Publications
2018
Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering
Zhi, D., Fewster, P. F., Pashley, D. W., Joyce, B. A., Goodhew, P. J., & Jones, T. S. (2003). Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering. In EMAG 2003 Vol. 180 (pp. 91-94). Bristol: IoPP.
2013
The Scholarship of Teaching and Learning as collaborative working: a case study in shared practice and collective purpose
Kahn, P., Goodhew, P., Murphy, M., & Walsh, L. (2013). The Scholarship of Teaching and Learning as collaborative working: a case study in shared practice and collective purpose. HIGHER EDUCATION RESEARCH & DEVELOPMENT, 32(6), 901-914. doi:10.1080/07294360.2013.806439
2011
Introduction to Transmission Electron Microscopy
Goodhew, P. J. (2011). Introduction to Transmission Electron Microscopy. In R. Brydson (Ed.), Aberration-Corrected Analytical Electron Microscopy (pp. 296). London: John Wiley.
2010
Teaching Engineering
Goodhew, P. J. (2010). Teaching Engineering. Liverpool: UKCME.
2007
'Active Learning of Materials Science'
Goodhew, P. J. (2007). 'Active Learning of Materials Science'. Journal of Materials Education, 29(1-2), 43-53. Retrieved from http://www.unit.edu/ICME/
Active Learning in Materials Science and Engineering
Goodhew, P. J., & Bullough, T. J. (2007). Active Learning in Materials Science and Engineering. Journal of Materials Education, 28(3-6), 161-169.
2006
Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM
Wang, P., Bleloch, A. L., Falke, U., & Goodhew, P. J. (2006). Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM. Ultramicroscopy, 106(4-5), 277-283. doi:10.1016/j.ultramic.2005.09.005
Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra
Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., & Gass, M. H. (2006). Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra. Applied Physics Letters, 88(5). doi:10.1063/1.2169904
An approach to the systematic distortion correction in aberration-corrected HAADF images.
Sanchez, A. M., Galindo, P. L., Kret, S., Falke, M., Beanland, R., & Goodhew, P. J. (2006). An approach to the systematic distortion correction in aberration-corrected HAADF images.. Journal of microscopy, 221(Pt 1), 1-7. doi:10.1111/j.1365-2818.2006.01533.x
Asking culturally neutral questions in engineering
Goodhew, P. J. (2006). Asking culturally neutral questions in engineering. World Transactions on Engineering and Technology Education, 5(2), 349-352.
Direct measurement of composition of buried quantum dots using aberration-corrected STEM
Wang, P., Bleloch, A. L., Falke, M., Ng, J., Missous, M., & Goodhew, P. J. (2006). Direct measurement of composition of buried quantum dots using aberration-corrected STEM. Applied Physics Letters, 89(7), 072111.
Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images
Sanchez, A. M., Galindo, P. L., Kret, S., Falke, M., Beanland, R., & Goodhew, P. J. (2006). Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images. Microscopy and microanalysis, 12, 1-10.
Threshold concepts in engineering education-exploring potential blocks in student understanding
Baillie, C., Goodhew, P., & Skryabina, E. (2006). Threshold concepts in engineering education-exploring potential blocks in student understanding. International Journal of Engineering Education, 22(5), 955-962.
2005
Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra
Sánchez, A. M., Beanland, R., Gass, M. H., Papworth, A. J., Goodhew, P. J., & Hopkinson, M. (n.d.). Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra. Physical Review B, 72(7). doi:10.1103/physrevb.72.075339
V-defects and dislocations in InGaN/GaN heterostructures
Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., Singh, P., Ruterana, P., . . . Lee, H. J. (2005). V-defects and dislocations in InGaN/GaN heterostructures. Thin Solid Films, 479(1-2), 316-320. doi:10.1016/j.tsf.2004.11.207
Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure
Beanland, R., Sanchez, A. M., Papworth, A. J., Gass, M. H., & Goodhew, P. J. (2005). Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials (pp. 162-166). Oxford: Springer.
Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging
Zhi, D., Midgley, P. A., Dunin-Borkowski, R. E., Joyce, B. A., Pashley, D. W., Bleloch, A. L., & Goodhew, P. J. (2005). Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging. In MRS Vol. 832 (pp. 105-110). Boston: MRS.
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra
Sánchez, A. M., Gass, M. H., Papworth, A. J., Beanland, R., Drouot, V., & Goodhew, P. J. (n.d.). Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra. In Unknown Conference (pp. 259-262). Springer Berlin Heidelberg. doi:10.1007/3-540-31915-8_53
2004
Nanoscale EELS analysis of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">InGaN</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow></mml:math>heterostructures
Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (n.d.). Nanoscale EELS analysis of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">InGaN</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow></mml:math>heterostructures. Physical Review B, 70(3). doi:10.1103/physrevb.70.035325
The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy
ZHI, D. (2004). The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy. Microelectronic Engineering, 73-74, 604-609. doi:10.1016/s0167-9317(04)00151-0
Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM
Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM. Microscopy and microanalysis, 10(2), 582-583.
