Publications
Selected publications
- Compositional tuning of atomic layer deposited MgZnO for thin film transistors (Journal article - 2014)
- Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article - 2014)
- Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Journal article - 2017)
- Enhanced switching stability in Ta<sub>2</sub>O<sub>5</sub> resistive RAM by fluorine doping (Journal article - 2017)
- Oxides for Rectenna Technology (Journal article - 2021)
- Analogue building blocks for neural-inspired circuits (Conference Paper - 2022)
- Potassium and Sodium Microdomains in Thin Astroglial Processes: A Computational Model Study (Journal article - 2018)
- A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density (Journal article - 2018)
- The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM (Journal article - 2017)
- Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias (Journal article - 2024)
2024
Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD
Yu, X., Lin, Y. -X., Mitrovic, I. Z., Hall, S., Liang, J. -H., Chao, D. -S., . . . Zhou, J. (2024). Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD. IEEE Open Journal of Power Electronics, 1-11. doi:10.1109/ojpel.2024.3490614
900 MHz RF Power Rectifier Based on Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Diode
Yu, X., Lin, Y. -X., Mitrovic, I. Z., Hall, S., Chao, D. -S., Liang, J. -H., . . . Zhou, J. (2024). 900 MHz RF Power Rectifier Based on Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Diode. In 2024 IEEE Wireless Power Technology Conference and Expo (WPTCE) (pp. 441-444). IEEE. doi:10.1109/wptce59894.2024.10557263
GaN-on-GaN PiN Diode Performance at Cryogenic Temperatures
Lin, Y., Chao, D. S., Liang, J. H., Hall, S., Zhou, J., & Mitrovic, I. (2024, May 15). GaN-on-GaN PiN Diode Performance at Cryogenic Temperatures. In EuroSOI-ULIS 2024. Athens.
TCAD Simulations of Single Event Effects in Quasi-vertical GaN Schottky Barrier Diodes with Guard Rings for Space Applications
Lin, Y. X., Chao, D. S., Liang, J. H., Hall, S., Zhou, J., & Mitrovic, I. (2024, May 15). TCAD Simulations of Single Event Effects in Quasi-vertical GaN Schottky Barrier Diodes with Guard Rings for Space Applications. In EuroSOI-ULIS 2024. Athens.
Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias
Lin, Y. -X., Chao, D. -S., Liang, J. -H., Shen, Y. -L., Huang, C. -F., Hall, S., & Mitrovic, I. Z. (2024). Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias. IEEE Transactions on Electron Devices, 71(9), 5296-5304. doi:10.1109/ted.2024.3433310
2023
Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height
Lin, Y. -X., Chao, D. -S., Liang, J. -H., Shen, Y. -L., Huang, C. -F., Hall, S., & Mitrovic, I. Z. (2023). Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height. SOLID-STATE ELECTRONICS, 207. doi:10.1016/j.sse.2023.108723
Electron affinity of metal oxide thin films of TiO<sub>2</sub>, ZnO, and NiO and their applicability in 28.3 THz rectenna devices
Tekin, S. B., Almalki, S., Finch, H., Vezzoli, A., O'Brien, L., Dhanak, V. R., . . . Mitrovic, I. Z. (2023). Electron affinity of metal oxide thin films of TiO<sub>2</sub>, ZnO, and NiO and their applicability in 28.3 THz rectenna devices. JOURNAL OF APPLIED PHYSICS, 134(8). doi:10.1063/5.0157726
Nano-rectennas for harnessing infrared energy
Tekin, S. (2023, July 31). Nano-rectennas for harnessing infrared energy.
2022
Analogue building blocks for neural-inspired circuits
Hall, S., & McDaid, L. (2022). Analogue building blocks for neural-inspired circuits. In Unknown Conference (pp. 71-88). River Publishers. doi:10.1201/9781003337546-4
<p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>
Noureddine, I. N., Sedghi, N., Wrench, J. S., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2022). <p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. doi:10.1016/j.sse.2022.108349
(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. ECS Meeting Abstracts, MA2022-01(19), 1076. doi:10.1149/ma2022-01191076mtgabs
(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. In ECS Transactions Vol. 108 (pp. 69-79). The Electrochemical Society. doi:10.1149/10802.0069ecst
2021
Applicability of Sc<sub>2</sub>O<sub>3</sub> versus Al<sub>2</sub>O<sub>3</sub> in MIM rectifiers for IR rectenna
Almalki, S., Tekin, S. B., Sedghi, N., Hall, S., & Mitrovic, I. Z. (2021). Applicability of Sc<sub>2</sub>O<sub>3</sub> versus Al<sub>2</sub>O<sub>3</sub> in MIM rectifiers for IR rectenna. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108082
Fabrication and modelling of MInM diodes with low turn-on voltage
Noureddine, I. N., Sedghi, N., Wrench, J., Chalker, P., Mitrovic, I. Z., & Hall, S. (2021). Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108053
Oxides for Rectenna Technology
Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218
Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas
Tekin, S., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2021). Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics. doi:10.1016/j.sse.2021.108096
2020
Feasibility of a silicon thin film transistor-based aptamer sensor for COVID-19 detection
Effect of Electron Affinity on ALD MI2M Resonant Tunneling Rectifiers
Tekin, S., Sedghi, N., Hall, S., Chalker, P., & Mitrovic, I. (2020, December 16). Effect of Electron Affinity on ALD MI2M Resonant Tunneling Rectifiers. In J. Robertson (Ed.), 51st IEEE Semiconductor Interface Specialists Conference (pp. 2 pages). On-line.
Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting
Tekin, S. B., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2020). Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365388
Band alignments of sputtered dielectrics on GaN
Supardan, S. N., Das, P., Major, J. D., Hannah, A., Zaidi, Z. H., Mahapatra, R., . . . Mitrovic, I. Z. (2020). Band alignments of sputtered dielectrics on GaN. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(7). doi:10.1088/1361-6463/ab5995
2019
Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique
Fang, Y., Zhao, C., Hall, S., Mitrovic, I. Z., Xu, W., Yang, L., . . . Zhao, C. (2019). Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique. Radiation Physics and Chemistry. doi:10.1016/j.radphyschem.2019.108644
Bias-stress stability and radiation response of solution-processed AlO<sub>x</sub> dielectrics investigated by on-site measurements
Fang, Y. X., Zhao, C., Mitrovic, I. Z., Hall, S., Yang, L., & Zhao, C. Z. (2019). Bias-stress stability and radiation response of solution-processed AlO<sub>x</sub> dielectrics investigated by on-site measurements. In MICROELECTRONIC ENGINEERING Vol. 217. doi:10.1016/j.mee.2019.111113
Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements
Fang, Y. X., Zhao, C., Mitrovic, I. Z., Hall, S., Yang, L., & Zhao, C. C. (n.d.). Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements. Microelectronic Engineering. doi:10.1016/j.mee.2019.111113
Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric
Shen, Z., Qi, Y., Mitrovic, I. Z., Zhao, C., Hall, S., Yang, L., . . . Zhao, C. (2019). Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10(7). doi:10.3390/mi10070446
Band alignment and electrical study of Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs
Supardan, S. N., Das, P., Major, J., Hannah, A., Zaidi, Z. H., Cai, Y., . . . Mitrovic, I. Z. (2019, July 27). Band alignment and electrical study of Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In 6th International Conference on Nanotechnology, Nanomaterials and Thin Films for Energy Application – NANOENERGY 2019. Kuala Lumpur, Malaysia.
Plasma-Enhanced Combustion-Processed Al<sub>2</sub>O<sub>3</sub> Gate Oxide for In<sub>2</sub>O<sub>3</sub> Thin Film Transistors
Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . Cao, Y. X. (2019). Plasma-Enhanced Combustion-Processed Al<sub>2</sub>O<sub>3</sub> Gate Oxide for In<sub>2</sub>O<sub>3</sub> Thin Film Transistors. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790939
Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric
Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . Yu, S. C. (2019). Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from https://www.webofscience.com/
Calcium Microdomain Formation at the Perisynaptic Cradle due to NCX Reversal: A Computational Study
Wade, J. J., Breslin, K., Kong-Fatt, W. -L., Harkin, J., Flanagan, B., Van Zalinge, H., . . . McDaid, L. J. (2019). Calcium Microdomain Formation at the Perisynaptic Cradle due to NCX Reversal: A Computational Study. Frontiers in Cellular Neuroscience, 13. doi:10.3389/fncel.2019.00185
Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation
Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . Yu, S. C. (2019). Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from https://www.webofscience.com/
Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route
Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . Cao, Y. X. (2019). Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from https://www.webofscience.com/
2018
Fan-in analysis of a leaky integrator circuit using charge transfer synapses
Dowrick, T., McDaid, L., & Hall, S. (2018). Fan-in analysis of a leaky integrator circuit using charge transfer synapses. NEUROCOMPUTING, 314, 78-85. doi:10.1016/j.neucom.2018.06.065
The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique
Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J. F., Marsland, J., . . . Robertson, J. (2018). The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39(7), 955-958. doi:10.1109/LED.2018.2833149
Atomic layer deposition zinc oxide devices for transparent electronics
Shaw, A. P., & Mitrovic, I. Z. (2018, June 25). Atomic layer deposition zinc oxide devices for transparent electronics.
Resonant tunnelling nanostructures for THz energy harvesting
Nemr Noureddine, I. (2018, June 22). Resonant tunnelling nanostructures for THz energy harvesting.
Ionic microdomain formation at the perisynaptic cradle
Breslin, K., Wade, J. J., Wong-Lin, K., Harkin, J., Flanagan, B., Van Zalinge, H., . . . McDaid, L. J. (2018, July 7). Ionic microdomain formation at the perisynaptic cradle. In 11th FENS Forum of Neuroscience. Berlin.
Potassium and Sodium Microdomains in Thin Astroglial Processes: A Computational Model Study
Breslin, K., Wade, J. J., Wong-Lin, K. F., Harkin, J., Flanagan, B., Van Zalinge, H., . . . McDaid, L. J. (2018). Potassium and Sodium Microdomains in Thin Astroglial Processes: A Computational Model Study. PLoS Computational Biology, 14(5). doi:10.1371/journal.pcbi.1006151
Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study
Supardan, S. N., Das, P., Shaw, A. P., Major, J. D., Valizadeh, R., Hannah, A., . . . Mitrovic, I. Z. (2018, June 11). Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study. In 20th Workshop on Dielectrics in Microelectronics - Wodim 2018. Berlin, Germany.
A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
Jin, J., Zhang, J., Shaw, A., Kudina, V., Mitrovic, I., Wrench, J. S., . . . Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6). doi:10.1088/1361-6463/aaa4a2
Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures
Mitrovic, I. Z., Weerakkody, D. A. D. C., Sedghi, N., Ralph, J. F., Hall, S., Dhanak, V. R., . . . Beeby, S. (2018). Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112, 5 pages. doi:10.1063/1.4999258
2017
Enhanced switching stability in Ta<sub>2</sub>O<sub>5</sub> resistive RAM by fluorine doping
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111(9). doi:10.1063/1.4991879
Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 178-181). doi:10.1016/j.mee.2017.04.010
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 213-216). doi:10.1016/j.mee.2017.05.043
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178, 178-181. doi:10.1016/j.mee.2017.04.010
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043
Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N
Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902-1-102902-4. doi:10.1063/1.4978033
Observation of the suppressed decay Λ b 0 → pπ − μ + μ −
collaboration, L., Aaij, R., Adeva, B., Adinolfi, M., Ajaltouni, Z., Akar, S., . . . Zucchelli, S. (n.d.). Observation of the suppressed decay Λ b 0 → pπ − μ + μ −. JHEP04(2017)029. doi:10.1007/JHEP04(2017)029
Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284
Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes
Noureddine, I. N., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2017). Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35(1). doi:10.1116/1.4974219
2016
Wider Memory Window in Ta2O5 RRAM by Doping
Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.
