Publications
2024
Atomic scale observation of threading dislocations in <i>α</i>-Ga2O3
Mullen, R., Roberts, J. W., Chalker, P. R., Oliver, R. A., Hourahine, B., & Massabuau, F. C. P. (2024). Atomic scale observation of threading dislocations in <i>α</i>-Ga2O3. AIP Advances, 14(11). doi:10.1063/5.0235005
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>
Nicol, D., Reynolds, S., Barr, K., Roberts, J. W., Jarman, J. J., Chalker, P. R., & Massabuau, F. C. (2024). Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>. physica status solidi (b). doi:10.1002/pssb.202300470
2023
Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>
Massabuau, F. C. -P., Adams, F., Nicol, D., Jarman, J. C., Frentrup, M., Roberts, J. W., . . . Oliver, R. A. (2023). Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. JAPANESE JOURNAL OF APPLIED PHYSICS, 62(SF). doi:10.35848/1347-4065/acbc28
Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>
Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., . . . Massabuau, F. C. -P. (2023). Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. APPLIED PHYSICS LETTERS, 122(6). doi:10.1063/5.0135103
2022
<p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>
Noureddine, I. N., Sedghi, N., Wrench, J. S., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2022). <p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. doi:10.1016/j.sse.2022.108349
(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. ECS Meeting Abstracts, MA2022-01(19), 1076. doi:10.1149/ma2022-01191076mtgabs
Atomic Layer Vs. Sol-Gel Deposited Coatings for Long Cycle-Life Li-Ion Battery Positive Electrodes
Powell, R., Lim, J., Neale, A. R., Chalker, P. R., & Hardwick, L. J. (2022). Atomic Layer Vs. Sol-Gel Deposited Coatings for Long Cycle-Life Li-Ion Battery Positive Electrodes. ECS Meeting Abstracts, MA2022-01(4), 515. doi:10.1149/ma2022-014515mtgabs
(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. In ECS Transactions Vol. 108 (pp. 69-79). The Electrochemical Society. doi:10.1149/10802.0069ecst
2021
Fabrication and modelling of MInM diodes with low turn-on voltage
Noureddine, I. N., Sedghi, N., Wrench, J., Chalker, P., Mitrovic, I. Z., & Hall, S. (2021). Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108053
Study of Ti contacts to corundum α-Ga2O3
Massabuau, F., Nicol, D., Adams, F., Jarman, J., Roberts, J., Kovacs, A., . . . Oliver, R. (n.d.). Study of Ti contacts to corundum α-Ga2O3. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/ac0d28
Oxides for Rectenna Technology
Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218
Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas
Tekin, S., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2021). Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics. doi:10.1016/j.sse.2021.108096
Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors
Massabuau, F., Roberts, J. W., Nicol, D., Edwards, P. R., McLelland, M., Dallas, G. L., . . . Chalker, P. R. (2021). Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors. In F. H. Teherani, D. C. Look, & D. J. Rogers (Eds.), Oxide-based Materials and Devices XII (pp. 20). SPIE. doi:10.1117/12.2588729
2020
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
Barthel, A., Roberts, J., Napari, M., Frentrup, M., Huq, T., Kovács, A., . . . Massabuau, F. (n.d.). Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering. Micromachines, 11(12), 1128. doi:10.3390/mi11121128
Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries
Liu, C., Zhao, Y., Yi, R., Wu, H., Yang, W., Li, Y., . . . Zhao, C. (2020). Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries. Electrochimica Acta, 358. doi:10.1016/j.electacta.2020.136923
Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm
Li, Q., Perrie, W., Potter, R., Allegre, O., Li, Z., Tang, Y., . . . Dearden, G. (2020). Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm. Journal of Physics D: Applied Physics, 53(36), 365301. doi:10.1088/1361-6463/ab8ed8
Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting
Tekin, S. B., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2020). Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365388
Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries
Zhao, Y., Liu, C., Yi, R., Li, Z., Chen, Y., Li, Y., . . . Zhao, C. (2020). Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries. Electrochimica Acta, 345, 136203. doi:10.1016/j.electacta.2020.136203
Ti alloyed $\alpha$-Ga$_2$O$_3$: route towards wide band gap engineering
Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$
Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>
Swallow, J. E. N., Vorwerk, C., Mazzolini, P., Vogt, P., Bierwagen, O., Karg, A., . . . Regoutz, A. (2020). Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>. CHEMISTRY OF MATERIALS, 32(19), 8460-8470. doi:10.1021/acs.chemmater.0c02465
(Invited) Band Line-up of High-k Oxides on GaN
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Meeting Abstracts, MA2020-01(15), 1043. doi:10.1149/ma2020-01151043mtgabs
Nb-doped TiO2 coatings developed by high power impulse magnetron sputtering-chemical vapor deposition hybrid deposition process
Kulczyk-Malecka, J., Donaghy, D., Delfour-Peyrethon, B., Werner, M., Chalker, P. R., Bradley, J. W., & Kelly, P. J. (2020). Nb-doped TiO2 coatings developed by high power impulse magnetron sputtering-chemical vapor deposition hybrid deposition process. Journal of Vacuum Science & Technology A, 38(3), 033410. doi:10.1116/6.0000118
(Invited) Band Line-up of High-k Oxides on GaN
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecst
Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric
Cai, Y., Liu, W., Cui, M., Sun, R., Liang, Y. C., Wen, H., . . . Zhao, C. (2020). Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59(4). doi:10.35848/1347-4065/ab7863
Ablation of amorphous Polyethy( ethyl)letone (PEEK) by a femtosecond Ti:sapphire laser
Li, Q., Perrie, W., Tang, Y., Allegre, O., Ho, J., Chalker, P., . . . Dearden, G. (2020). Ablation of amorphous Polyethy( ethyl)letone (PEEK) by a femtosecond Ti:sapphire laser. In LASER-BASED MICRO- AND NANOPROCESSING XIV Vol. 11268. doi:10.1117/12.2543735
Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion
Garmendia, X., Chalker, S., Bilton, M., Sutcliffe, C. J., & Chalker, P. R. (2020). Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion. Materialia, 100590. doi:10.1016/j.mtla.2020.100590
Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN
Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4
A study on ultrafast laser micromachining and optical properties of amorphous polyether(ether)ketone (PEEK) films
Li, Q., Perrie, W., Tang, Y., Allegre, O., Ho, J., Chalker, P., . . . Dearden, G. (2020). A study on ultrafast laser micromachining and optical properties of amorphous polyether(ether)ketone (PEEK) films. In Procedia CIRP Vol. 94 (pp. 840-845). Elsevier BV. doi:10.1016/j.procir.2020.09.113
2019
Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Roberts, J. W., Chalker, P. R., Ding, B., Oliver, R. A., Gibbon, J. T., Jones, L. A. H., . . . Massabuau, F. C. -P. (2019). Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528. doi:10.1016/j.jcrysgro.2019.125254
Atomic layer deposited α-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors
Moloney, J., Tesh, O., Singh, M., Roberts, J. W., Jarman, J. C., Lee, L. C., . . . Massabuau, F. C. -P. (2019). Atomic layer deposited α-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(47). doi:10.1088/1361-6463/ab3b76
3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode
Zhao, Y., Liu, C., Sun, Y., Yi, R., Cai, Y., Li, Y., . . . Zhao, C. (2019). 3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode. JOURNAL OF ALLOYS AND COMPOUNDS, 803, 505-513. doi:10.1016/j.jallcom.2019.06.302
Low temperature growth and optical properties of {\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices
Cai, Y., Wang, Y., Cui, M., Liu, W., Wen, H., Zhao, C., . . . Chalker, P. R. (2019). Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790844
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters
Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., . . . Zhao, C. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790909
Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries
Liu, C., Zhao, Y., Yi, R., Sun, Y., Li, Y., Yang, L., . . . Zhao, C. (2019). Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries. ELECTROCHIMICA ACTA, 306, 45-53. doi:10.1016/j.electacta.2019.03.071
AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers
Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (2019). AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers. In 2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA). doi:10.23919/icpe2019-ecceasia42246.2019.8796971
Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters
Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (n.d.). Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics. doi:10.7567/1347-4065/ab1313
Effect of HCl cleaning on InSb-Al2O3 MOS capacitors
Vavasour, O. J., Jefferies, R., Walker, M., Roberts, J. W., Meakin, N. R., Gammon, P. M., . . . Ashley, T. (2019). Effect of HCl cleaning on InSb-Al2O3 MOS capacitors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34(3). doi:10.1088/1361-6641/ab0331
2018
Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., . . . Zhao, C. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) (pp. 1-2). IEEE. doi:10.1109/edssc.2018.8487160
The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique
Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J. F., Marsland, J., . . . Robertson, J. (2018). The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39(7), 955-958. doi:10.1109/LED.2018.2833149
Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge. AIP ADVANCES, 8(6). doi:10.1063/1.5034459
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8(6). doi:10.1063/1.5034459
Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs
Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., . . . Houston, P. A. (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123(18). doi:10.1063/1.5027822
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., . . . Zhang, Y. (2018). The 2018 GaN power electronics roadmap. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51(16). doi:10.1088/1361-6463/aaaf9d
alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Roberts, J. W., Jarman, J. C., Johnstone, D. N., Midgley, P. A., Chalker, P. R., Oliver, R. A., & Massabuau, F. C. -P. (2018). alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire. JOURNAL OF CRYSTAL GROWTH, 487, 23-27. doi:10.1016/j.jcrysgro.2018.02.014
Elucidation of ALD MgZnO deposition processes using low energy ion scattering
Werner, M., Roberts, J. W., Potter, R. J., Dawson, K., & Chalker, P. R. (2018). Elucidation of ALD MgZnO deposition processes using low energy ion scattering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(2). doi:10.1116/1.5015958
A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
Jin, J., Zhang, J., Shaw, A., Kudina, V., Mitrovic, I., Wrench, J. S., . . . Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6). doi:10.1088/1361-6463/aaa4a2
Composition-variations and phase-segregation in InGaAsN grown by CBE
Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from https://www.webofscience.com/
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from https://www.webofscience.com/
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/9781351074636
2017
Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films
Mu, Y., Fang, Y., Zhao, C. Z., Zhao, C., Lu, Q., Qi, Y., . . . Chalker, P. R. (2017). Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(12), 2913-2921. doi:10.1109/TNS.2017.2768566
Atomic Layer Deposition of HfO<sub>2</sub> Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs
Liu, Q., Lam, S., Mu, Y., Zhao, C. Z., Zhao, Y., Fang, Y., . . . Chalker, P. R. (2017). Atomic Layer Deposition of HfO<sub>2</sub> Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs. In 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) (pp. 491-494). Retrieved from https://www.webofscience.com/
Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films
Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films. In AIP Conference Proceedings Vol. 1877. doi:10.1063/1.4999899
Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing
Lu, Q., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2017). Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing. In 4TH INTERNATIONAL CONFERENCE ON THE ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY (ICAMN IV 2016) Vol. 1877. doi:10.1063/1.4999875
Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111(9). doi:10.1063/1.4991879
Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics
Lu, Q., Qi, Y., Zhao, C. Z., Liu, C., Zhao, C., Taylor, S., & Chalker, P. R. (2017). Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17(3), 526-530. doi:10.1109/TDMR.2017.2731796
Atomic layer deposition of niobium nitride from different precursors
Pizzol, P., Roberts, J. W., Wrench, J., Malyshev, O. B., Valizadeh, R., & Chalker, P. R. (2017). Atomic layer deposition of niobium nitride from different precursors. In IPAC 2017 - Proceedings of the 8th International Particle Accelerator Conference (pp. 1094-1097).
Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 178-181). doi:10.1016/j.mee.2017.04.010
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 213-216). doi:10.1016/j.mee.2017.05.043
Investigation of the electrical performance of hfo<sub>2</sub> dielectrics deposited on passivated germanium substrates
Lu, Q., Mu, Y., Zhao, Y., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2017). Investigation of the electrical performance of hfo<sub>2</sub> dielectrics deposited on passivated germanium substrates. In 7TH INTERNATIONAL CONFERENCE ON KEY ENGINEERING MATERIALS (ICKEM 2017) Vol. 201. doi:10.1088/1757-899X/201/1/012029
Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices
Lu, Q., Qi, Y., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (n.d.). Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices. Vacuum. doi:10.1016/j.vacuum.2016.11.009
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178, 178-181. doi:10.1016/j.mee.2017.04.010
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043
The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver
Golrokhi, Z., Marshall, P. A., Romani, S., Rushworth, S., Chalker, P. R., & Potter, R. J. (2017). The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399, 123-131. doi:10.1016/j.apsusc.2016.11.192
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902-1-102902-4. doi:10.1063/1.4978033
Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements
Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(1), 673-682. doi:10.1109/TNS.2016.2633549
2016
Wider Memory Window in Ta2O5 RRAM by Doping
Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.
Atomic layer deposition of Nb-doped ZnO for thin film transistors
Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., . . . Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109(22). doi:10.1063/1.4968194
ZnO MESFETS for application to Intelligent Windows
Hall, S., Chalker, P. R., & Mitrovic, I. (2016). ZnO MESFETS for application to Intelligent Windows. Impact, 2016(2), 49-51. doi:10.21820/23987073.2016.2.49
Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO<sub>2</sub> and HfO<sub>2</sub> Dielectrics
Lu, Q., Qi, Y., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2016). Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO<sub>2</sub> and HfO<sub>2</sub> Dielectrics. In 2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE). Retrieved from https://www.webofscience.com/
Tunnel-Barrier Rectifiers for Optical Nantennas
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecst
Photochemical atomic layer deposition and etching
Chalker, P. R. (2016). Photochemical atomic layer deposition and etching. SURFACE & COATINGS TECHNOLOGY, 291, 258-263. doi:10.1016/j.surfcoat.2016.02.046
Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating
Werner, M., Gresty, N., Pickett, N., Chalker, P., Harris, J., Naasani, I., & Nasaani, I. (n.d.). WO2014140936-A2; US2014264196-A1; WO2014140936-A3; TW201503419-A; KR2015126961-A; CN105051152-A; EP2970762-A2, Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating.
Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam
Sutcliffe, C., & Chalker, P. R. (n.d.). WO2006131716-A2; AU2006256588-A1; EP1893372-A2; CA2609905-A1; JP2008546208-W; US2009117403-A1; US7754137-B2; WO2006131716-A3; EP1893372-B1; ES2477866-T3; CA2609905-C, Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam.
Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate
Chalker, P. R., & Heys, P. N. (n.d.). WO2009143452-A1; TW200949005-A, Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate.
Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process
Chalker, P. R., & Heys, P. N. (n.d.). WO2009143456-A1; TW200951242-A; EP2297379-A1; US2011165401-A1; CN102137952-A; JP2011525699-W; KR2012007949-A; CN102137952-B; US8613975-B2; SG166557-A1; SG166557-B; IL209378-A; TW467045-B1, Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process.
Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate
Chalker, P. R., Heys, P. N., & Paul Raymond, C. (n.d.). WO2009143460-A1; TW200949939-A; EP2281073-A1; KR2011017397-A; CN102066608-A; US2011151227-A1; JP2011521479-W; SG166589-A1; IL209379-A, Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate.