Determination of size and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering
Zhi, D., Fewster, P. F., Pashley, D. W., Joyce, B. A., Goodhew, P. J., & Jones, T. S. (2004). Determination of size and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering. Design and Nature, 6, 91-94.
EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2
Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2. Microscopy and microanalysis, 10(2), 864-865.
Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy
Sanchez, A. M., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2004). Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy. In EMAG 03 (pp. 131-134). Bristol: IoPP.
Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass
Papworth, A. J., Hughes, M. J., & Goodhew, P. J. (2004). Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass. Microscopy and microanalysis, 10(2), 646-647.
Scanning transmission electron microscopy (STEM)–transmission electron microscopy (TEM) analysis of nitrogen ion implanted austenitic 302 stainless steel
Aggarwal, S., Goodhew, P. J., & Murray, R. T. (2004). Scanning transmission electron microscopy (STEM)–transmission electron microscopy (TEM) analysis of nitrogen ion implanted austenitic 302 stainless steel. Thin Solid Films, 446(1), 12-17. doi:10.1016/s0040-6090(03)01233-1
2003
Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy
Sanchez, A., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2003). Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy. In S. McVitie, & D. McComb (Eds.), EMAG 2003 Vol. 179 (pp. 131-134). Oxford: Institute of Physics Publishing.
SuperSTEM - the microscope with glasses
Goodhew, P., & Bleloch, A. (2003). SuperSTEM - the microscope with glasses. Materials World, 11(3), 23-24.
The Tool Shop or Characterising Your Material
Goodhew, P. J., & Mannis, A. (2003). The Tool Shop or Characterising Your Material. In C. A. Baillie, & L. Vanasupa (Eds.), Navigating the Materials World (pp. 31-50). London: Academic Press.
2002
Interactive Software for Materials Teaching
Goodhew, P. J. (2002). Interactive Software for Materials Teaching. J Materials Education, 24, 35-40.
The SuperSTEM; An Aberration Corrected Analytical Microscopy Facility
Bleloch, A. L., Brown, L. M., Brydson, R. M., Craven, A. J., Goodhew, P. J., & Kiely, C. J. (2002). The SuperSTEM; An Aberration Corrected Analytical Microscopy Facility. In A. N. Other (Ed.), Microscopy and Microanalysis Vol. 8 (pp. 470-471). NY: TMS.
2001
Three-dimensional compositional analysis of quantum dots
Harvey, A., Davock, H., Dunbar, A., Bangert, U., & Goodhew, P. J. (2001). Three-dimensional compositional analysis of quantum dots. Journal of Physics D: Applied Physics, 34(4), 636-644. doi:10.1088/0022-3727/34/4/326
Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy
Zhi, D., Davock, H., Murray, R., Roberts, C., Jones, T. S., Pashley, D. W., . . . Joyce, B. A. (2001). Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy. Journal of Applied Physics, 89(4), 2079-2083. doi:10.1063/1.1337921
Electron Microscopy and Analysis
Goodhew, P. J., Humphreys, J., & Beanland, R. (2001). Electron Microscopy and Analysis. London: Taylor & Francis.
2000
A model of dislocation blocking and its application to the development of misfit dislocation arrays
Goodhew, P. J. (2000). A model of dislocation blocking and its application to the development of misfit dislocation arrays. Philosophical Magazine A, 80(9), 2099-2108. doi:10.1080/01418610008212153
1999
Strain relaxation in III–V semiconductor heterostructures
Goodhew, P. J., & Giannakopoulos, K. (1999). Strain relaxation in III–V semiconductor heterostructures. Micron, 30(1), 59-64. doi:10.1016/s0968-4328(98)00038-9
Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs
Jothilingam, R., Farrell, T., Joyce, T. B., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53(1-2), 7-10. doi:10.1016/s0042-207x(98)00411-4
1998
Striation development in CBE-grown vicinal plane InGaAs layers
Giannakopoulos, K. P., & Goodhew, P. J. (1998). Striation development in CBE-grown vicinal plane InGaAs layers. Journal of Crystal Growth, 188(1-4), 26-31. doi:10.1016/s0022-0248(98)00077-3
Introduction to Scanning Transmission Electron Microscopy
Keyse, R. J., Garratt-Reed, A. J., Goodhew, P. J., & Lorimer, G. W. (1998). Introduction to Scanning Transmission Electron Microscopy (Vol. 39). Oxford: BIOS.
Materials Science on CD-ROM
MATTER, P. T. (1998). Materials Science on CD-ROM. London: Chapman & Hall. Retrieved from http://matter.org.uk/matscicdrom/
1997
Dislocation blocking in InxGa1-xAs (x
MacPherson, G., & Goodhew, P. J. (1997). Dislocation blocking in InxGa1-xAs (x. Appl Phys Lett, 70.