Atomic layer deposition of Nb-doped ZnO for thin film transistors
Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., . . . Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109(22). doi:10.1063/1.4968194
ZnO MESFETS for application to Intelligent Windows
Hall, S., Chalker, P. R., & Mitrovic, I. (2016). ZnO MESFETS for application to Intelligent Windows. Impact, 2016(2), 49-51. doi:10.21820/23987073.2016.2.49
Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling
Hakim, M. M. A., de Groot, C. H., Hall, S., & Ashburn, P. (2016). Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling. JOURNAL OF COMPUTATIONAL ELECTRONICS, 15(3), 839-849. doi:10.1007/s10825-016-0853-y
Effect of Lightly Doped Drain on the Electrical Characteristics of CMOS Compatible Vertical MOSFETs
Rubel, D. H., Sun, K., Hall, S., Ashburn, P., & Hakim, M. M. A. (2015). Effect of Lightly Doped Drain on the Electrical Characteristics of CMOS Compatible Vertical MOSFETs. In 2015 INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRICAL ENGINEERING (ICAEE) (pp. 344-347). Retrieved from https://www.webofscience.com/
Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications
Nemr Noureddine, I., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2016). Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications. In 19th Workshop on Dielectrics in Microelectronics –WODIM. Catania, Italy.
Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping
Brunell, I., Sedghi, N., Dawson, K., Hall, S., & Chalker, P. R. (2016, July 24). Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping. In 16th International Atomic Layer Deposition Conference. Dublin, Ireland.
Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack
Mitrovic, I. Z., Supardan, S. N., Hesp, D., Dhanak, V. R., Hall, S., Schamm-Chardon, S., . . . Ostling, M. (2016). Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. In 19th Workshop on Dielectrics in Microelectronics –WODIM 2016. Catania, Italy.
Nb doped ZnO with enhanced physical and electrical properties for TFTs
Wrench, J. S., Chalker, P. R., Jin, J., Shaw, A. S., Mitrovic, I. Z., & Hall, S. (2016, July 24). Nb doped ZnO with enhanced physical and electrical properties for TFTs. In 16th International Atomic Layer Deposition Conference. Dublin, Ireland.
Design of an All-Dielectric Double Barrier Resonant Tunneling Diode for THz Energy Harvesting
Sedghi, N., Mitrovic, I. Z., Ralph, J. F., Chalker, P. R., & Hall, S. (2016, July 27). Design of an All-Dielectric Double Barrier Resonant Tunneling Diode for THz Energy Harvesting. In 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016. Liverpool, UK.
Experimental tunnel-barrier rectifiers for IR energy harvesting
Weerakkody, D. A. D., Sedghi, N., Mitrovic, I. Z., Hall, S., Wrench, J., Chalker, P. R., . . . Beeby, S. (2016, July 27). Experimental tunnel-barrier rectifiers for IR energy harvesting. In 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - NANOENERGY 2016. University of Liverpool.
High speed rectifiers for coupling efficiency enhancement in THz rectenna scavengers
Nemr Noureddine, I., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2016, July 27). High speed rectifiers for coupling efficiency enhancement in THz rectenna scavengers. In 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016. University of Liverpool.
Low Voltage Rectification in Resonant Tunneling Diodes for Use in THz Energy Harvesting
Sedghi, N., Mitrovic, I. Z., Ralph, J. F., Chalker, P. R., & Hall, S. (2016, July 27). Low Voltage Rectification in Resonant Tunneling Diodes for Use in THz Energy Harvesting. In 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016. Liverpool University.
Rare-earth oxide interfacial layer for sub-nm EOT CMOS technology
Supardan, S., Mitrovic, I. Z., Hesp, D., Dhanak, V. R., Hall, S., Schamm-Chardon, S., . . . Ostling, M. (2016, July 27). Rare-earth oxide interfacial layer for sub-nm EOT CMOS technology. In 3rd International Conference on Nanotechnology, Nanomaterials and Thin Films for Energy Applications. University of Liverpool.
Tunnel-Barrier Rectifiers for Optical Nantennas
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecst
3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM
Sedghi, N., Brunell, I., Potter, R., Hall, S., Dawson, K., & Chalker, P. R. (2016, June 27). 3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM. In 19th Workshop on Dielectrics in Microelectronics –WODIM. Catania,Italy.
Enhanced switching in Ta2O5 RRAM by fluorine doping
Sedghi, N., Brunell, I., Potter, R., Hall, S., Dawson, K., & Chalker, P. R. (2016, June 27). Enhanced switching in Ta2O5 RRAM by fluorine doping. In 19th Workshop on Dielectrics in Microelectronics –WODIM. Catania, Italk.
(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. ECS Meeting Abstracts, MA2016-01(16), 1011. doi:10.1149/ma2016-01/16/1011
Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks
Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2016). Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks. Solar Energy Materials and Solar Cells, 147, 327-333. doi:10.1016/j.solmat.2015.10.007
Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from https://www.webofscience.com/
Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films
Jin, J., Zhang, J., Kemal, R. E., Luo, Y., Bao, P., Althobaiti, M., . . . Song, A. (2016). Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673, 54-59. doi:10.1016/j.jallcom.2016.02.215
2015
Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process
Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2015). Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process. DATA IN BRIEF, 5, 926-928. doi:10.1016/j.dib.2015.10.026
Hafnia and alumina on sulphur passivated germanium
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017
Hafnia and alumina on sulphur passivated germanium
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Poster session presented at the meeting of Unknown Conference. Retrieved from https://www.webofscience.com/
Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors
Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from https://www.webofscience.com/
Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Noureddine, I. N., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147, 298-301. doi:10.1016/j.mee.2015.04.110
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecst
Characterisation and Modelling of Mg Doped ZnO TFTs
Shaw, A., Gao, C., Jin, J. D., Mitrovic, I. Z., & Hall, S. (2015). Characterisation and Modelling of Mg Doped ZnO TFTs. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 153-156). Retrieved from https://www.webofscience.com/
Conduction mechanisms in Al-Ta<sub>2</sub>O<sub>5</sub>-Al<sub>2</sub>O<sub>3</sub>-Al rectifiers
Weerakkody, A. D., Sedghi, N., Zhan, X., Mitrovic, I. Z., & Hall, S. (2015). Conduction mechanisms in Al-Ta<sub>2</sub>O<sub>5</sub>-Al<sub>2</sub>O<sub>3</sub>-Al rectifiers. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 133-136). Retrieved from https://www.webofscience.com/
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993
Atomic-layer deposited thulium oxide as a passivation layer on germanium
Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121
Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110
Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.
2014
Compositional tuning of atomic layer deposited MgZnO for thin film transistors
Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105(20). doi:10.1063/1.4902389
Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties
Engstrom, O., Przewlocki, H. M., Mitrovic, I. Z., & Hall, S. (2014). Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties. In PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) (pp. 369-372). Retrieved from https://www.webofscience.com/
Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition
King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174
(Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2014). (Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology. ECS Meeting Abstracts, MA2014-01(36), 1357. doi:10.1149/ma2014-01/36/1357
Interface Engineering Routes for a Future CMOS Ge-based Technology
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecst
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091
Non-parabolicity and band gap re-normalisation in Si doped ZnO
Treharne, R. E., Phillips, L. J., Durose, K., Weerakkody, A., Mitrovic, I. Z., & Hall, S. (2014). Non-parabolicity and band gap re-normalisation in Si doped ZnO. JOURNAL OF APPLIED PHYSICS, 115(6). doi:10.1063/1.4863875
Non-parabolicity and band gap re-normalisation in Si doped ZnO
Treharne, R. E., Phillips, L. J., Durose, K., Weerakkody, A., Mitrovic, I. Z., & Hall, S. (2014). Non-parabolicity and band gap re-normalisation in Si doped ZnO. Journal of Applied Physics, 115(6). doi:10.1063/1.4863875
Energy Distribution of Positive Charges in Al2O3GeO2/Ge pMOSFETs
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Mitard, J., . . . Chalker, P. R. (2014). Energy Distribution of Positive Charges in Al2O3GeO2/Ge pMOSFETs. IEEE Electron Device Letters, 35(2), 160-162. doi:10.1109/LED.2013.2295516
A compact spike-timing-dependent-plasticity circuit for floating gate weight implementation
Smith, A. W., McDaid, L. J., & Hall, S. (2014). A compact spike-timing-dependent-plasticity circuit for floating gate weight implementation. NEUROCOMPUTING, 124, 210-217. doi:10.1016/j.neucom.2013.07.007
'Hafnia on sulphur passivated germanium'
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I., Hall, S., & Chalker, P. (2014). 'Hafnia on sulphur passivated germanium'. In 13th European surface science Conference (pp. 1-2). Aveiro: EVC13.
'Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna'
Sedghi, N., Mitrovic, I. Z., Ralph, J. F., & Hall, S. (2014). 'Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna'. In WODIM (pp. 2). Cork: Wodim.
Characterization of negative bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Zheng, X. F., . . . Chalker, P. R. (2014). Characterization of negative bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack. IEEE Transactions on Electron Devices, 61(5), 1307-1314. doi:10.1109/TED.2014.2314178
Energy Harvesting Using THz Electronics
Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C. C., Huang, Y., & Ralph, J. F. (2014). Energy Harvesting Using THz Electronics. In FUNCTIONAL NANOMATERIALS AND DEVICES FOR ELECTRONICS, SENSORS AND ENERGY HARVESTING (pp. 241-265). doi:10.1007/978-3-319-08804-4_12
Erratum to: Energy Harvesting Using THz Electronics
Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C., Huang, Y., & Ralph, J. F. (2014). Erratum to: Energy Harvesting Using THz Electronics. In Engineering Materials (pp. E1). Springer International Publishing. doi:10.1007/978-3-319-08804-4_21
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting
Nazarov, A., Balestra, F., Kilchytska, V., & Flandre, D. (Eds.) (2014). Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. In . Springer International Publishing. doi:10.1007/978-3-319-08804-4
2013
Interface engineering of Ge using thulium oxide: Band line-up study
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. Microelectronic Engineering, 109, 204-207. doi:10.1016/j.mee.2013.03.160
Analysis of electron capture at oxide traps by electric field injection
Engstrom, O., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Analysis of electron capture at oxide traps by electric field injection. APPLIED PHYSICS LETTERS, 102(21). doi:10.1063/1.4807845
A simple programmable axonal delay scheme for spiking neural networks
Dowrick, T., Hall, S., & McDaid, L. (2013). A simple programmable axonal delay scheme for spiking neural networks. Neurocomputing, 108, 79-83. doi:10.1016/j.neucom.2012.12.004
Interface engineering of Ge using thulium oxide: Band line-up study
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. In MICROELECTRONIC ENGINEERING Vol. 109 (pp. 204-207). doi:10.1016/j.mee.2013.03.160
Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition
Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032
Towards understanding hole traps and NBTI of Ge/GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> structure
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Duan, M., Zhang, W., . . . Chalker, P. (2013). Towards understanding hole traps and NBTI of Ge/GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> structure. MICROELECTRONIC ENGINEERING, 109, 43-45. doi:10.1016/j.mee.2013.03.018
Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states
Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544
Bound states within the notch of the HfO2/GeO2/Ge stack
Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO2/GeO2/Ge stack. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(2). doi:10.1116/1.4794378
Gate Stacks
Engström, O., Mitrovic, I. Z., Hall, S., Hurley, P. K., Cherkaoui, K., Monaghan, S., . . . Lemme, M. C. (2013). Gate Stacks. In Unknown Book (pp. 23-67). Wiley. doi:10.1002/9781118621523.ch2
'A combinatorial approach to the rapid development of transparent conducting oxides'
Treharne, R. E., Phillips, L. J., Durose, K., Weerakkody, D. A., Mitrovic, I., & Hall, S. (2013). 'A combinatorial approach to the rapid development of transparent conducting oxides'. In IEEE (Ed.), Semiconductor Interface Specialist Conference (pp. 1-2). Arlington, VA: SISC.
'Interface engineering of Ge using thulium oxide: band line-up study'
Mitrovic, I., Althobaiti, M., Werrakkody, A. D., Sedghi, N., Hall, S., Dhanak, V., . . . Ostling, M. (2013). 'Interface engineering of Ge using thulium oxide: band line-up study'. In Insulating Films on Semiconductors (pp. 70-71). Cracow: Elsevier.
'Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition'
Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I., Dhanak, V., Chalker, P. R., & Hall, S. (2013). 'Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition'. In Insulating Films on Semiconductors (pp. 84-85). Cracow: Elsevier.
'Solar energy harvesting using THz electronics.' (Invited)
Hall, S., Sedghi, N., Mitrovic, I., Ralph, J., & Huang, Y. (2013). 'Solar energy harvesting using THz electronics.' (Invited). In F. Balestra, & A. N. Nazarov (Eds.), Functional Nanomaterials and Devices (pp. 2). Kyiv: TBA.
'Towards Rectennas for Solar Energy Harvesting'
Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., & Hall, S. (2013). 'Towards Rectennas for Solar Energy Harvesting'. In ESSDERC (pp. 4). Bucharest: CUP.
Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack
Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 31. doi:10.1116/1.4794378
Towards Rectennas for Solar Energy Harvesting
Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., & Hall, S. (2013). Towards Rectennas for Solar Energy Harvesting. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) (pp. 131-134). Retrieved from https://www.webofscience.com/
2012
Synaptic weight modification and storage in hardware neural networks
Smith, A. (2012, December 20). Synaptic weight modification and storage in hardware neural networks. (PhD Thesis, University of Liverpool).
Drive Current improvement in vertical MOSFETS using hydrogen anneal
Hakim, M. M. A., Tan, L., Abuelgasim, A., de-Groot, C. H., Redman.-White, W., Hall, S., & Ashburn, P. (2012). Drive Current improvement in vertical MOSFETS using hydrogen anneal. In 2012 7th International Conference on Electrical and Computer Engineering (pp. 217-220). IEEE. doi:10.1109/icece.2012.6471524
Silicon-based dynamic synapse with depressing response.
Dowrick, T., Hall, S., & McDaid, L. J. (2012). Silicon-based dynamic synapse with depressing response.. IEEE transactions on neural networks and learning systems, 23(10), 1513-1525. doi:10.1109/tnnls.2012.2211035
Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stack
Benbakhti, B., Zhang, J. F., Ji, Z., Zhang, W., Mitard, J., Kaczer, B., . . . Chalker, P. (2012). Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stack. IEEE ELECTRON DEVICE LETTERS, 33(12), 1681-1683. doi:10.1109/LED.2012.2218565
Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub>
Mitrovic, I. Z., Przewlocki, H. M., Piskorski, K., Simutis, G., Dhanak, V. R., Sedghi, N., & Hall, S. (2012). Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub>. THIN SOLID FILMS, 520(23), 6959-6962. doi:10.1016/j.tsf.2012.07.082
Influence of interlayer properties on the characteristics of high-<i>k</i> gate stacks
Engstrom, O., Mitrovic, I. Z., & Hall, S. (2012). Influence of interlayer properties on the characteristics of high-<i>k</i> gate stacks. SOLID-STATE ELECTRONICS, 75, 63-68. doi:10.1016/j.sse.2012.04.042
On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks
Mitrovic, I. Z., Hall, S., Sedghi, N., Simutis, G., Dhanak, V. R., Bailey, P., . . . Schubert, J. (2012). On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks. JOURNAL OF APPLIED PHYSICS, 112(4). doi:10.1063/1.4746790
Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure
Uchino, T., Gili, E., Tan, L., Buiu, O., Hall, S., & Ashburn, P. (2012). Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure. Semiconductor Science and Technology, 27(6), 062002. doi:10.1088/0268-1242/27/6/062002
Evaluating the generalisation capability of a CMOS based synapse
Ghani, A., McDaid, L., Belatreche, A., Hall, S., Huang, S., Marsland, J., . . . Smith, A. (2012). Evaluating the generalisation capability of a CMOS based synapse. Neurocomputing, 83, 188-197. doi:10.1016/j.neucom.2011.12.010
'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'
Sedghi, N., Dowrick, T., Mitrovic, I., & Hall, S. (2012). 'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique'
Sedghi, N., Dowrick, T., Engström, O., Mitrovic, I., & Hall, S. (2012). 'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique'. In Workshop on Dielectrics in Microelectronics (pp. 2). Dresden: WODIM.
'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'
Sedghi, N., Ralph, J. F., Mitrovic, I., & Hall, S. (2012). 'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'Ce doped hafnium oxide on silicon'
Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'Electrical detection of a single DNA-molecule using fixed electrodes'
van Zalinge, H., Zurita, M., Hall, S., & Nicolau, D. V. (2012). 'Electrical detection of a single DNA-molecule using fixed electrodes'. In 22nd anniversary World Congress on Biosensors (pp. 2). Mexico: WCB.
'Highlights - Improvement in 3D Device Performance'
Uchino, T., Gili, E., Tan, L., Buiu, O., Hall, S., & Ashburn, P. (2012). 'Highlights - Improvement in 3D Device Performance'. Europhysics News, 43(4), 2. Retrieved from http://www.europhysicsnews.org/
2011
'Plasma of Arc Discharge in Water for the Formation of Diverse Nanostructures Dependent on the Anode Material.'
Delaportas, D., Svarnas, P., Alexandrou, I., & Hall, S. (2011). 'Plasma of Arc Discharge in Water for the Formation of Diverse Nanostructures Dependent on the Anode Material.'. IEEE Transactions on Plasma Science,, 39(11), 2628-2629.
Plasma of Arc Discharge in Water for the Formation of Diverse Nanostructures Dependent on the Anode Material
Delaportas, D., Svarnas, P., Alexandrou, I., & Hall, S. (2011). Plasma of Arc Discharge in Water for the Formation of Diverse Nanostructures Dependent on the Anode Material. IEEE Transactions on Plasma Science, 39(11), 2628-2629. doi:10.1109/tps.2011.2159274
Evaluating the training dynamics of a CMOS based synapse
Ghani, A., McDaid, L. J., Belatreche, A., Kelly, P., Hall, S., Dowrick, T., . . . Smith, A. (2011). Evaluating the training dynamics of a CMOS based synapse. In The 2011 International Joint Conference on Neural Networks (pp. 1162-1168). IEEE. doi:10.1109/ijcnn.2011.6033355
A wide linear range OTA-C filter for bionic ears
Hasan, S. A., Hall, S., & Marsland, J. S. (2011). A wide linear range OTA-C filter for bionic ears. In 2011 3rd Computer Science and Electronic Engineering Conference (CEEC). IEEE. doi:10.1109/ceec.2011.5995818
A proposed sub-threshold OTA-C filter for Hearing Aids
Hasan, S. A., Hall, S., & Marsland, J. S. (2011). A proposed sub-threshold OTA-C filter for Hearing Aids. In 2011 IEEE 9th International New Circuits and systems conference (pp. 414-417). IEEE. doi:10.1109/newcas.2011.5981258
Design of Low Power Electronic Circuits for Bio-Medical Applications
Hasan, S. A. (2011, September 1). Design of Low Power Electronic Circuits for Bio-Medical Applications.
Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks
Mitrovic, I. Z., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., Dhanak, V. R., . . . Schubert, J. (2011). Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks. MICROELECTRONIC ENGINEERING, 88(7), 1495-1498. doi:10.1016/j.mee.2011.03.051
Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique
Sedghi, N., Mitrovic, I. Z., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35(4), 531-543. doi:10.1149/1.3572303
Improved Drive Current in RF Vertical MOSFETS Using Hydrogen Anneal
Hakim, M. M. A., Abuelgasim, A., Tan, L., de Groot, C. H., Redman-White, W., Hall, S., & Ashburn, P. (2011). Improved Drive Current in RF Vertical MOSFETS Using Hydrogen Anneal. IEEE Electron Device Letters, 32(3), 279-281. doi:10.1109/led.2010.2101042
Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the 3-Pulse CV Technique
Sedghi, N., Mitrovic, I., Lopes, J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the 3-Pulse CV Technique. ECS Meeting Abstracts, MA2011-01(22), 1393. doi:10.1149/ma2011-01/22/1393
Biologically motivated circuits for third generation neural networks
Dowrick, T. (2011, January 10). Biologically motivated circuits for third generation neural networks.
<i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique
Sedghi, N., Mitrovic, I. Z., Hall, S., Lopes, J. M. J., & Schubert, J. (2011). <i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3533267
'A Wide Linear Range OTA-C Filter for Bionic Ears.'
Hasan, S. A., Marsland, J. S., & Hall, S. (2011). 'A Wide Linear Range OTA-C Filter for Bionic Ears.'. In 3rd Computer Science and Electronic Engineering Conference (pp. 79-81). Essex: Essex.
'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'
Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. Jnl. Vac. Sci. B, 29(1), 1-6. Retrieved from http://avspublications.org/
'Evaluating the Training Dynamic of a CMOS based Synapse'
Ghani, A., McDaid, L. J., Belatreche, A., Hall, S., Dowrick, T., Huang, S., . . . Smith, A. (2011). 'Evaluating the Training Dynamic of a CMOS based Synapse'. In International Joint Conference on Neural Networks, (pp. 123-130). California: IEEE.
'LaGeOx as a route towards effective passivation of Ge interface.'
Mitrovic, I., Hall, S., Sedghi, N., Spencer, P., Dhanak, V. R., Bailey, P., . . . Tsoutsou, A. (2011). 'LaGeOx as a route towards effective passivation of Ge interface.'. In IEEE (Ed.), Semiconductor Insulator Specialist Conference (SISC) (pp. 45-46). Arlington: IEEE.
'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'
Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. Jnl. Vac. Sci. B, 29(1), 1-8. Retrieved from http://avspublications.org/
'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks '
Mitrovic, I., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., & Dhanak, V. (2011). 'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks '. In S. Cristoloveneau (Ed.), Insulating films on Semionductors (pp. 10-13). Grenoble, France: Elsevier.
A Proposed Sub-Threshold OTA-C for Hearing Aids
Hasan, S., & Hall, S. (2011). A Proposed Sub-Threshold OTA-C for Hearing Aids. In NewCas 2011 (pp. 100-102). Bordeaux, France: xxx.
Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization
Sedghi, N., Davey, W., Mitrovic, I. Z., & Hall, S. (2011). Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3532823
2010
Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
Engström, O., Raeissi, B., Piscator, J., Mitrovic, I. Z., Hall, S., Gottlob, H. D. B., . . . Cherkaoui, K. (n.d.). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology, (4), 81-90. doi:10.26636/jtit.2010.4.1115
Self-Aligned Silicidation of Surround Gate Vertical MOSFETs for Low Cost RF Applications
Hakim, M. M. A., Tan, L., Abuelgasim, A., Mallik, K., Connor, S., Bousquet, A., . . . Ashburn, P. (2010). Self-Aligned Silicidation of Surround Gate Vertical MOSFETs for Low Cost RF Applications. IEEE Transactions on Electron Devices, 57(12), 3318-3326. doi:10.1109/ted.2010.2082293
'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'
Sedghi, N., Davey, W., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2010). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. In Workshop on Dielectrics in Microelectronics (pp. 57). Bratislava: Wodim.
'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'
Sedghi, N., Davey, W., Mitrovic, I., & Hall, S. (2010). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. In Workshop on Dielectrics in Microelectronics (pp. 127). Bratislava: ECS.
Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique
Sedghi, N., Davey, W. M., Mitrovic, I., Hall, S., Lopes, J. M. J., & Schubert, J. (2010). Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique. In SISC (pp. 2). San Diego: IEEE.
Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
Engström, O., Raeissi, B., Piscator, J., Mitrovic, I. Z., Hall, S., Gottlob, H. D. B., . . . Cherkaoui, K. (n.d.). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology, (1), 10-19. doi:10.26636/jtit.2010.1.1023
2009
Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond
Mitrovic, I. Z., & Hall, S. (n.d.). Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond. Journal of Telecommunications and Information Technology, (4), 560. doi:10.26636/jtit.2009.4.969
A self-aligned silicidation technology for surround-gate vertical MOSFETS
Hakim, M. M. A., Mallik, K., de-Groot, C. H., Redman.-White, W., Ashburn, P., Tan, L., & Hall, S. (2009). A self-aligned silicidation technology for surround-gate vertical MOSFETS. In 2009 Proceedings of the European Solid State Device Research Conference (pp. 363-366). IEEE. doi:10.1109/essderc.2009.5331579
Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurement
Tan, L., Hakim, M. M. A., Connor, S., Bousquet, A., Redman-White, W., Ashburn, P., & Hall, S. (2009). Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurement. In 2009 10th International Conference on Ultimate Integration of Silicon (pp. 165-168). IEEE. doi:10.1109/ulis.2009.4897563
Editorial
Ashburn, P., & Hall, S. (2009). Editorial. Solid-State Electronics, 53(7), 675. doi:10.1016/j.sse.2009.03.015
Estimate of dielectric density using spectroscopic ellipsometry
Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. Microelectronic Engineering, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027
Estimate of dielectric density using spectroscopic ellipsometry
Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. MICROELECTRONIC ENGINEERING, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027
Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation
Hakim, M. M. A., Tan, L., Buiu, O., Redman-White, W., Hall, S., & Ashburn, P. (2009). Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation. Solid-State Electronics, 53(7), 753-759. doi:10.1016/j.sse.2009.02.016
Preface
Robertson, J., & Hall, S. (2009). Preface. Microelectronic Engineering, 86(7-9), 1519. doi:10.1016/j.mee.2009.03.126
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084
Substitutional C effect on generation lifetime in MBE-grown SiGeC layers
Mitrovic, I. Z., & Hall, S. (2009). Substitutional C effect on generation lifetime in MBE-grown SiGeC layers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24(2). doi:10.1088/0268-1242/24/2/025009
'A Reconfigurable and Biologically Inspired Paradigm for Computation using Networks-on-chip and Spiking Neural Networks'
Harkin, J., Morgan, F., McDaid, L. J., Hall, S., McGinley, B., & Cawley, S. (2009). 'A Reconfigurable and Biologically Inspired Paradigm for Computation using Networks-on-chip and Spiking Neural Networks'. Int. Jnl of Reconfigurable Computing, 13 pages.
'Characterization of CMOS Compatible Vertical MOSFETs with New Architectures through EKV Parameters Extraction and RF Measurement'
Tan, L., Hakim, M. M. A., Connor, S., Bousquet, A., Redman-White, W., Ashburn, P., & Hall, S. (2009). 'Characterization of CMOS Compatible Vertical MOSFETs with New Architectures through EKV Parameters Extraction and RF Measurement'. In ULIS (pp. 3 pages). Italy: X.
'Estimate of Dielectric Density using Spectroscopic Ellipsometry'
Davey, W., Buiu, O., Mitrovic, I., Werner, M., Hall, S., & Chalkner, P. (2009). 'Estimate of Dielectric Density using Spectroscopic Ellipsometry'. In J. R. Robertson, & S. Hall (Eds.), INFOS (pp. 4 pages). Cambridge UK: Elsevier. doi:10.1016/j.mee.2009.03.027
'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond'
Mitrovic, I., & Hall, S. (2009). 'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond'. Jnl. Telcomms. & IT, 4, 51-60. Retrieved from http://www.nit.eu/czasopisma/JTIT/2009/4/51.pdf
'Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics'
Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I., . . . Newcomb, S. B. (2009). 'Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics'. In J. R. Robertson, & S. Hall (Eds.), INFOS (pp. 4 pages). Cambridge, UK: Elsevier.
Breakdown and degradation of ultrathin Hf-based (HfO<sub>2</sub>)<i><sub>x</sub></i>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> gate oxide films
Uppal, H. J., Mitrovic, I. Z., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2009). Breakdown and degradation of ultrathin Hf-based (HfO<sub>2</sub>)<i><sub>x</sub></i>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> gate oxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 443-447. doi:10.1116/1.3025822
Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing
Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904
Leakage current effects on <i>C</i>-<i>V</i> plots of high-<i>k</i> metal-oxide-semiconductor capacitors
Lu, Y., Hall, S., Tan, L. Z., Mitrovic, I. Z., Davey, W. M., Raeissi, B., . . . Lemme, M. C. (2009). Leakage current effects on <i>C</i>-<i>V</i> plots of high-<i>k</i> metal-oxide-semiconductor capacitors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 352-355. doi:10.1116/1.3025910
2008
Feasibility of novel deca-nanometer vertical MOSFETs for low-cost radio frequency Circuit applications
Tan, L. (2008, December 1). Feasibility of novel deca-nanometer vertical MOSFETs for low-cost radio frequency Circuit applications.
Programmable architectures for large-scale implementations of spiking neural networks
Harkin, J., McDaid, L., Hall, S., Dowrick, T., & Morgan, F. (2008). Programmable architectures for large-scale implementations of spiking neural networks. In IET Irish Signals and Systems Conference (ISSC 2008) (pp. 374-379). IEE. doi:10.1049/cp:20080691
A programmable facilitating synapse device
Yajie Chen., McDaid, L., Hall, S., & Kelly, P. (2008). A programmable facilitating synapse device. In 2008 IEEE International Joint Conference on Neural Networks (IEEE World Congress on Computational Intelligence) (pp. 1615-1620). IEEE. doi:10.1109/ijcnn.2008.4634013
Chemical and optical profiling of ultra thin high-k dielectrics on silicon
Bernardini, S., MacKenzie, M., Buiu, O., Bailey, P., Noakes, T. C. Q., Davey, W. M., . . . Hall, S. (2008). Chemical and optical profiling of ultra thin high-k dielectrics on silicon. Thin Solid Films, 517(1), 459-461. doi:10.1016/j.tsf.2008.08.048
Ellipsometric analysis of mixed metal oxides thin films
Buiu, O., Davey, W., Lu, Y., Mitrovic, I. Z., & Hall, S. (2008). Ellipsometric analysis of mixed metal oxides thin films. THIN SOLID FILMS, 517(1), 453-455. doi:10.1016/j.tsf.2008.08.119
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Raeissi, B., Piscator, J., Engström, O., Hall, S., Buiu, O., Lemme, M. C., . . . Osten, H. J. (2008). High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy. Solid-State Electronics, 52(9), 1274-1279. doi:10.1016/j.sse.2008.04.005
A generalised methodology for oxide leakage current metric
Engstrom, O., Piscator, J., Raeissi, B., Hurley, P. K., Cherkaoui, K., Hall, S., . . . Gottlob, H. D. B. (2008). A generalised methodology for oxide leakage current metric. In 2008 9th International Conference on Ultimate Integration of Silicon (pp. 167-170). IEEE. doi:10.1109/ulis.2008.4527165
Series resistance in vertical MOSFETs with reduced drain/source overlap capacitance
Tan, L., Hall, S., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P., & Redman-White, W. (2008). Series resistance in vertical MOSFETs with reduced drain/source overlap capacitance. In 2008 9th International Conference on Ultimate Integration of Silicon (pp. 187-190). IEEE. doi:10.1109/ulis.2008.4527170
Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect
Zhao, C. Z., Zhang, J. F., Chang, M. H., Peaker, A. R., Hall, S., Groeseneken, G., . . . Heyns, M. (2008). Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect. IEEE Transactions on Electron Devices, 55(7), 1647-1656. doi:10.1109/ted.2008.925151
The influence of junction depth on short channel effects in vertical sidewall MOSFETs
Tan, L., Buiu, O., Hall, S., Gili, E., Uchino, T., & Ashburn, P. (2008). The influence of junction depth on short channel effects in vertical sidewall MOSFETs. Solid-State Electronics, 52(7), 1002-1007. doi:10.1016/j.sse.2008.03.013
Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks
Zhang, J. F., Zhao, C. Z., Chang, M. H., Zahid, M. B., Peaker, A. R., Hall, S., . . . Heyns, M. (2008). Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks. Applied Physics Letters, 92(1). doi:10.1063/1.2828697
Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon
Hurley, P. K., Cherkaoui, K., O’Connor, E., Lemme, M. C., Gottlob, H. D. B., Schmidt, M., . . . Newcomb, S. B. (2008). Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon. Journal of The Electrochemical Society, 155(2), G13. doi:10.1149/1.2806172
'A generalised methodology for oxide leakage current metric'
Engström, O., Piscator, J., Raeissi, B., Hurley, P. K., Cherkaoui, K., Hall, S., . . . Gottlob, H. D. B. (2008). 'A generalised methodology for oxide leakage current metric'. In ULIS 2008 (pp. 4). Udine: Elsevier.
'Challenges of Emulating Biologically Inspired Architectures in Hardware'
Harkin, J., Morgan, F., Hall, S., & McDaid, L. J. (2008). 'Challenges of Emulating Biologically Inspired Architectures in Hardware'. In 4th International Workshop on Reconfigurable Communication Centric System-on-Chips (ReCoSoC) (pp. 37-43). Barcelona: XX.
'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing'
Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I., Werner, M., . . . Newcomb, S. B. (2008). 'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing'. In 15th workshop on Dielectric in Microelectronics (pp. 155-156). Berlin: IHP.
'Leakage current effects on C-V plots of high-k MOS capacitors'
Lu, Y., Hall, S., Mitrovic, I., Davey, W. M., Raeissi, B., Engstrom, O., . . . Lemme, M. C. (2008). 'Leakage current effects on C-V plots of high-k MOS capacitors'. In Wodim (pp. 181-182). Berlin: IHP, Germany.
'Programmable Architectures for Large-scale Implementations of Spiking Neural Networks'
Harkin, J., McDaid, L. J., Hall, S., Dowrick, T., & Morgan, F. (2008). 'Programmable Architectures for Large-scale Implementations of Spiking Neural Networks'. In Irish Signals and Systems Conference 2008 (pp. 105-110). Dublin: X.
'Reconfigurable platforms and the challenges for large-scale implementations of spiking neural networks'
Harkin, J., McDaid, L. J., Morgan, F., Dowrick, T., Hall, S., & Dudek, P. (2008). 'Reconfigurable platforms and the challenges for large-scale implementations of spiking neural networks'. In Field Programmable Logic and Applications (FPL) Conference (pp. 95-102). X: Springer-Verlag.
'Series Resistance in Vertical MOSFETs with Reduced Drain/Source Overlap Capacitance'
Tan, L., Hall, S., Buiu, O., Hakim, M. M. A., Uchino, T., Ashburn, P., & Redman-White, W. (2008). 'Series Resistance in Vertical MOSFETs with Reduced Drain/Source Overlap Capacitance'. In ULIS (pp. 19-23). Udine: Udine University Press.