High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms
Chalker, P. R., & Heys, P. N. (n.d.). WO2009143458-A1; TW200949006-A, High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms.
Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component
Chalker, P., Sutcliffe, C., & Taylor, S. (n.d.). WO2010026426-A2; WO2010026426-A3; EP2324486-A2; US2011174970-A1; JP2012502420-W; HK1158359-A0; US8551388-B2, Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component.
New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device
Suchomel, M., Rosseinsky, M., Niu, H., Chalker, P., Yan, L., & Chalker, P. R. (n.d.). WO2010116184-A1; KR2011138274-A; CA2757921-A1; EP2417062-A1; US2012091541-A1; CN102482114-A; JP2012523361-W; HK1167256-A0; IN201107452-P4; SG175114-A1, New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device.
Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc
Totterdell, D. H. J., & Chalker, P. R. (n.d.). EP579405-A; GB2268583-A; EP579405-A1; US5365789-A; GB2268583-B, Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc.
Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate
Suchomel, M., Rosseinsky, M., Niu, H., Chalker, P., & Yan, L. (n.d.). WO2011124913-A1, Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate.
X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports
Chalker, P. R., & Paul, R. C. (n.d.). GB2288272-A; EP676772-A1; JP7294700-A; GB2288272-B; EP676772-B1; DE69500941-E, X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports.
(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. ECS Meeting Abstracts, MA2016-01(16), 1011. doi:10.1149/ma2016-01/16/1011
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications
Mu, Y., Zhao, C. Z., Qi, Y., Lam, S., Zhao, C., Lu, Q., . . . Chalker, P. R. (2016). Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372, 14-28. doi:10.1016/j.nimb.2016.01.035
Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from https://www.webofscience.com/
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
Roberts, J., Chalker, P., Lee, K. B., Houston, P., Cho, S. J., Thayne, I., . . . Humphreys, C. (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7). doi:10.1063/1.4942093
Silver ink formulations for sinter-free printing of conductive films
Black, K., Singh, J., Mehta, D., Sung, S., Sutcliffe, C. J., & Chalker, P. R. (2016). Silver ink formulations for sinter-free printing of conductive films. Scientific Reports, 6. doi:10.1038/srep20814
CVD deposition of Nb based materials for SRF cavities
Pizzol, P., Valizadeh, R., Malyshev, O. B., Stenning, G. B. G., Heil, T., Pattalwar, S., & Chalker, P. R. (2016). CVD deposition of Nb based materials for SRF cavities. In IPAC 2016 - Proceedings of the 7th International Particle Accelerator Conference (pp. 2241-2244).
2015
Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates
Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., . . . Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8(12), 8169-8182. doi:10.3390/ma8125454
Hafnia and alumina on sulphur passivated germanium
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017
Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors
Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from https://www.webofscience.com/
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecst
Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing
Lu, Q., Zhao, C., Mu, Y., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2015). Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing. MATERIALS, 8(8), 4829-4842. doi:10.3390/ma8084829
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993
Atomic-layer deposited thulium oxide as a passivation layer on germanium
Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121
Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes
Willcocks, A. M., Pugh, T., Cosham, S. D., Hamilton, J., Sung, S. L., Heil, T., . . . Johnson, A. L. (2015). Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes. INORGANIC CHEMISTRY, 54(10), 4869-4881. doi:10.1021/acs.inorgchem.5b00448
A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on GaN based metal oxide semiconductor capacitor
Cho, S. J., Roberts, J. W., Guiney, I., Li, X., Ternent, G., Floros, K., . . . Thayne, I. G. (2015). A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on GaN based metal oxide semiconductor capacitor. MICROELECTRONIC ENGINEERING, 147, 277-280. doi:10.1016/j.mee.2015.04.067
Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110
Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.
Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics
Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., & Potter, R. J. (2015). Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5(1). doi:10.1063/1.4905887
Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2
Ashraf, S., Aspinall, H. C., Bacsa, J., Chalker, P. R., Davies, H. O., Jones, A. C., . . . Wrench, J. S. (2015). Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2. Polyhedron, 85, 761-769. doi:10.1016/j.poly.2014.10.007
2014
Compositional tuning of atomic layer deposited MgZnO for thin film transistors
Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105(20). doi:10.1063/1.4902389
Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement
Zhao, C., Zhao, C. Z., Lu, Q., Yan, X., Taylor, S., & Chalker, P. R. (2014). Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. MATERIALS, 7(10), 6965-6981. doi:10.3390/ma7106965
Review on Non-Volatile Memory with High-<i>k</i> Dielectrics: Flash for Generation Beyond 32 nm
Zhao, C., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2014). Review on Non-Volatile Memory with High-<i>k</i> Dielectrics: Flash for Generation Beyond 32 nm. MATERIALS, 7(7), 5117-5145. doi:10.3390/ma7075117
Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition
King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174
(Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2014). (Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology. ECS Meeting Abstracts, MA2014-01(36), 1357. doi:10.1149/ma2014-01/36/1357
Interface Engineering Routes for a Future CMOS Ge-based Technology
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecst
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091
Energy Distribution of Positive Charges in Al2O3GeO2/Ge pMOSFETs
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Mitard, J., . . . Chalker, P. R. (2014). Energy Distribution of Positive Charges in Al2O3GeO2/Ge pMOSFETs. IEEE Electron Device Letters, 35(2), 160-162. doi:10.1109/LED.2013.2295516
Characterization of negative bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Zheng, X. F., . . . Chalker, P. R. (2014). Characterization of negative bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack. IEEE Transactions on Electron Devices, 61(5), 1307-1314. doi:10.1109/TED.2014.2314178
Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-<i>k</i> Layers
Zhao, C. Z., Taylor, S., Zhao, C., & Chalker, P. R. (n.d.). Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-<i>k</i> Layers. In Advanced Materials Research Vol. 1024 (pp. 331-334). Trans Tech Publications, Ltd.. doi:10.4028/www.scientific.net/amr.1024.331
2013
GaN-based radial heterostructure nanowires grown by MBE and ALD
