transistors for Enhanced Visual Perception Behaviors.

Journal article