Improved sub-threshold slope in RF vertical MOSFETS using a frame gate architecture
Hakim, M. M. A., Uchino, T., White, W. R., Ashburn, P., Tan, L., Buiu, O., & Hall, S. (2008). Improved sub-threshold slope in RF vertical MOSFETS using a frame gate architecture. In ESSDERC 2008 - 38th European Solid-State Device Research Conference (pp. 95-98). IEEE. doi:10.1109/essderc.2008.4681707
Process-induced positive charges in Hf-based gate stacks
Zhao, C. Z., Zhang, J. F., Chang, M. H., Peaker, A. R., Hall, S., Groeseneken, G., . . . Heyns, M. (2008). Process-induced positive charges in Hf-based gate stacks. Journal of Applied Physics, 103(1). doi:10.1063/1.2826937
Reconfigurable platforms and the challenges for large-scale implementations of spiking neural networks
Harkin, J., Morgan, F., Hall, S., Dudek, P., Dowrick, T., & McDaid, L. (2008). Reconfigurable platforms and the challenges for large-scale implementations of spiking neural networks. In 2008 International Conference on Field Programmable Logic and Applications (pp. 483-486). IEEE. doi:10.1109/fpl.2008.4629989
2007
A Biologically Plausible Neuron Circuit
Dowrick, T., Hall, S., McDaid, L., Buiu, O., & Kelly, P. (2007). A Biologically Plausible Neuron Circuit. In 2007 International Joint Conference on Neural Networks (pp. 715-719). IEEE. doi:10.1109/ijcnn.2007.4371045
Vertical MOSFETs for High Performance, Low Cost CMOS
Hall, S., Tan, L., Buiu, O., Hakim, M. M., Uchino, T., Ashburn, P., & Redman-White, W. (2007). Vertical MOSFETs for High Performance, Low Cost CMOS. In 2007 International Semiconductor Conference (pp. 387-396). IEEE. doi:10.1109/smicnd.2007.4519742
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi formation
Hurley, P., Pijolat, M., Cherkaoui, K., O'Connor, E., O'Connell, D., Negara, M. A., . . . Newcomb, S. (2007). The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi formation. In ECS Transactions Vol. 11 (pp. 145-156). The Electrochemical Society. doi:10.1149/1.2779556
Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition
Bundesmann, C., Buiu, O., Hall, S., & Schubert, M. (2007). Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition. Applied Physics Letters, 91(12). doi:10.1063/1.2787962
HIGH-κ dielectric stacks for nanoscaled SOI devices
Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2007). HIGH-κ dielectric stacks for nanoscaled SOI devices. NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES, 33-+. doi:10.1007/978-1-4020-6380-0_3
SiGeCHBTs: Impact of C on device pepformance
Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2007). SiGeCHBTs: Impact of C on device pepformance. In Unknown Book (pp. 171-+). doi:10.1007/978-1-4020-6380-0_13
Current transport mechanisms in (HfO<sub>2</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub>/SiO<sub>2</sub> gate stacks
Mitrovic, I. Z., Lu, Y., Buiu, O., & Hall, S. (2007). Current transport mechanisms in (HfO<sub>2</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub>/SiO<sub>2</sub> gate stacks. MICROELECTRONIC ENGINEERING, 84(9-10), 2306-2309. doi:10.1016/j.mee.2007.04.087
Extrinsic stacking fault generation related to high–k dielectric growth on a Si substrate
Volkos, S. N., Bernardini, S., Rigopoulos, N., Efthymiou, E. S., Hawkins, I. D., Hamilton, B., . . . Peaker, A. R. (2007). Extrinsic stacking fault generation related to high–k dielectric growth on a Si substrate. Microelectronic Engineering, 84(9-10), 2374-2377. doi:10.1016/j.mee.2007.04.047
Hydrogen induced positive charge in Hf-based dielectrics
Zhao, C. Z., Zhang, J. F., Zahid, M. B., Efthymiou, E., Lu, Y., Hall, S., . . . Heyns, M. (2007). Hydrogen induced positive charge in Hf-based dielectrics. Microelectronic Engineering, 84(9-10), 2354-2357. doi:10.1016/j.mee.2007.04.096
Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients
Lu, Y., Hall, S., Buiu, O., & Zhang, J. F. (2007). Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients. Microelectronic Engineering, 84(9-10), 2390-2393. doi:10.1016/j.mee.2007.04.097
Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures
Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025
Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074
Electrical and structural properties of hafnium silicate thin films
Mitrovic, I. Z., Buiu, O., Hall, S., Bungey, C., Wagner, T., Davey, W., & Lu, Y. (2007). Electrical and structural properties of hafnium silicate thin films. MICROELECTRONICS RELIABILITY, 47(4-5), 645-648. doi:10.1016/j.microrel.2007.01.065
Extracting the relative dielectric constant for “high-κ layers” from CV measurements – Errors and error propagation
Buiu, O., Hall, S., Engstrom, O., Raeissi, B., Lemme, M., Hurley, P. K., & Cherkaoui, K. (2007). Extracting the relative dielectric constant for “high-κ layers” from CV measurements – Errors and error propagation. Microelectronics Reliability, 47(4-5), 678-681. doi:10.1016/j.microrel.2007.01.006
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052
Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition
Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035
Direct Observation of Anomalous Positive Charge and Electron-Trapping Dynamics in High-$k$ Films Using Pulsed-MOS-Capacitor Measurements
Hall, S., Buiu, O., & Lu, Y. (2007). Direct Observation of Anomalous Positive Charge and Electron-Trapping Dynamics in High-$k$ Films Using Pulsed-MOS-Capacitor Measurements. IEEE Transactions on Electron Devices, 54(2), 272-278. doi:10.1109/ted.2006.888673
'A Biologically Plausible Neuron Circuit'
Dowrick, T., Hall, S., McDaid, L. M., Buiu, O., & Kelly, P. M. (2007). 'A Biologically Plausible Neuron Circuit'. In Int. Joint Conf. on Neural Networks (pp. 23-28). Florida: IEEE.
'A study of interfacial defects in HfO2, La2O3, and Gd2O3'
Hurley, P. K., Cherkaoui, K., Hall, S., Lu, Y., Buiu, O., Lemme, M. C., . . . Schmidt, M. (2007). 'A study of interfacial defects in HfO2, La2O3, and Gd2O3'. In The 6 th International Semiconductor Technology Conference (pp. 456-458). Shanghai: xx.
'Analog Spiking Neuron with Charge-Coupled Synapses'
Chen, Y., McDaid, L. J., Hall, S., Buiu, O., & Kelly, P. (2007). 'Analog Spiking Neuron with Charge-Coupled Synapses'. In World Congress on Engineering (pp. 1-6). Florida: xx.
'Dielectric constants and phonon modes of amorphous hafnium aluminate (HfO2)1-x (Al2O3)x (x
Bundesmann, C., Buiu, O., Hall, S., & Schubert, M. (2007). 'Dielectric constants and phonon modes of amorphous hafnium aluminate (HfO2)1-x (Al2O3)x (x . In Int. Conf. on Spectro-ellipsometry (pp. 40-44). France: Elsevier.
'Dielectric constants and phonon modes of amorphous hafnium'
Bundesmann, C., Buiu, O., Hall, S., & Schubert, M. (2007). 'Dielectric constants and phonon modes of amorphous hafnium'. Applied Physics Letters.
'Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon'
Hurley, P. K., Cherkaoui, K., O'Connor, E., M.C.Lemme, M. C., Gottlob, H. D. B., Schmidt, M., . . . Engstrom, O. (2007). 'Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon'. ECS Transactions - Washington, DC: Physics and Technology of High-k Gate Dielectrics, 11.
'Noise in fully depleted and linearized SOI OTAs based Gm-C filters'
Hasler, I., Buiu, O., Rue, B., Flandre, D., & Hall, S. (2007). 'Noise in fully depleted and linearized SOI OTAs based Gm-C filters'. In EUROSOI 2007 (pp. 76-77). Leuven: IMEC - UCL.
'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications'
Buiu, O., Werner, M., Davey, W. M., Lu, Y., Hall, S., & Chalker, P. (2007). 'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications'. In International Conference on Spectroellipsometry (pp. xx). Marseilles: xx.
'Review and perspective of high-k dielectrics on silicon'
Hall, S., Buiu, O., Mitrovic, I., Lu, Y., & Davey, W. M. (2007). 'Review and perspective of high-k dielectrics on silicon'. Jnl of Telecomms and IT, 2, 33-43. Retrieved from http://www.nit.eu/czasopisma/JTIT/2007/2/33.pdf
'The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation'
Hurley, P. K., Pijolat, M., Cherkaoui, K., O'Connor, E., O'Connell, D., Negara, M. A., . . . Newcombe, S. (2007). 'The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation'. In ECS Symposium (pp. 1-10). Washington, USA: ECS.
'Vertical MOSFETs for high performance, low cost CMOS (Invited)'
Hall, S., Tan, L., Buiu, O., Hakim, M. M., Uchino, T., Ashburn, P., & Redman-White, W. (2007). 'Vertical MOSFETs for high performance, low cost CMOS (Invited)'. In CAS (pp. 1-12). Sinai: Romanian Academy of Science.
Analysis of Metal:(HfO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>:SiO<inf>2</inf>:Si MOS structure equivalent circuits
Gutt, T., Mitrovic, I. Z., Buiu, O., & Hall, S. (2007). Analysis of Metal:(HfO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>:SiO<inf>2</inf>:Si MOS structure equivalent circuits. In MIPRO 2007 - 30th Jubilee International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, Hypermedia and Grid Systems, MEE /HGS Vol. 1 (pp. 59-61).
Failure Analysis of Power Silicon Devices at Operation above 200�C Junction Temperature
Obreja, V. V. N., Nuttall, K. I., Buiu, O., & Hall, S. (2007). Failure Analysis of Power Silicon Devices at Operation above 200�C Junction Temperature. In 2007 International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems. EuroSime 2007 (pp. 1-6). IEEE. doi:10.1109/esime.2007.359943
High - k dielectric stacks for nanoscaled SOI devices
Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2007). High - k dielectric stacks for nanoscaled SOI devices. In S. Hall, A. N. Nazarov, & V. S. Lysenko (Eds.), Nanoscaled Semiconductor-on-Insulator Structures and devices (pp. 33-58). Big Yalta: Springer.
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Raeissi, B., Piscator, J., Engstrom, O., Hall, S., Buiu, O., Lemme, M. C., . . . Osten, H. J. (2007). High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy. In ESSDERC 2007 - 37th European Solid State Device Research Conference (pp. 283-286). IEEE. doi:10.1109/essderc.2007.4430933
Nanoscaled Semiconductor-on-Insulator Structures and Devices
Hall, S. (Ed.) (2007). Nanoscaled Semiconductor-on-Insulator Structures and Devices (Vol. 1). Dordrecht: Springer.
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M. C., Gottlob, H. D. B., . . . Cherkaoui, K. (2007). Navigation aids in the search for future high-k dielectrics: Physical and electrical trends. Solid-State Electronics, 51(4), 622-626. doi:10.1016/j.sse.2007.02.021
2006
High-κ dielectric stacks for nanoscaled SOI devices
Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2006). High-κ dielectric stacks for nanoscaled SOI devices. In Unknown Book (pp. 33-58).
Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials
Gomeniuk, Y., Nazarov, A., Vovk, Y., Lu, Y., Buiu, O., Hall, S., . . . Lemme, M. C. (2006). Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials. Materials Science in Semiconductor Processing, 9(6), 980-984. doi:10.1016/j.mssp.2006.10.014
On the Design of a Low Power Compact Spiking Neuron Cell Based on Charge-Coupled Synapses
Yajie Chen., Hall, S., McDaid, L., Buiu, O., & Kelly, P. (n.d.). On the Design of a Low Power Compact Spiking Neuron Cell Based on Charge-Coupled Synapses. In The 2006 IEEE International Joint Conference on Neural Network Proceedings (pp. 1511-1517). IEEE. doi:10.1109/ijcnn.2006.1716285
SiGeC HBTs: Impact of C on device performance
Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2006). SiGeC HBTs: Impact of C on device performance. In Unknown Book (pp. 171-178).
Spectroellipsometric assessment of HfO<sub>2</sub> thin films
Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215
Shallow junctions on pillar sidewalls for sub-100-nm vertical MOSFETs
Gili, E., Uchino, T., Hakim, M. M. A., de Groot, C. H., Buiu, O., Hall, S., & Ashburn, P. (2006). Shallow junctions on pillar sidewalls for sub-100-nm vertical MOSFETs. IEEE Electron Device Letters, 27(8), 692-695. doi:10.1109/led.2006.879031
The base current and related 1/<i>f</i> noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2006). The base current and related 1/<i>f</i> noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(4-5), 727-731. doi:10.1016/j.mssp.2006.08.029
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301
Asymmetric gate-induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
Gili, E., Kunz, V. D., Uchino, T., Hakim, M. M. A., de Groot, C. H., Ashburn, P., & Hall, S. (2006). Asymmetric gate-induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance. IEEE Transactions on Electron Devices, 53(5), 1080-1087. doi:10.1109/ted.2006.872361
Depletion-isolation effect in vertical MOSFETs during the transition from partial to fully depleted operation
Hakim, M. M. A., de Groot, C. H., Gili, E., Uchino, T., Hall, S., & Ashburn, P. (2006). Depletion-isolation effect in vertical MOSFETs during the transition from partial to fully depleted operation. IEEE Transactions on Electron Devices, 53(4), 929-932. doi:10.1109/ted.2006.871182
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537
'A Silicon Synapse Based on A Charge Transfer Device for Spiking Neural Network Application'
Chen, Y., Hall, S., McDaid, L. J., Buiu, O., & Kelly, P. (2006). 'A Silicon Synapse Based on A Charge Transfer Device for Spiking Neural Network Application'. In 3rd Int. Symp. on Neural Networks (ISNN 2006) (pp. 1-10). Chengdu: IEEE.