Lari, L., Ross, I. M., Walther, T., Black, K., Cheze, C., Geelhaar, L., . . . Chalker, P. R. (2013). GaN-based radial heterostructure nanowires grown by MBE and ALD. In 18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) Vol. 471. doi:10.1088/1742-6596/471/1/012039
Dielectric relaxation of high-<i>k</i> oxides
Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. (2013). Dielectric relaxation of high-<i>k</i> oxides. NANOSCALE RESEARCH LETTERS, 8. doi:10.1186/1556-276X-8-456
Impact of Cerium Oxide's Grain Size for Dielectric Relaxation
Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, P., & King, P. (2013). Impact of Cerium Oxide's Grain Size for Dielectric Relaxation. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 57-60). Retrieved from https://www.webofscience.com/
Radiation Response Analyzer of Semiconductor Dies
Mu, Y., Zhao, C., Su, S., Zhao, Y., Mitrovic, I., Taylor, S., & Chalker, P. (2013). Radiation Response Analyzer of Semiconductor Dies. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 682-685). Retrieved from https://www.webofscience.com/
Interface engineering of Ge using thulium oxide: Band line-up study
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. Microelectronic Engineering, 109, 204-207. doi:10.1016/j.mee.2013.03.160
Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition
Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032
Towards understanding hole traps and NBTI of Ge/GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> structure
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Duan, M., Zhang, W., . . . Chalker, P. (2013). Towards understanding hole traps and NBTI of Ge/GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> structure. MICROELECTRONIC ENGINEERING, 109, 43-45. doi:10.1016/j.mee.2013.03.018
Grain size dependence of dielectric relaxation in cerium oxide as high-<i>k</i> layer
Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, P., & King, P. (2013). Grain size dependence of dielectric relaxation in cerium oxide as high-<i>k</i> layer. NANOSCALE RESEARCH LETTERS, 8. doi:10.1186/1556-276X-8-172
Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states
Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544
Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
Chalker, P. R., Marshall, P. A., Romani, S., Roberts, J. W., Irvine, S. J. C., Lamb, D. A., . . . Williams, P. A. (2013). Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(1). doi:10.1116/1.4765642
Atomic layer deposition of Ti-HfO<sub>2</sub> dielectrics
Werner, M., King, P. J., Hindley, S., Romani, S., Mather, S., Chalker, P. R., . . . van den Berg, J. A. (2013). Atomic layer deposition of Ti-HfO<sub>2</sub> dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(1). doi:10.1116/1.4748570
2012
Dielectric Relaxation of Lanthanide-based Ternary Oxides
Zhao, C. Z., Tao, J., Zhao, C., Werner, M., Taylor, S., & Chalker, P. R. (2012). Dielectric Relaxation of Lanthanide-based Ternary Oxides. In 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) (pp. 89-92). Retrieved from https://www.webofscience.com/
Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stack
Benbakhti, B., Zhang, J. F., Ji, Z., Zhang, W., Mitard, J., Kaczer, B., . . . Chalker, P. (2012). Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stack. IEEE ELECTRON DEVICE LETTERS, 33(12), 1681-1683. doi:10.1109/LED.2012.2218565
Atomic layer deposition of anatase TiO<sub>2</sub> coating on silica particles: growth, characterization and evaluation as photocatalysts for methyl orange degradation and hydrogen production
Williams, P. A., Ireland, C. P., King, P. J., Chater, P. A., Boldrin, P., Palgrave, R. G., . . . Rosseinsky, M. J. (2012). Atomic layer deposition of anatase TiO<sub>2</sub> coating on silica particles: growth, characterization and evaluation as photocatalysts for methyl orange degradation and hydrogen production. JOURNAL OF MATERIALS CHEMISTRY, 22(38), 20203-20209. doi:10.1039/c2jm33446a
Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission
Chalker, P. R., Marshall, P. A., King, P. J., Dawson, K., Romani, S., Williams, P. A., . . . Rosseinsky, M. J. (2012). Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission. JOURNAL OF MATERIALS CHEMISTRY, 22(25), 12824-12829. doi:10.1039/c2jm31391j
Extrinsic and Intrinsic Frequency Dispersion of High-<i>k</i> Materials in Capacitance-Voltage Measurements
Tao, J., Zhao, C. Z., Zhao, C., Taechakumput, P., Werner, M., Taylor, S., & Chalker, P. R. (2012). Extrinsic and Intrinsic Frequency Dispersion of High-<i>k</i> Materials in Capacitance-Voltage Measurements. MATERIALS, 5(6), 1005-1032. doi:10.3390/ma5061005
High molecular weight soft segment based polyethylene shape memory polymers
Ahmad, M., Luo, J., Xu, B., Purnawali, H., King, P., Chalker, P., . . . Miraftab, M. (2012). High molecular weight soft segment based polyethylene shape memory polymers. World Journal of Engineering, 9(3), 179-186. doi:10.1260/1708-5284.9.3.179
Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Chen, S. (2012). Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors. JOURNAL OF NANOMATERIALS, 2012. doi:10.1155/2012/891079
Making shape memory polymers reprocessable and reusable by a simple chemical method
Ahmad, M., Luo, J. K., Purnawali, H., Huang, W. M., King, P. J., Chalker, P. R., . . . Geng, J. (2012). Making shape memory polymers reprocessable and reusable by a simple chemical method. JOURNAL OF MATERIALS CHEMISTRY, 22(17), 8192-8194. doi:10.1039/c2jm30489a
Advanced CMOS Gate Stack: Present Research Progress
Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. R. (2012). Advanced CMOS Gate Stack: Present Research Progress. ISRN Nanotechnology, 2012, 1-35. doi:10.5402/2012/689023
Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models
Zhao, C., Zhao, C. Z., Tao, J., Werner, M., Taylor, S., & Chalker, P. R. (2012). Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models. JOURNAL OF NANOMATERIALS, 2012. doi:10.1155/2012/241470
Densification characteristics of chromia/alumina castables by particle size distribution
Zhao, J., Kim, T., Kim, G., Hwang, K., & Bae, D. (2012). Densification characteristics of chromia/alumina castables by particle size distribution. NANOSCALE RESEARCH LETTERS, 7, 1-4. doi:10.1186/1556-276X-7-8
Preparation of TiO<sub>2</sub> nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells
Lee, C. H., Rhee, S. W., & Choi, H. W. (2012). Preparation of TiO<sub>2</sub> nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells. NANOSCALE RESEARCH LETTERS, 7. doi:10.1186/1556-276X-7-48
'Ce doped hafnium oxide on silicon'
Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films
Chalker, P. R., Marshall, P. A., Romani, S., Rosseinsky, M. J., Rushworth, S., Williams, P. A., . . . Ridealgh, J. (2011). Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films. In TRANSPARENT CONDUCTING OXIDES AND APPLICATIONS Vol. 1315 (pp. 39-44). doi:10.1557/opl.2011.711
Making shape memory polymers reprocessable and reusable by a simple chemical method (vol 22, pg 8192, 2012)
Ahmad, M., Luo, J. K., Purnawali, H., Huang, W. M., King, P. J., Chalker, P. R., . . . Geng, J. (2012). Making shape memory polymers reprocessable and reusable by a simple chemical method (vol 22, pg 8192, 2012). JOURNAL OF MATERIALS CHEMISTRY, 22(48), 25493. Retrieved from https://www.webofscience.com/
Ternary Pt-Ru-SnO<sub>2</sub> hybrid architectures: unique carbon-mediated 1-D configuration and their electrocatalytic activity to methanol oxidation (vol 22, pg 7104, 2012)