1996
A refined scheme for the reduction of threading dislocation densities in In<i>x</i>Ga1−<i>x</i>As/GaAs epitaxial layers
MacPherson, G., & Goodhew, P. J. (1996). A refined scheme for the reduction of threading dislocation densities in In<i>x</i>Ga1−<i>x</i>As/GaAs epitaxial layers. Journal of Applied Physics, 80(12), 6706-6710. doi:10.1063/1.363796
Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
Kidd, P., Dunstan, D. J., Colson, H. G., Louren¸o, M. A., Sacedo´n, A., Gonza´lez-Sanz, F., . . . Goodhew, P. J. (1996). Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers. Journal of Crystal Growth, 169(4), 649-659. doi:10.1016/s0022-0248(96)00665-3
A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers
Macpherson, G., Beanland, R., & Goodhew, P. J. (1996). A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers. Philosophical Magazine A, 73(5), 1439-1450. doi:10.1080/01418619608245143
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
Beanland, R., Dunstan, D. J., & Goodhew, P. J. (1996). Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Advances in Physics, 45(2), 87-146. doi:10.1080/00018739600101477
Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring
Joyce, T. B., Westwater, S. P., Goodhew, P. J., & Pritchard, R. E. (1996). Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring. Journal of Crystal Growth, 164(1-4), 371-376. doi:10.1016/0022-0248(96)00019-x
Sulphur doping of InGaAs using diethylsulphide
Petkos, G. M., Goodhew, P. J., & Joyce, T. B. (1996). Sulphur doping of InGaAs using diethylsulphide. Journal of Crystal Growth, 164(1-4), 415-419. doi:10.1016/0022-0248(96)00030-9
1995
A model for the distribution of misfit dislocations near epitaxial layer interfaces
Macpherson, G., Goodhew, P. J., & Beanland, R. (1995). A model for the distribution of misfit dislocations near epitaxial layer interfaces. Philosophical Magazine A, 72(6), 1531-1545. doi:10.1080/01418619508243929
On the development of misfit dislocation distributions in strained epitaxial layer interfaces
MacPherson, G., Beanland, R., & Goodhew, P. J. (1995). On the development of misfit dislocation distributions in strained epitaxial layer interfaces. Scripta Metallurgica et Materialia, 33(1), 123-128. doi:10.1016/0956-716x(95)00107-7
A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy
Beanland, R., Aindow, M., Joyce, T. B., Kidd, P., Lourenço, M., & Goodhew, P. J. (1995). A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy. Journal of Crystal Growth, 149(1-2), 1-11. doi:10.1016/0022-0248(94)00669-5
The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy
Joyce, T. B., Pfeffer, T. L., Bullough, T. J., Petkos, G., Goodhew, P. J., & Jones, A. C. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-n
1994
Dislocation behaviour at heterointerfaces in III–V semiconductors
Goodhew, P. J. (1994). Dislocation behaviour at heterointerfaces in III–V semiconductors. Journal of Physics and Chemistry of Solids, 55(10), 1107-1114. doi:10.1016/0022-3697(94)90128-7
Relaxation of InGaAs layers grown on (111)B GaAs
Sacedon, A., Calle, F., Alvarez, A. L., Calleja, E., Munoz, E., Beanland, R., & Goodhew, P. J. (1994). Relaxation of InGaAs layers grown on (111)B GaAs. Appl Phys Lett, 65, 1-4.
1990
The Operation of Transmission and Scanning Electron Microscopes
Chescoe, D., & Goodhew, P. J. (1990). The Operation of Transmission and Scanning Electron Microscopes (Vol. 20). Oxford: Oxford Science.
1988
Electron Microscopy and Analysis
Goodhew, P. J., & Humphreys, F. J. (1988). Electron Microscopy and Analysis. London: Taylor & Francis.
Light-element Analysis in the Transmission Electron Microscope: WEDX and EELS
Budd, P. M., & Goodhew, P. J. (1988). Light-element Analysis in the Transmission Electron Microscope: WEDX and EELS (Vol. 16). Oxford: Oxford Science.
Proceedings of the 9th European Congress on Electron Microscopy
Goodhew, P. J., & Dickinson, H. G. (Eds.) (1988). Proceedings of the 9th European Congress on Electron Microscopy. In Eurem 88 Vol. 1 (pp. i302). Bristol: Institute of Physics.
1985
Thin Foil Preparation for Electron Microscopy
Goodhew, P. J. (1985). Thin Foil Preparation for Electron Microscopy (Vol. 11). A. M. Glauert (Ed.), Amsterdam: Elsevier.
1984
Specimen Preparation for Transmission Electron Microscopy of Materials
Goodhew, P. J. (1984). Specimen Preparation for Transmission Electron Microscopy of Materials (Vol. 3). Oxford: Royal Microscopical Society.
1975
Electron Microscopy & Analysis
Goodhew, P. J. (1975). Electron Microscopy & Analysis. London: Taylor & Francis.
1972
Specimen Preparation in Materials Science
Goodhew, P. J. (1972). Specimen Preparation in Materials Science. Amsterdam: North-Holland.