'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.
'Design of a low voltage - low power, highly linear Fully -depleted SOI Operational Transconductance Amplifier for Hearing Aid Applications'
Hasler, I., Buiu, O., Rue, B., Flandre, D., & Hall, S. (2006). 'Design of a low voltage - low power, highly linear Fully -depleted SOI Operational Transconductance Amplifier for Hearing Aid Applications'. In EUROSOI'06 (pp. 27-28). Grenoble: EUROSOI.
'Electrical and structural properties of ALD hafnium silicate thin films'
Mitrovic, I. Z., Buiu, O., Hall, S., Bungey, C., Wagner, T., Davey, W., & Lu, Y. (2006). 'Electrical and structural properties of ALD hafnium silicate thin films'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 139-140). Santa Tecla - Catania: CNR - Italy.
'Extracting the relative dielectric constant for ..'
Buiu, O., Hall, S., Engstrom, O., Raeissi, B., Lemme, M., Hurley, P. K., & Cherkaoui, K. (2006). 'Extracting the relative dielectric constant for ..'. In S. Lombardo (Ed.), WoDiM 2006 - 14th Workshop on Dielectrics in Microelectronics (pp. 88-89). Santa Tecla - Catania: CNR Italy.
'High k dielectric stacks for nanoscaled SOI devices (Invited)'
Hall, S., Buiu, O., Mitorvic, I. Z., Lu, Y., & Davey, W. M. (2006). 'High k dielectric stacks for nanoscaled SOI devices (Invited)'. In NATO Advanced research Workshop (pp. 23-25). Sudak: IEEE.
'Multi angle spectrocopic ellipsometry investigation of hafnium silicates thin films'
Buiu, O., Hall, S., & Davey, W. (2006). 'Multi angle spectrocopic ellipsometry investigation of hafnium silicates thin films'. In 4th Workshop Ellipsometry (pp. 125). Berlin: BAM.
'Navigation aids in the search for future high k dielectrics: physical and electrical trends'
Engstrom, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M. C., Gottlob, H. D. B., . . . Cherkaoui, H. (2006). 'Navigation aids in the search for future high k dielectrics: physical and electrical trends'. In ULIS 2006 (pp. 115-118). Grenoble: CEA - LETI.
'Thin Transition metal oxide layers for micro-and nano-electronics'
Buiu, O., & Hall, S. (2006). 'Thin Transition metal oxide layers for micro-and nano-electronics'. In International Conference of Physical Chemistry - RomPhysChem 12 (pp. 174). Bucharest: Romanian Academy, University of Bucharest.
'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'
Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.
A Silicon Synapse Based on a Charge Transfer Device for Spiking Neural Network Application
Chen, Y., Hall, S., McDaid, L., Buiu, O., & Kelly, P. (2006). A Silicon Synapse Based on a Charge Transfer Device for Spiking Neural Network Application. Unknown Journal, 1366-1373. doi:10.1007/11760191_198
A Solid State Neuron for the Realisation of Highly Scaleable Third Generation Neural Networks
Chen, Y., Hall, S., Mcdaid, L., Buiu, O., & Kelly, P. (2006). A Solid State Neuron for the Realisation of Highly Scaleable Third Generation Neural Networks. In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 1071-1073). IEEE. doi:10.1109/icsict.2006.306684
A study of interfacial defects in HfO<inf>2</inf>, LA<inf>2</inf>O <inf>3</inf>, and GD<inf>2</inf>O<inf>3</inf> thin films on silicon substrates
Hurley, P. K., Cherkaoui, K., O'Connor, E., Hall, S., Lu, Y., Buiu, O., . . . Engstrom, O. (2006). A study of interfacial defects in HfO<inf>2</inf>, LA<inf>2</inf>O <inf>3</inf>, and GD<inf>2</inf>O<inf>3</inf> thin films on silicon substrates. In Semiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology (pp. 389-401).
A technology for building shallow junction MOSFETs on vertical pillar walls
Tan, L., Buiu, O., Hall, S., Gili, E., & Ashburn, P. (2006). A technology for building shallow junction MOSFETs on vertical pillar walls. In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 472-474). IEEE. doi:10.1109/icsict.2006.306304
On the Design of a Low Power Compact Spiking Neuron Cell Based on Charge-Coupled Synapses
Yajie Chen., Hall, S., McDaid, L., Buiu, O., & Kelly, P. (2006). On the Design of a Low Power Compact Spiking Neuron Cell Based on Charge-Coupled Synapses. In The 2006 IEEE International Joint Conference on Neural Network Proceedings (pp. 1511-1517). IEEE. doi:10.1109/ijcnn.2006.246612
2005
Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base. In Unknown Book (Vol. 780, pp. 265-268). Retrieved from https://www.webofscience.com/
1/<i>f</i> Noise and generation/recombination noise in SiGeHBTs on SOI
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 1/<i>f</i> Noise and generation/recombination noise in SiGeHBTs on SOI. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1468-1477. doi:10.1109/TED.2005.850697
GSMBE growth and structural characterisation of SiGeC layers for HBT
Zhang, J., Neave, J. H., Li, X. B., Fewster, P. F., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2005). GSMBE growth and structural characterisation of SiGeC layers for HBT. JOURNAL OF CRYSTAL GROWTH, 278(1-4), 505-511. doi:10.1016/j.jcrysgro.2004.12.147
Optical and electrical characterization of hafnium oxide deposited by MOCVD
Lu, Y., Buiu, O., Hall, S., & K. Hurley, P. (2005). Optical and electrical characterization of hafnium oxide deposited by MOCVD. Microelectronics Reliability, 45(5-6), 965-968. doi:10.1016/j.microrel.2004.11.015
SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers
Bain, M., ElMubarek, H. A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., . . . Ashburn, P. (2005). SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers. IEEE Transactions on Electron Devices, 52(3), 317-324. doi:10.1109/ted.2005.843872
Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications
Mitrovic, I. Z., Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P. L. F., . . . Ashburn, P. (2005). Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20(1), 95-102. doi:10.1088/0268-1242/20/1/016
Review of SiGeHBTs on SOI
Mitrovic, I. Z., Buiu, O., Hall, S., Bagnall, D. M., & Ashburn, P. (2005). Review of SiGeHBTs on SOI. SOLID-STATE ELECTRONICS, 49(9), 1556-1567. doi:10.1016/j.sse.2005.07.020
SiGe Heterojunction Bipolar Transistors on Insulating Substrates
Hall, S., Buiu, O., Mitrovic, I. Z., El Mubarek, H. A. W., Ashburn, P., Bain, M., . . . Zhang, J. (2005). SiGe Heterojunction Bipolar Transistors on Insulating Substrates. In NATO Science Series II: Mathematics, Physics and Chemistry (pp. 261-272). Springer Netherlands. doi:10.1007/1-4020-3013-4_29
Special Issue in Solid State Electronics
Pergamon. (Ed.) (2005). Special Issue in Solid State Electronics. In 6th Int. Conf. on Ultimate Integration of Silicon (ULIS) (pp. 131-134). Grenoble: Pergaman.
2004
CMOS-compatible vertical MOSFETs and logic gates with reduced parasitic capacitance
Kunz, V. D., De Groot, C. H., Gili, E., Uchino, T., Hall, S., & Ashburn, P. (2004). CMOS-compatible vertical MOSFETs and logic gates with reduced parasitic capacitance. In ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference (pp. 221-224).
Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques
Zhang, J., Neave, J. H., Li, X. B., Fewster, P. P., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2004). Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques. In Proceedings - Electrochemical Society Vol. 7 (pp. 203-214).
Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures
Mitrovic, I. Z., Buiu, O., Hall, S., & Ward, P. J. (n.d.). Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures. In 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Vol. 2 (pp. 487-490). IEEE. doi:10.1109/icmel.2004.1314869
Recent developments in deca-nanometer vertical MOSFETs
Hall, S., Donaghy, D., Buiu, O., Gili, E., Uchino, T., Kunz, V. D., . . . Ashburn, P. (2004). Recent developments in deca-nanometer vertical MOSFETs. Microelectronic Engineering, 72(1-4), 230-235. doi:10.1016/j.mee.2003.12.042
Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
Gili, E., Kunz, V. D., de Groot, C. H., Uchino, T., Ashburn, P., Donaghy, D. C., . . . Hemment, P. L. F. (2004). Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance. Solid-State Electronics, 48(4), 511-519. doi:10.1016/j.sse.2003.09.019
Recent developments in vertical MOSFETs and SiGe HBTs
Hall, S., Ashburn, P., Buiu, O., & Groot, K. D. (n.d.). Recent developments in vertical MOSFETs and SiGe HBTs. Journal of Telecommunications and Information Technology, (1), 26-35. doi:10.26636/jtit.2004.1.232
'Carrier Lifetime in Ge+ implanted SiGe HBTs structures (Best paper award)'
Mitrovic, I. Z., Buiu, O., Hall, S., & Ward, P. J. (2004). 'Carrier Lifetime in Ge+ implanted SiGe HBTs structures (Best paper award)'. In N. Stojadinovic (Ed.), 24th International Conf. On Microelectronics, MIEL 2004 Vol. 2 (pp. 487-490). Nis: Electron Device Society of the Institute of Electrical and Electronics Engineers, Inc.
'Optical Characterization of SiGe and SiGe(C) alloy layers for HBT's: Possibilities and limitations'
Buiu, O., Mitrovic, I., Hall, S., El Mubarek, H. A. W., Ashburn, P., Dilliway, G. D., . . . Zhang, J. (2004). 'Optical Characterization of SiGe and SiGe(C) alloy layers for HBT's: Possibilities and limitations'. In I. of Physics, & U. K. Consortium for Photonics (Eds.), PHOTON 04 (pp. 21). Glasgow: Institute of Physics.
'Optical and electrical characterization of hafnium oxide deposited by MOCVD'
Lu, Y., Buiu, O., Hall, S., & Hurley, P. K. (2004). 'Optical and electrical characterization of hafnium oxide deposited by MOCVD'. In P. K. Hurley (Ed.), 13th Workshop on Dielectrics in Microelectronics (pp. 32). Cork, Ireland: NCSR.
Design of 50-nm Vertical MOSFET Incorporating a Dielectric Pocket
Donaghy, D., Hall, S., deGroot, C. H., Kunz, V. D., & Ashburn, P. (2004). Design of 50-nm Vertical MOSFET Incorporating a Dielectric Pocket. IEEE Transactions on Electron Devices, 51(1), 158-160. doi:10.1109/ted.2003.821378
Investigation of optical and electronic properties of Hafnium Aluminate films deposited by MOCVD
Buiu, O., Taylor, S., Hall, S., Lu, Y., Potter, R. J., Marshall, P. A., . . . Jones, A. C. (2004). Investigation of optical and electronic properties of Hafnium Aluminate films deposited by MOCVD. In U. Valbusa, & M. Anderle (Eds.), International Vacuum Congress /International Conference on Solid Surfaces IVC/ICSS (pp. 849). Venice: International Union for Vacuum Science, Technique and Applications.
2003
Modelling of gain control in SiGe HBTs and Si bipolar transistors by Ge incorporation in the polysilicon emitter
Kunz, V. D., De Groot, C. H., Anteney, I. M., Abdul-Rahim, A. I., Hall, S., Hemment, P. L. F., . . . Ashburn, P. (2003). Modelling of gain control in SiGe HBTs and Si bipolar transistors by Ge incorporation in the polysilicon emitter. In 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 Vol. 2 (pp. 16-19).