Yang, S., Zhao, C., Ge, C., Dong, X., Liu, X., Liu, Y., . . . Li, Z. (2012). Ternary Pt-Ru-SnO<sub>2</sub> hybrid architectures: unique carbon-mediated 1-D configuration and their electrocatalytic activity to methanol oxidation (vol 22, pg 7104, 2012). JOURNAL OF MATERIALS CHEMISTRY, 22(48), 25489. Retrieved from https://www.webofscience.com/
2011
Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO<sub>2</sub>
Aspinall, H. C., Bacsa, J., Jones, A. C., Wrench, J. S., Black, K., Chalker, P. R., . . . Odedra, R. (2011). Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO<sub>2</sub>. Inorganic Chemistry, 50(22), 11644-11652. doi:10.1021/ic201593s
Metal Organic Chemical Vapour Deposition of Vertically Aligned ZnO Nanowires Using Oxygen Donor Adducts
Hindley, S., Jones, A. C., Ashraf, S., Bacsa, J., Steiner, A., Chalker, P. R., . . . Odedra, R. (2011). Metal Organic Chemical Vapour Deposition of Vertically Aligned ZnO Nanowires Using Oxygen Donor Adducts. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 11(9), 8294-8301. doi:10.1166/jnn.2011.5038
CuO/Ta<sub>2</sub>O<sub>5</sub> core/shell nanoparticles produced by arc-discharge in water
Delaportas, D., Svarnas, P., Alexandrou, I., Georga, S. N., Krontiras, C. A., Xanthopoulos, N. I., . . . Chalker, P. R. (2011). CuO/Ta<sub>2</sub>O<sub>5</sub> core/shell nanoparticles produced by arc-discharge in water. MATERIALS LETTERS, 65(15-16), 2337-2340. doi:10.1016/j.matlet.2011.05.044
Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires
Lari, L., Walther, T., Gass, M. H., Geelhaar, L., Cheze, C., Riechert, H., . . . Chalker, P. R. (2011). Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires. JOURNAL OF CRYSTAL GROWTH, 327(1), 27-34. doi:10.1016/j.jcrysgro.2011.06.004
Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
Geelhaar, L., Cheze, C., Jenichen, B., Brandt, O., Pfueller, C., Muench, S., . . . Riechert, H. (2011). Properties of GaN Nanowires Grown by Molecular Beam Epitaxy. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 17(4), 878-888. doi:10.1109/JSTQE.2010.2098396
SrHf<sub>0.67</sub>Ti<sub>0.33</sub>O<sub>3</sub> high-k films deposited on Si by pulsed laser deposition
Yan, L., Xu, Z. L., Grygiel, C., McMitchell, S. R. C., Suchomel, M. R., Bacsa, J., . . . Rosseinsky, M. J. (2011). SrHf<sub>0.67</sub>Ti<sub>0.33</sub>O<sub>3</sub> high-k films deposited on Si by pulsed laser deposition. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 104(1), 447-451. doi:10.1007/s00339-011-6257-8
SrHfO<sub>3</sub> Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition
Black, K., Werner, M., Rowlands-Jones, R., Chalker, P. R., & Rosseinsky, M. J. (2011). SrHfO<sub>3</sub> Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition. CHEMISTRY OF MATERIALS, 23(10), 2518-2520. doi:10.1021/cm200315u
Cation ordering within the perovskite block of a six-layer Ruddlesden-Popper oxide from layer-by-layer growth - artificial interfaces in complex unit cells
Yan, L., Niu, H. J., Duong, G. V., Suchomel, M. R., Bacsa, J., Chalker, P. R., . . . Rosseinsky, M. J. (2011). Cation ordering within the perovskite block of a six-layer Ruddlesden-Popper oxide from layer-by-layer growth - artificial interfaces in complex unit cells. CHEMICAL SCIENCE, 2(2), 261-272. doi:10.1039/c0sc00482k
Effect of deposition temperature on the properties of CeO<sub>2</sub> films grown by atomic layer deposition
King, P. J., Werner, M., Chalker, P. R., Jones, A. C., Aspinall, H. C., Basca, J., . . . Heys, P. N. (2011). Effect of deposition temperature on the properties of CeO<sub>2</sub> films grown by atomic layer deposition. THIN SOLID FILMS, 519(13), 4192-4195. doi:10.1016/j.tsf.2011.02.025
Synthesis and Characterization of Polyurethane-Based Shape-Memory Polymers for Tailored <i>T</i><sub>g</sub> around Body Temperature for Medical Applications
Ahmad, M., Luo, J., Xu, B., Purnawali, H., King, P. J., Chalker, P. R., . . . Miraftab, M. (2011). Synthesis and Characterization of Polyurethane-Based Shape-Memory Polymers for Tailored <i>T</i><sub>g</sub> around Body Temperature for Medical Applications. MACROMOLECULAR CHEMISTRY AND PHYSICS, 212(6), 592-602. doi:10.1002/macp.201000540
MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc
Ashraf, S., Jones, A. C., Bacsa, J., Steiner, A., Chalker, P. R., Beahan, P., . . . Heys, P. N. (2011). MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc. CHEMICAL VAPOR DEPOSITION, 17(1-3), 45-53. doi:10.1002/cvde.201006881
Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct
Kanjolia, R., Jones, A. C., Ashraf, S., Bacsa, J., Black, K., Chalker, P. R., . . . Heys, P. N. (2011). Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct. JOURNAL OF CRYSTAL GROWTH, 315(1), 292-296. doi:10.1016/j.jcrysgro.2010.09.016
Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Jones, A. C., & Zhao, C. (2011). Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient. NANOSCALE RESEARCH LETTERS, 6. doi:10.1007/s11671-010-9782-z
2010
Liquid injection atomic layer deposition of silver nanoparticles
Chalker, P. R., Romani, S., Marshall, P. A., Rosseinsky, M. J., Rushworth, S., & Williams, P. A. (2010). Liquid injection atomic layer deposition of silver nanoparticles. NANOTECHNOLOGY, 21(40). doi:10.1088/0957-4484/21/40/405602
A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc
Black, K., Chalker, P. R., Jones, A. C., King, P. J., Roberts, J. L., & Heys, P. N. (2010). A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc. CHEMICAL VAPOR DEPOSITION, 16(1-3), 106-111. doi:10.1002/cvde.200906831
Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO<sub>2</sub>
Black, K., Jones, A. C., Bacsa, J., Chalker, P. R., Marshall, P. A., Davies, H. O., . . . Critchlow, G. W. (2010). Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO<sub>2</sub>. CHEMICAL VAPOR DEPOSITION, 16(1-3), 93-99. doi:10.1002/cvde.200906818
A-Site Order Control in Mixed Conductor NdBaCo<sub>2</sub>O<sub>5+δ</sub> Films through Manipulation of Growth Kinetics
Grygiel, C., McMitchell, S. R. C., Xu, Z., Yan, L., Niu, H. J., Giap, D., . . . Rosseinsky, M. J. (2010). A-Site Order Control in Mixed Conductor NdBaCo<sub>2</sub>O<sub>5+δ</sub> Films through Manipulation of Growth Kinetics. CHEMISTRY OF MATERIALS, 22(6), 1955-1957. doi:10.1021/cm9037022
GaN, AlGaN, HfO<sub>2</sub> based radial heterostructure nanowires
Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). GaN, AlGaN, HfO<sub>2</sub> based radial heterostructure nanowires. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 209. doi:10.1088/1742-6596/209/1/012011
Linear Ion Trap Fabricated Using Rapid Manufacturing Technology
Clare, A. T., Gao, L., Brkic, B., Chalker, P. R., & Taylor, S. (2010). Linear Ion Trap Fabricated Using Rapid Manufacturing Technology. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 21(2), 317-322. doi:10.1016/j.jasms.2009.10.020
The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct
Black, K., Jones, A. C., Alexandrou, I., Heys, P. N., & Chalker, P. R. (2010). The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct. NANOTECHNOLOGY, 21(4). doi:10.1088/0957-4484/21/4/045701
'GaN, AlGaN, HfO2 based radial heterostructure nanowires'
Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). 'GaN, AlGaN, HfO2 based radial heterostructure nanowires'. Journal of Physics: Conference Series, 209(1).
2009
MOCVD and ALD of CeO<sub>2</sub> Thin Films using a Novel Monomeric Ce<SUP>IV</SUP> Alkoxide Precursor
Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO<sub>2</sub> Thin Films using a Novel Monomeric Ce<SUP>IV</SUP> Alkoxide Precursor. CHEMICAL VAPOR DEPOSITION, 15(10-12), 259-+. doi:10.1002/cvde.200904279
Structural properties of wurtzitelike ScGaN films grown by NH<sub>3</sub>-molecular beam epitaxy
Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., . . . Humphreys, C. J. (2009). Structural properties of wurtzitelike ScGaN films grown by NH<sub>3</sub>-molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(11). doi:10.1063/1.3268466
High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure
Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure. In 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 628-630). IEEE. doi:10.1109/ipfa.2009.5232565
Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide
Werner, M., Zhao, C. Z., Taylor, S., Chalker, P. R., Black, K., & Gaskell, J. (2009). Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 625-627. doi:10.1109/ipfa.2009.5232568
Deposition of TiO<sub>2</sub> Films by Liquid Injection ALD Using New Titanium 2,5-dimethylpyrrolyl Complexes
Davies, H. O., Jones, A. C., Black, K., Bacsa, J., Chalker, P. R., Marshall, P. A., . . . O'Brien, P. (2009). Deposition of TiO<sub>2</sub> Films by Liquid Injection ALD Using New Titanium 2,5-dimethylpyrrolyl Complexes. EUROCVD 17 / CVD 17, 25(8), 813-819. doi:10.1149/1.3207671
Deposition of TiO<sub>2</sub> Thin Films by Liquid Injection ALD Using New 2,5-Dimethylpyrrolyl Titanium-Alkylamide and -Alkoxide Precursors
Davies, H., Black, K., Jones, A., Bacsa, J., Chalker, P., Marshall, P. A., . . . Afzaal, M. (2009). Deposition of TiO<sub>2</sub> Thin Films by Liquid Injection ALD Using New 2,5-Dimethylpyrrolyl Titanium-Alkylamide and -Alkoxide Precursors. ECS Meeting Abstracts, MA2009-02(34), 2588. doi:10.1149/ma2009-02/34/2588
Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology
Brkic, B., France, N., Clare, A. T., Sutcliffe, C. J., Chalker, P. R., & Taylor, S. (2009). Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 20(7), 1359-1365. doi:10.1016/j.jasms.2009.03.025
Estimate of dielectric density using spectroscopic ellipsometry
Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. MICROELECTRONIC ENGINEERING, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084
High permittivity SrHf<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub> films grown by pulsed laser deposition
Yan, L., Suchomel, M. R., Grygiel, C., Niu, H. J., McMitchell, S. R. C., Bacsa, J., . . . Rosseinsky, M. J. (2009). High permittivity SrHf<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub> films grown by pulsed laser deposition. APPLIED PHYSICS LETTERS, 94(23). doi:10.1063/1.3151815
Dielectric relaxation of lanthanum doped zirconium oxide
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Murray, R. T., Gaskell, J. M., & Jones, A. C. (2009). Dielectric relaxation of lanthanum doped zirconium oxide. JOURNAL OF APPLIED PHYSICS, 105(4). doi:10.1063/1.3078038
Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2009). Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications. In L. M. Hitchman, & A. C. Jones (Eds.), Chemical Vapour Deposition: Precursors and Processes (pp. 357-412). London: Royal Society of Chemistry.
Customised layer deposition for chemical reactor applications
Singh, J., Hauser, C., Chalker, P. R., Sutcliffe, C. J., Clare, A. T., & Dunschen, M. (2009). Customised layer deposition for chemical reactor applications. In 20th Annual International Solid Freeform Fabrication Symposium, SFF 2009 (pp. 819-830).
Frequency dispersion and dielectric relaxation of La<sub>2</sub>Hf<sub>2</sub>O<sub>7</sub>
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2009). Frequency dispersion and dielectric relaxation of La<sub>2</sub>Hf<sub>2</sub>O<sub>7</sub>. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 333-337. doi:10.1116/1.3043535
Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing
Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904
High-<i>k</i> materials and their response to gamma ray radiation
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-<i>k</i> materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848
MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor
Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor. Chemical Vapour Deposition, 15, 1-3.
Rapid prototyping methodologies for ceramic micro components
Chalker, P. R., Berggreen, K. M., Clare, A. T., Singh, J., & Sutcliffe, C. J. (2009). Rapid prototyping methodologies for ceramic micro components. In SMART MATERIALS FOR SMART DEVICES AND STRUCTURES Vol. 154 (pp. 1-7). doi:10.4028/www.scientific.net/SSP.154.1
2008
Permittivity enhancement of hafnium dioxide high-κ films by cerium doping
Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-κ films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059
Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., . . . Riechert, H. (2008). Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(11), 2589-2592. doi:10.1002/pssa.200780132
Annealing of neodymium aluminate high-κ dielectric deposited by liquid injection MOCVD using single source heterometallic alkoxide precursor
Taechakumput, P., Ce, Z. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). Annealing of neodymium aluminate high-κ dielectric deposited by liquid injection MOCVD using single source heterometallic alkoxide precursor. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 322-326).
High-k materials and their response to X-ray radiation
Zhao, C. Z., Taylor, S., Taechakumput, P., Werner, M., Chalker, P. R., Huang, X. L., . . . Jones, A. C. (2008). High-k materials and their response to X-ray radiation. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 27-32).
Origin of frequency dispersion in high-k dielectrics
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Drobnis, M. (2008). Origin of frequency dispersion in high-k dielectrics. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 20-26).
Deposition of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films by liquid injection MOCVD and ALD using <i>ansa</i>-metallocene zirconium and hafnium precursors
Black, K., Aspinall, H. C., Jones, A. C., Przybylak, K., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2008). Deposition of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films by liquid injection MOCVD and ALD using <i>ansa</i>-metallocene zirconium and hafnium precursors. JOURNAL OF MATERIALS CHEMISTRY, 18(38), 4561-4571. doi:10.1039/b807205a
Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Ca<sub>n+1</sub>Mn<sub>n</sub>O<sub>3n+1</sub>
Wang, P., Bleloch, A. L., Yan, L., Niu, H. J., Chalker, P. R., Rosseinsky, M. J., & Goodhew, P. J. (2008). Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Ca<sub>n+1</sub>Mn<sub>n</sub>O<sub>3n+1</sub>. EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007, 126. doi:10.1088/1742-6596/126/1/012050
Nanoscale EELS and EDX Analyses of GaN Nanowires and GaN/AlGaN Radial Heterostructure Nanowires
Lari, L., Murray, R. T., Gass, M. H., Bullough, T., Chalker, P. R., Chèze, C., . . . Riechert, H. (2008). Nanoscale EELS and EDX Analyses of GaN Nanowires and GaN/AlGaN Radial Heterostructure Nanowires. Microscopy and Microanalysis, 14(S2), 1394-1395. doi:10.1017/s1431927608082809
Selective laser melting of high aspect ratio 3D nickel–titanium structures two way trained for MEMS applications
Clare, A. T., Chalker, P. R., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2008). Selective laser melting of high aspect ratio 3D nickel–titanium structures two way trained for MEMS applications. International Journal of Mechanics and Materials in Design, 4(2), 181-187. doi:10.1007/s10999-007-9032-4
Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth
Lari, L., Murray, R. T., Bullough, T. J., Chalker, P. R., Gass, M., Cheze, C., . . . Riechert, H. (2008). Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40(7), 2457-2461. doi:10.1016/j.physe.2007.10.003
Selective laser sintering of barium titanate-polymer composite films
Clare, A. T., Chalker, P. R., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2008). Selective laser sintering of barium titanate-polymer composite films. JOURNAL OF MATERIALS SCIENCE, 43(9), 3197-3202. doi:10.1007/s10853-007-2396-x
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si
Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., Murray, R. T., Joyce, T. B., & Rushworth, S. A. (2008). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. JOURNAL OF CRYSTAL GROWTH, 310(5), 1010-1014. doi:10.1016/j.jcrysgro.2007.11.131
ChemInform Abstract: Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD.
Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., . . . Heys, P. N. (2008). ChemInform Abstract: Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD.. ChemInform, 39(9). doi:10.1002/chin.200809016
ChemInform Abstract: Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors.
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2008). ChemInform Abstract: Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors.. ChemInform, 39(7). doi:10.1002/chin.200807212
'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors'
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). 'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors'. In ISTC2008 (pp. 324-326). Shanghai: ECS.
'Effects of annealing ambient on dielectric relaxation of La doped ZrO2'
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Effects of annealing ambient on dielectric relaxation of La doped ZrO2'. In WODIM 2008 (pp. 235-236). Berlin: AVS.