Polycrystalline silicon-germanium emitters for gain control, with application to SiGe HBTs
Kunz, V. D., de Groot, C. H., Hall, S., & Ashburn, P. (2003). Polycrystalline silicon-germanium emitters for gain control, with application to SiGe HBTs. IEEE Transactions on Electron Devices, 50(6), 1480-1486. doi:10.1109/ted.2003.813338
Reduction of parasitic capacitance in vertical mosfets by spacer local oxidation
Kunz, V. D., Uchino, T., de Groot, C. H., Ashburn, P., Donaghy, D. C., Hall, S., . . . Hemment, P. L. F. (2003). Reduction of parasitic capacitance in vertical mosfets by spacer local oxidation. IEEE Transactions on Electron Devices, 50(6), 1487-1493. doi:10.1109/ted.2003.813334
Mubarek, H. A. W. E. (2003). Unknown Title. Journal of Materials Science: Materials in Electronics, 14(5/7), 261-265. doi:10.1023/a:1023947122399
Current crowding effects in SOI-SiGe HBTs with low doped emitters
Hall, S., Buiu, O., Lamb, A. C., El Mubarek, H. A. W., & Ashburn, P. (n.d.). Current crowding effects in SOI-SiGe HBTs with low doped emitters. In Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) (pp. 303-306). IEEE. doi:10.1109/essderc.2003.1256874
Electrical characteristics of single, double & surround gate vertical MOSFETs with reduced overlap capacitance
Gili, E., Kunz, V. D., de Groot, C. H., Uchino, T., Donaghy, D., Hall, S., & Ashburn, P. (n.d.). Electrical characteristics of single, double & surround gate vertical MOSFETs with reduced overlap capacitance. In Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) (pp. 533-536). IEEE. doi:10.1109/essderc.2003.1256931
2002
A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization
Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N. P., Riley, L. S., & Hall, S. (2002). A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization. Solid-State Electronics, 46(12), 2053-2061. doi:10.1016/s0038-1101(02)00175-2
Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors
Kunz, V. D., de Groot, C. H., Hall, S., Anteney, I. M., Abdul-Rahim, A. I., & Ashburn, P. (2002). Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors. In 32nd European Solid-State Device Research Conference (pp. 171-174). IEEE. doi:10.1109/essderc.2002.194897
Investigating 50nm Channel Length Vertical MOSFET Containing a Dielectric Pocket, in a Circuit Environment
Donaghy, D. C., Hall, S., Kunz, D., de Groot, K., & Ashburn, P. (2002). Investigating 50nm Channel Length Vertical MOSFET Containing a Dielectric Pocket, in a Circuit Environment. In 32nd European Solid-State Device Research Conference (pp. 499-502). IEEE. doi:10.1109/essderc.2002.194977
2001
Noise in p-channel SiGe and Si MOSFETs with gate oxide grown by low temperature plasma anodisation
Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N. P., Riley, L. S., & Hall, S. (2001). Noise in p-channel SiGe and Si MOSFETs with gate oxide grown by low temperature plasma anodisation. In Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp. 181-186).
SiGe HBTs on bonded wafer substrates
Hall, S., Lamb, A. C., Bain, M., Armstrong, B. M., Gamble, H., El Mubarek, H. A. W., & Ashburn, P. (2001). SiGe HBTs on bonded wafer substrates. Microelectronic Engineering, 59(1-4), 449-454. doi:10.1016/s0167-9317(01)00641-4
A simulation study to quantify the advantages of silicon-on-insulator (SOI) technology for low power
Donaghy, D., Brackenbury, L., & Hall, S. (2001). A simulation study to quantify the advantages of silicon-on-insulator (SOI) technology for low power. In IEE Colloquium (Digest) (pp. 69-74).
'Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors'
Schiz, J. F. W., Bonar, J. M., Lamb, A. C., Christiano, F., Ashburn, P., Hemment, P. L. F., & Hall, S. (2001). 'Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors'. IEEE Trans Elec. Device, 48(11), 2492-2499.
A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket
Lamb, A. C., Riley, L. S., Hall, S., Kunz, V. D., de Groot, C. H., & Ashburn, P. (2001). A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket. In 31st European Solid-State Device Research Conference (pp. 347-350). IEEE. doi:10.1109/essderc.2001.195272
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy
Lamb, A. C., Schiz, J. F. W., Bonar, J. M., Cristiano, F., Ashburn, P., Hall, S., & Hemment, P. L. F. (2001). Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. Microelectronics Reliability, 41(2), 273-279. doi:10.1016/s0026-2714(00)00219-5
Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy
Schiz, J. F. W., Lamb, A. C., Cristiano, F., Bonar, J., Ashburn, P., Hall, S., & Hemment, P. L. F. (2001). Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy. IEEE Transactions on Electron Devices, 48(11), 2492-2499. doi:10.1109/16.960373
2000
Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation
Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N. P., Riley, L. S., & Hall, S. (2000). Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation. In Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp. 14-19).
SiGe device architectures synthesised by local area Ge/sup +/ implantation-structural and electrical characterisation
Graouil, H., Nejim, A., Hemment, P. L. F., Riley, L., Hall, S., Mitchell, M., & Ashburn, P. (n.d.). SiGe device architectures synthesised by local area Ge/sup +/ implantation-structural and electrical characterisation. In 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432). IEEE. doi:10.1109/.2000.924084
Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation
Riley, L. S., Hall, S., & Schitz, J. (2000). Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation. Solid-State Electronics, 44(11), 2093-2095. doi:10.1016/s0038-1101(00)00173-8
A Comparison of PNP and NPN SiGe Heterojunction Bipolar Transistors Fabricated by Ge(+)-implantation
Mitchell, M., Ashburn, P., Graoui, H., Hemment, P. L. F., Lamb, A., Hall, S., & Nigrin, S. (2000). A Comparison of PNP and NPN SiGe Heterojunction Bipolar Transistors Fabricated by Ge(+)-implantation. In 30th European Solid-State Device Research Conference (pp. 248-251). IEEE. doi:10.1109/essderc.2000.194761
Electrical characterisation of n and p-channel SiGe MOSFETs with gate oxides formed by plasma oxidation
Riley, L. S., Hall, S., Zhang, J., Gallas, B., & Evans, A. G. R. (2000). Electrical characterisation of n and p-channel SiGe MOSFETs with gate oxides formed by plasma oxidation. In 30th European Solid-State Device Research Conference (pp. 440-443). IEEE. doi:10.1109/essderc.2000.194809
1999
Integrated Injection Logic
Wainwright, S. P., Hall, S., & Ashburn, P. (n.d.). Integrated Injection Logic. Wiley. doi:10.1002/047134608x.w6816
X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties
Riley, L. S., & Hall, S. (1999). X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties. Journal of Applied Physics, 85(9), 6828-6837. doi:10.1063/1.370201
SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation
Riley, L. S., Hall, S., Harris, J., Fernandez, J., Gallas, B., Evans, A. G. R., . . . Jeynes, C. (1999). SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation. Microelectronic Engineering, 48(1-4), 227-230. doi:10.1016/s0167-9317(99)00376-7
The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates
Riley, L. S., Hall, S., & Bonar, J. M. (1999). The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates. Solid-State Electronics, 43(12), 2247-2250. doi:10.1016/s0038-1101(99)00212-9
1998
Analysis of Si:Ge heterojunction integrated injection logic (I/sup 2/L) structures using a stored charge model
Wainwright, S. P., Hall, S., Ashburn, P., & Lamb, A. C. (1998). Analysis of Si:Ge heterojunction integrated injection logic (I/sup 2/L) structures using a stored charge model. IEEE Transactions on Electron Devices, 45(12), 2437-2447. doi:10.1109/16.735720
1997
<title>DEVS-based simulation architecture for analysis of multivehicle interactions</title>
Hall, S. B. (1997). <title>DEVS-based simulation architecture for analysis of multivehicle interactions</title>. In A. F. Sisti (Ed.), SPIE Proceedings Vol. 3083 (pp. 287-294). SPIE. doi:10.1117/12.276725
Measurement of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation
Wu, Z. Y., Hall, S., Bonar, J. M., & Parker, G. J. (1997). Measurement of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation. Electronics Letters, 33(10), 909. doi:10.1049/el:19970556
Realisation of a 0.1 μm vertical MOSFET with a SiGe source
Hall, S., & Wu, Z. Y. (1997). Realisation of a 0.1 μm vertical MOSFET with a SiGe source. In European Solid-State Device Research Conference (pp. 228-231). doi:10.1109/ESSDERC.1997.194407
The design and characterisation of a SiGe I<sup>2</sup>L technology
Moiseiwitsch, N. E., Kennedy, G. P., Wainwright, S., Ashburn, P., & Hall, S. (1997). The design and characterisation of a SiGe I<sup>2</sup>L technology. In European Solid-State Device Research Conference (pp. 348-351). doi:10.1109/ESSDERC.1997.194437
1996
On Electron Conduction and Trapping in SIMOX Dielectric
Hall, S., & Wainwright, S. P. (1996). On Electron Conduction and Trapping in SIMOX Dielectric. Journal of The Electrochemical Society, 143(10), 3354-3358. doi:10.1149/1.1837211
Electrical Properties of Thermally Oxidized Porous Silicon
Wu, Z. Y., Hall, S., & Keen, J. M. (1996). Electrical Properties of Thermally Oxidized Porous Silicon. Journal of The Electrochemical Society, 143(9), 2972-2980. doi:10.1149/1.1837135
Self-aligned cobalt disilicide/silicon Schottky barrier contacts: fabrication, materials and electrical characterization
Woods, N. J., & Hall, S. (1996). Self-aligned cobalt disilicide/silicon Schottky barrier contacts: fabrication, materials and electrical characterization. Semiconductor Science and Technology, 11(7), 1103-1115. doi:10.1088/0268-1242/11/7/023
A Stored Charge Model for Integrated Injection Logic (I<sup>2</sup>L) Structures using Si/SiGe Material
Wainwright, S. P., Hall, S., & Ashburn, P. (1996). A Stored Charge Model for Integrated Injection Logic (I<sup>2</sup>L) Structures using Si/SiGe Material. In European Solid-State Device Research Conference (pp. 649-652).
Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique
Hall, S., Goh, I. S., & Wu, Z. Y. (1996). Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique. In Selected Topics in Group IV and II–VI Semiconductors (pp. 90-95). Elsevier. doi:10.1016/b978-0-444-82411-0.50026-7
The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs
Wainwright, S. P., Hall, S., & Flandre, D. (1996). The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs. Solid-State Electronics, 39(1), 89-94. doi:10.1016/0038-1101(95)00120-i
1995
Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique
Hall, S., Goh, I. S., & Wu, Z. Y. (1995). Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique. Journal of Crystal Growth, 157(1-4), 90-95. doi:10.1016/0022-0248(95)00377-0
Current status of plasma grown silicon dioxide layers on SiGe epitaxial layers for surface passivation and possible gate oxide application
Hall, S., Goh, I. S., Zhang, J. F., & Eccleston, W. (1995). Current status of plasma grown silicon dioxide layers on SiGe epitaxial layers for surface passivation and possible gate oxide application. In IEE Colloquium (Digest).
Parasitic current mechanisms and current stress induced degradation effects in mesa-isolated, SiGe heterojunction bipolar transistors
Goh, I. S., & Hall, S. (1995). Parasitic current mechanisms and current stress induced degradation effects in mesa-isolated, SiGe heterojunction bipolar transistors. In IEE Colloquium (Digest).
One micrometre scale self-aligned cobalt disilicide Schottky barrier diodes
Woods, N. J., & Hall, S. (1995). One micrometre scale self-aligned cobalt disilicide Schottky barrier diodes. Electronics Letters, 31(21), 1878-1880. doi:10.1049/el:19951275
Electrical properties of plasma-grown oxide on MBE-grown SiGe
Goh, I. S., Zhang, J. F., Hall, S., Eccleston, W., & Werner, K. (1995). Electrical properties of plasma-grown oxide on MBE-grown SiGe. Semiconductor Science and Technology, 10(6), 818-828. doi:10.1088/0268-1242/10/6/013
Accurate threshold voltage measurement for use with SOISPICE
Wainwright, S. P., Hall, S., & Flandre, D. (1995). Accurate threshold voltage measurement for use with SOISPICE. In European Solid-State Device Research Conference (pp. 753-756).
Negative bias instability at the SIMOX buried oxide-silicon overlayer interface
Ngwa, C. S., & Hall, S. (1995). Negative bias instability at the SIMOX buried oxide-silicon overlayer interface. Microelectronic Engineering, 28(1-4), 387-390. doi:10.1016/0167-9317(95)00082-j
Plasma oxidation of Si and SiGe
Goh, I. G., Zhang, J. F., Hall, S., Eccleston, W., & Werner, K. (1995). Plasma oxidation of Si and SiGe. Microelectronic Engineering, 28(1-4), 221-224. doi:10.1016/0167-9317(95)00048-d
Self-aligned cobalt disilicide/silicon schottky barrier diodes
Woods, N. J., & Hall, S. (1995). Self-aligned cobalt disilicide/silicon schottky barrier diodes. In European Solid-State Device Research Conference (pp. 517-520).
Suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs by the use of a narrow band-gap, SiGe source
Wu, Z. Y., Hall, S., & Eccleston, W. (1995). Suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs by the use of a narrow band-gap, SiGe source. In European Solid-State Device Research Conference (pp. 509-512).
Use of MEDICI and SPICE in the design of surface and substrate fed integrated injection logic (I<sup>2</sup>L) structures incorporating Si<inf>1-x</inf>Ge<inf>x</inf> material
Wainwright, S. P., Hall, S., & Ashburn, P. (1995). Use of MEDICI and SPICE in the design of surface and substrate fed integrated injection logic (I<sup>2</sup>L) structures incorporating Si<inf>1-x</inf>Ge<inf>x</inf> material. In IEE Colloquium (Digest).
1994
On the contribution of recombination currents in Schottky barrier diodes
Woods, N. J., & Hall, S. (1994). On the contribution of recombination currents in Schottky barrier diodes. Semiconductor Science and Technology, 9(12), 2295-2297. doi:10.1088/0268-1242/9/12/023
Interface quality of SiGe oxide prepared by RF plasma anodisation
Goh, I. S., Hall, S., Eccleston, W., Zhang, J. F., & Werner, K. (1994). Interface quality of SiGe oxide prepared by RF plasma anodisation. Electronics Letters, 30(23), 1988-1989. doi:10.1049/el:19941315
Electrical characterization of thin film, thin buried oxide SIMOX SOI substrates produced by low-energy, low-dose implantation
Wainwright, S. P., Hall, S., & Marsh, C. D. (1994). Electrical characterization of thin film, thin buried oxide SIMOX SOI substrates produced by low-energy, low-dose implantation. Semiconductor Science and Technology, 9(7), 1404-1413. doi:10.1088/0268-1242/9/7/019
Electron trapping studies in multiple- and single-implant SIMOX oxides
Ngwa, C. S., & Hall, S. (1994). Electron trapping studies in multiple- and single-implant SIMOX oxides. Semiconductor Science and Technology, 9(5), 1069-1079. doi:10.1088/0268-1242/9/5/011
1993
Partial oxidation of porous silicon
Hurley, P. K., Kiely, C. J., Hall, S., Earwaker, L. G., Briggs, M. C., & Keen, J. M. (1993). Partial oxidation of porous silicon. Semiconductor Science and Technology, 8(12), 2168-2175. doi:10.1088/0268-1242/8/12/022
Interpretation of high-field current-voltage and breakdown characteristics in SOI substrates formed using SIMOX technology
Wainwright, S. P., & Hall, S. (1993). Interpretation of high-field current-voltage and breakdown characteristics in SOI substrates formed using SIMOX technology. Semiconductor Science and Technology, 8(10), 1854-1856. doi:10.1088/0268-1242/8/10/011
A study of high field conduction and electron trapping in buried oxides produced by SIMOX technology
Wainwright, S. P., Ngwa, C., Hall, S., & Eccleston, W. (1993). A study of high field conduction and electron trapping in buried oxides produced by SIMOX technology. Microelectronic Engineering, 22(1-4), 399-402. doi:10.1016/0167-9317(93)90197-d
Electrical characterisation of oxidised porous silicon
Wu, Z. Y., Hall, S., Eccleston, W., & Keen, J. M. (1993). Electrical characterisation of oxidised porous silicon. Microelectronic Engineering, 22(1-4), 359-362. doi:10.1016/0167-9317(93)90187-a
Typical effects in SOI MOSFETS and related electrical and thermal characterisation
Eccleston, W., & Hall, S. (1993). Typical effects in SOI MOSFETS and related electrical and thermal characterisation. Microelectronic Engineering, 22(1-4), 331-338. doi:10.1016/0167-9317(93)90182-5
1992
Comparison of instabilities observed in electrical characteristics of silicon-on-insulator MOSFETs, both above and below threshold voltage
McDaid, L. J., Hall, S., Nuttall, K. I., & Eccleston, W. (1992). Comparison of instabilities observed in electrical characteristics of silicon-on-insulator MOSFETs, both above and below threshold voltage. Electronics Letters, 28(15), 1441. doi:10.1049/el:19920917
On the application of capacitance-time and charge-time measurements to determine the generation lifetime and surface generation velocity in silicon-on-insulator (SOI) substrates
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1992). On the application of capacitance-time and charge-time measurements to determine the generation lifetime and surface generation velocity in silicon-on-insulator (SOI) substrates. Semiconductor Science and Technology, 7(7), 940-952. doi:10.1088/0268-1242/7/7/012
Electron trapping in SiO/sub 2/ formed by oxygen implantation
Hurley, P. K., Hall, S., & Eccleston, W. (1992). Electron trapping in SiO/sub 2/ formed by oxygen implantation. IEEE Electron Device Letters, 13(5), 238-240. doi:10.1109/55.145039
Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation
Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., . . . Hall, S. (n.d.). Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation. In IEEE International SOI Conference (pp. 8-9). IEEE. doi:10.1109/soi.1992.664770
1991
Experimental determination of magnitude of selfheating and its influence on breakdown in silicon-on-insulator transistors
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1991). Experimental determination of magnitude of selfheating and its influence on breakdown in silicon-on-insulator transistors. Electronics Letters, 27(22), 2006. doi:10.1049/el:19911242
A novel technique for the measurement of generation lifetime in undoped polysilicon material using the principle of charge centroids
McDaid, L. J., Hall, S., & Eccleston, W. (1991). A novel technique for the measurement of generation lifetime in undoped polysilicon material using the principle of charge centroids. Semiconductor Science and Technology, 6(10), 1032-1035. doi:10.1088/0268-1242/6/10/015
Suppression of latch in SOI MOSFETs by silicidation of source
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1991). Suppression of latch in SOI MOSFETs by silicidation of source. Electronics Letters, 27(11), 1003-1005. doi:10.1049/el:19910625
A simple technique for measuring the generation lifetime in SOI-substrate material using the principle of charge centroids
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1991). A simple technique for measuring the generation lifetime in SOI-substrate material using the principle of charge centroids. IEEE Electron Device Letters, 12(6), 318-320. doi:10.1109/55.82073
Reduction of the latch effect in SOI MOSFETS by the silicidation of the source
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1991). Reduction of the latch effect in SOI MOSFETS by the silicidation of the source. Microelectronic Engineering, 15(1-4), 203-206. doi:10.1016/0167-9317(91)90213-w
Reduction of the latch effect in SOI MOSFETs by the silicidation of the source
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1991). Reduction of the latch effect in SOI MOSFETs by the silicidation of the source. In European Solid-State Device Research Conference (pp. 203-206).
1990
A simple model to predict the holding voltage for SOI MOSFETs operating in the latch state
McDaid, L. J., Hall, S., Marsland, J. S., Eccleston, W., Alderman, J. C., Cook, K. R., . . . Uren, M. J. (n.d.). A simple model to predict the holding voltage for SOI MOSFETs operating in the latch state. In 1990 IEEE SOS/SOI Technology Conference. Proceedings (pp. 19-20). IEEE. doi:10.1109/sossoi.1990.145688
Determination of generation lifetime in silicon-on-insulator (SOI) substrates using a three-terminal capacitance-time response
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (n.d.). Determination of generation lifetime in silicon-on-insulator (SOI) substrates using a three-terminal capacitance-time response. In 1990 IEEE SOS/SOI Technology Conference. Proceedings (pp. 93-94). IEEE. doi:10.1109/sossoi.1990.145725
Single-transistor latch induced degradation in thin-film SOI MOSFETs: Implications for sub-micron SOI MOSFETs
Bunyan, R. J. T., Uren, M. J., McDaid, L., Hall, S., Eccleston, W., Thomas, N., & Davis, J. R. (1990). Single-transistor latch induced degradation in thin-film SOI MOSFETs: Implications for sub-micron SOI MOSFETs. In European Solid-State Device Research Conference (pp. 433-436).
The effect of high field stress on the capacitance/voltage characteristics of buried insulators formed by oxygen implantation
Hurley, P. K., Hall, S., Eccleston, W., & Alderman, J. C. (n.d.). The effect of high field stress on the capacitance/voltage characteristics of buried insulators formed by oxygen implantation. In 1990 IEEE SOS/SOI Technology Conference. Proceedings (pp. 160-161). IEEE. doi:10.1109/sossoi.1990.145761
The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs
McDaid, L. J., Hall, S., Eccleston, W., Watkinson, P., & Alderman, J. C. (n.d.). The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs. In 1990 IEEE SOS/SOI Technology Conference. Proceedings (pp. 141-142). IEEE. doi:10.1109/sossoi.1990.145751
The influence of substrate bias fixed charge in the buried insulator on the gain of the parasitic bipolar inherent in silicon-on-insulator MOSFETs
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1990). The influence of substrate bias fixed charge in the buried insulator on the gain of the parasitic bipolar inherent in silicon-on-insulator MOSFETs. In European Solid-State Device Research Conference (pp. 429-432).
1989
Negative resistance in the output characteristics of SOI MOSFETs
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (n.d.). Negative resistance in the output characteristics of SOI MOSFETs. In IEEE SOS/SOI Technology Conference (pp. 33-34). IEEE. doi:10.1109/soi.1989.69752
Physical origin of negative differential resistance in SOI transistors
McDaid, L. J., Hall, S., Mellor, P. H., Eccleston, W., & Alderman, J. C. (1989). Physical origin of negative differential resistance in SOI transistors. Electronics Letters, 25(13), 827. doi:10.1049/el:19890557
Assessment of plasma-grown oxides on Si:Ge substrates
Hall, S., Zhang, J. F., Taylor, S., Eccleston, W., Beahan, P., Tatlock, G. T., . . . Tuppen, C. (1989). Assessment of plasma-grown oxides on Si:Ge substrates. Applied Surface Science, 39(1-4), 57-64. doi:10.1016/0169-4332(89)90419-4
Interpretation of capacitance-voltage characteristics on silicon-on-insulator (SOI) capacitors
McDaid, L. J., Hall, S., Eccleston, W., & Alderman, J. C. (1989). Interpretation of capacitance-voltage characteristics on silicon-on-insulator (SOI) capacitors. Solid-State Electronics, 32(1), 65-68. doi:10.1016/0038-1101(89)90049-x
Unknown Title (1989). Springer Berlin Heidelberg. doi:10.1007/978-3-642-52314-4_183
Unknown Title (1989). Springer Berlin Heidelberg. doi:10.1007/978-3-642-52314-4_159
1988
A rapid assessment technique for SOI substrates
Hall, S., McDaid, L. J., Eccleston, W., & Alderman, J. C. (n.d.). A rapid assessment technique for SOI substrates. In Proceedings. SOS/SOI Technology Workshop (pp. 28). IEEE. doi:10.1109/soi.1988.95403
Emitter-down, Schottky collector HJBT for very fast, high-density logic applications
Hall, S., Cornell, L. J., Eccleston, W., & Roberts, J. S. (1988). Emitter-down, Schottky collector HJBT for very fast, high-density logic applications. Electronics Letters, 24(15), 971. doi:10.1049/el:19880662
1987
The heterojunction bipolar transistor an estimate of its potential for digital applications
Hall, S., & Eccleston, W. (1987). The heterojunction bipolar transistor an estimate of its potential for digital applications. Journal of the Institution of Electronic and Radio Engineers, 57(1S), S29. doi:10.1049/jiere.1987.0010
Undated
Engineered tunnel-barrier terahertz rectifiers for optical nantennas
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.
High-κ dielectrics on germanium for future high performance CMOS technology
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