'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2'
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2'. In WODIM 2008 (pp. 237-238). Berlin: AVS.
'High-k Materials and Their Response to Gamma Ray Radiation',
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.
Chapter 8
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2008). Chapter 8. In Chemical Vapour Deposition (pp. 357-412). Royal Society of Chemistry (RSC). doi:10.1039/9781847558794-00357
Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2008). Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications. In CHEMICAL VAPOUR DEPOSITION: PRECURSORS, PROCESSES AND APPLICATIONS (pp. 357-412). doi:10.1039/9781847558794-00357
EDX and linescan modelling for core/shell GaN/AlGaN nanowire analysis
Lari, L., Murray, R. T., Bullough, T., Chalker, P. R., Chèze, C., Geelhaar, L., & Riechert, H. (n.d.). EDX and linescan modelling for core/shell GaN/AlGaN nanowire analysis. In EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany (pp. 143-144). Springer Berlin Heidelberg. doi:10.1007/978-3-540-85226-1_72
Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy
Lari, L., Murray, R. T., Gass, M., Bullough, T. J., Chalker, P. R., Cheze, C., . . . Riechert, H. (2008). Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 120, 221-+. Retrieved from https://www.webofscience.com/
2007
Deposition of Lanthanum Zirconium Oxide High-<i>k</i> Films by Liquid Injection ALD and MOCVD
Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., . . . Heys, P. N. (2007). Deposition of Lanthanum Zirconium Oxide High-<i>k</i> Films by Liquid Injection ALD and MOCVD. CHEMICAL VAPOR DEPOSITION, 13(12), 684-690. doi:10.1002/cvde.200706637
Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors. Chemical Vapor Deposition, 13(11), 609-617. doi:10.1002/cvde.200706589
Growth of HfO<sub>2</sub> by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO<sub>2</sub> by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors. CHEMICAL VAPOR DEPOSITION, 13(11), 609-617. doi:10.1002/cvde.200706589
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
Moram, M. A., Kappers, M. J., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. JOURNAL OF CRYSTAL GROWTH, 308(2), 302-308. doi:10.1016/j.jcrysgro.2007.09.009
Liquid injection MOCVD and ALD of ZrO<sub>2</sub> using zr-cyclopentadienyl precursors
Gaskell, J. M., Jones, A. C., Black, K., Chalker, P. R., Leese, T., Kingsley, A., . . . Heys, P. N. (2007). Liquid injection MOCVD and ALD of ZrO<sub>2</sub> using zr-cyclopentadienyl precursors. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9095-9098. doi:10.1016/j.surfcoat.2007.04.098
Molecular design of improved precursors for the MOCVD of oxides used in microelectronics
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2007). Molecular design of improved precursors for the MOCVD of oxides used in microelectronics. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9046-9054. doi:10.1016/j.surfcoat.2007.04.118
Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition. APPLIED PHYSICS LETTERS, 91(11). doi:10.1063/1.2784956
Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors
Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556
Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition.
Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition.. ChemInform, 38(34). doi:10.1002/chin.200734221
Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand
Aspinall, H. C., Bickley, J. F., Gaskell, J. M., Jones, A. C., Labat, G., Chalker, P. R., & Williams, P. A. (2007). Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand. INORGANIC CHEMISTRY, 46(15), 5852-5860. doi:10.1021/ic061382y
Unit-cell-level assembly of metastable transition-metal oxides by pulsed-laser deposition
Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit-cell-level assembly of metastable transition-metal oxides by pulsed-laser deposition. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 46(24), 4539-4542. doi:10.1002/anie.200700119
Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition
Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition. Angewandte Chemie, 119(24), 4623-4626. doi:10.1002/ange.200700119
Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures
Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025
Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition
Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052
Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition
Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035
Photochemistry of refractive index structures in poly(methyl methacrylate) by femtosecond laser irradiation
Baum, A., Scully, P. J., Basanta, M., Thomas, C. L. P., Fielden, P. R., Goddard, N. J., . . . Chalker, P. R. (2007). Photochemistry of refractive index structures in poly(methyl methacrylate) by femtosecond laser irradiation. OPTICS LETTERS, 32(2), 190-192. doi:10.1364/OL.32.000190
'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications'
Buiu, O., Werner, M., Davey, W. M., Lu, Y., Hall, S., & Chalker, P. (2007). 'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications'. In International Conference on Spectroellipsometry (pp. xx). Marseilles: xx.
Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition. Applied Physics Letters, 91(11), 112912.
Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Chèze, C., . . . Riechert, H. (2007). Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate. MRS Proceedings, 1026. doi:10.1557/proc-1026-c01-05
2006
Selective Laser Melting
Sutcliffe, C., Fox, P., & Chalker, P. (2006). Selective Laser Melting.
Transition from electron accumulation to depletion at InGaN surfaces
Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976
Spectroellipsometric assessment of HfO<sub>2</sub> thin films
Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215
Microstructure of epitaxial scandium nitride films grown on silicon
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure of epitaxial scandium nitride films grown on silicon. APPLIED SURFACE SCIENCE, 252(24), 8385-8387. doi:10.1016/j.apsusc.2005.11.069
Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Przybylak, S., Chalker, P. R., Black, K., . . . Critchlow, G. W. (2006). Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 16(39), 3854-3860. doi:10.1039/b609129f
Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., & Chalker, P. R. (2006). Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. JOURNAL OF APPLIED PHYSICS, 100(2). doi:10.1063/1.2217106
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301
MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors. ChemInform, 37(21). doi:10.1002/chin.200621220
Materials Research Society Symposium Proceedings: Preface
Bull, S. J., Chalker, P. R., Chen, S. C., Meng, W. J., & Maboudian, R. (2006). Materials Research Society Symposium Proceedings: Preface. In Materials Research Society Symposium Proceedings Vol. 890.
Microstructure and strain-free lattice parameters of Sc<sub>x</sub>Ga<sub>1-x</sub>N films
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure and strain-free lattice parameters of Sc<sub>x</sub>Ga<sub>1-x</sub>N films. In GaN, AIN, InN and Related Materials Vol. 892 (pp. 723-727). Retrieved from https://www.webofscience.com/
Selective laser melting of high aspect ratio 3D nickel-titanium structures for MEMS applications.
Chalker, P. R., Clare, A., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2006). Selective laser melting of high aspect ratio 3D nickel-titanium structures for MEMS applications.. SURFACE ENGINEERING FOR MANUFACTURING APPLICATIONS, 890, 93-+. Retrieved from https://www.webofscience.com/
Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films
Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. JOURNAL OF APPLIED PHYSICS, 99(10). doi:10.1063/1.2198936
MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023
Mapping the effective mass of electrons in III-V semiconductor quantum confined structures
Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312
New Precursors for the MOCVD and ALD of Rare Earth Oxides
Jones, A., & Chalker, P. (2006). New Precursors for the MOCVD and ALD of Rare Earth Oxides. ECS Meeting Abstracts, MA2005-02(13), 509. doi:10.1149/ma2005-02/13/509
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537
'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.
'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'
Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD)
Taechakumput, P., Taylor, S., Buiu, O., Ram, D. L., Potter, R. J., Chalker, P. R., & Jones, A. C. (2006). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD). In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 176-177). Santa Tecla - Catania: CNR - Italy.
Refractive Index Structures in Poly(methyl methacrylate) and Polymer Optical Fibre by Femtosecond Laser Irradiation
Baum, A., Perrie, W., Scully, P. J., Basanta, M., Thomas, C. L., Goddard, N. J., . . . Chalker, P. (2006). Refractive Index Structures in Poly(methyl methacrylate) and Polymer Optical Fibre by Femtosecond Laser Irradiation. In Optical Fiber Sensors (pp. TuE25). OSA. doi:10.1364/ofs.2006.tue25
Refractive index structures in poly(methyl methacrylate) and polymer optical fibre by femtosecond laser irradiation
Baum, A., Perrie, W., Scully, P. J., Basanta, M., Thomas, C. L. P., Goddard, N. J., . . . Chalker, P. R. (2006). Refractive index structures in poly(methyl methacrylate) and polymer optical fibre by femtosecond laser irradiation. In Optics InfoBase Conference Papers.
Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films
Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. Journal of Applied Physics, 99(103074), 103704.
2005
A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD
Potter, R. J., Awad, A., Chalker, P. R., Peng, W., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD. In Materials Research Society Symposium Proceedings Vol. 902 (pp. 1-6).
Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. MRS Online Proceedings Library, 892(1). doi:10.1557/proc-0892-ff28-07
Deposition of LaAlO<sub>3</sub> films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor
Manning, T. D., Loo, Y. F., Jones, A. C., Aspinall, H. C., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2005). Deposition of LaAlO<sub>3</sub> films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 15(33), 3384-3387. doi:10.1039/b507004j
Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384
Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389a
Recent developments in the MOCVD and ALD of rare earth oxides and silicates
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081
Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004)
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2005). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004). JOURNAL OF CRYSTAL GROWTH, 276(1-2), 333. doi:10.1016/j.jcrysgro.2005.01.093
Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques
Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.200406348
A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD
Potter, R., Awad, A., Chalker, P. R., Wang, P., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD. MRS Proceedings, 902. doi:10.1557/proc-0902-t02-02
CCDC 255507: Experimental Crystal Structure Determination
Loo, Y. F., O Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). CCDC 255507: Experimental Crystal Structure Determination. Cambridge Structural Database. doi:10.5517/cc8kw5v
CCDC 255508: Experimental Crystal Structure Determination
Loo, Y. F., O Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). CCDC 255508: Experimental Crystal Structure Determination. Cambridge Structural Database. doi:10.5517/cc8kw6w
Mapping of the effective electron mass in III-V semiconductors
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., Beanland, R., & Chalker, P. R. (2005). Mapping of the effective electron mass in III-V semiconductors. In Microscopy of Semiconducting Materials Vol. 107 (pp. 491-494). Retrieved from https://www.webofscience.com/
Selective laser melting of high aspect ratio 3D nickel – titanium structures for MEMS applications
Chalker, P., Clare, A., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2005). Selective laser melting of high aspect ratio 3D nickel – titanium structures for MEMS applications. MRS Proceedings, 890. doi:10.1557/proc-0890-y03-02
2004
Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109
Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor
Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310
Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor
Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313
Some recent developments in the MOCVD and ALD of high-κ dielectric oxides
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2004). Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525j
Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS
Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007
Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates
Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10
Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD
Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6
Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift
Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935
Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors
Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301
High Spatial Resolution Mapping of the Effective Mass in GaInNAs
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). High Spatial Resolution Mapping of the Effective Mass in GaInNAs. Microscopy and Microanalysis, 10(S02), 828-829. doi:10.1017/s1431927604881078
Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy. Microscopy and Microanalysis, 10(S02), 866-867. doi:10.1017/s143192760488108x
The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012
Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD.
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD.. ChemInform, 35(22). doi:10.1002/chin.200422024
Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition
Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424
Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lanthanum Alkoxide Precursor.
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lanthanum Alkoxide Precursor.. ChemInform, 35(15). doi:10.1002/chin.200415215
Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices
Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196
Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD. CHEMICAL VAPOR DEPOSITION, 10(2), 83-89. doi:10.1002/cvde.200306282
Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy
Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906
Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(1), 13-+. doi:10.1002/cvde.200304164
Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach
Roberts, J. L., Marshall, P. A., Jones, A. C., Chalker, P. R., Bickley, J. F., Williams, P. A., . . . Lindner, J. (2004). Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach. JOURNAL OF MATERIALS CHEMISTRY, 14(3), 391-395. doi:10.1039/b305665c
Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides
Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h
2003
Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor.
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor.. ChemInform, 34(52). doi:10.1002/chin.200352025
Growth of Hafnium Dioxide Thin Films by Liquid-Injection MOCVD Using Alkylamide and Hydroxylamide Precursors
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Taylor, S., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Hafnium Dioxide Thin Films by Liquid-Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Advanced Materials, 15(24), 309-314.
Growth of hafnium dioxide thin films by liquid-injection MOCVD using alkylamide and hydroxylamide precursors
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Taylor, S., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of hafnium dioxide thin films by liquid-injection MOCVD using alkylamide and hydroxylamide precursors. CHEMICAL VAPOR DEPOSITION, 9(6), 309-314. doi:10.1002/cvde.200306271
Deposition of high-<i>k</i> dielectric oxide films by liquid injection MOCVD
Jones, A. C., Williams, P. A., Chalker, P. R., Taylor, S., Zoolfakr, A., Smith, L. M., & McGraw, P. (2003). Deposition of high-<i>k</i> dielectric oxide films by liquid injection MOCVD. INTEGRATED FERROELECTRICS, 57, 1271-1277. doi:10.1080/714040784
Some recent developments in the metalorganic chemical vapour deposition of high-κ dielectric oxides
Chalker, P. R., & Jones, A. C. (2004). Some recent developments in the metalorganic chemical vapour deposition of high-κ dielectric oxides. In PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II Vol. 2003 (pp. 73-87). Retrieved from https://www.webofscience.com/
Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD using a Novel Praseodymium Alkoxide Precursor
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD using a Novel Praseodymium Alkoxide Precursor. Advanced Materials, 15(20), 235-238.
Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 9(5), 235-+. doi:10.1002/cvde.200304160
Development of improved precursors for the MOCVD of bismuth titanate
Williams, P. A., Jones, A. C., Tobin, N. L., Marshall, P. A., Chalker, P. R., Davies, H. O., & Smith, L. M. (2003). Development of improved precursors for the MOCVD of bismuth titanate. In FERROELECTRIC THIN FILMS XI Vol. 748 (pp. 105-110). Retrieved from https://www.webofscience.com/
LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<inf>2</inf>
Fogg, A. M., Chalker, P. R., Claridge, J. B., Darling, G. R., & Rosseinsky, M. J. (2003). LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<inf>2</inf>. Physical Review B - Condensed Matter and Materials Physics, 67(24). doi:10.1103/PhysRevB.67.245106
LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<sub>2</sub> -: art. no. 245106
Fogg, A. M., Chalker, P. R., Claridge, J. B., Darling, G. R., & Rosseinsky, M. J. (2003). LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<sub>2</sub> -: art. no. 245106. PHYSICAL REVIEW B, 67(24). doi:10.1103/PhysRevB.67.245106
Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum.
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum.. ChemInform, 34(15). doi:10.1002/chin.200315024
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X
Some recent developments in the chemical vapour deposition of electroceramic oxides
Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. Journal of Physics D: Applied Physics, 36(6), R53-R79. doi:10.1088/0022-3727/36/6/202
Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs
Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5
Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well
White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0
Optical properties of GaInNAs/GaAs quantum wells
Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5
Physical properties of diamond for thermistors and pressure transducers
Chalker, P. R., Johnston, C., & Werner, M. (2003). Physical properties of diamond for thermistors and pressure transducers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18(3), S113-S116. doi:10.1088/0268-1242/18/3/316
In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures
Akçay, N., Erol, A., Arikan, M., Mazzucato, S., Chalker, P. R., & Joyce, T. B. (2003). In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 96-98. doi:10.1049/ip-opt:20030043
Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethyisilyl)amido]lanthanum
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethyisilyl)amido]lanthanum. Advanced Materials, 15(1), 7-10.
Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum. CHEMICAL VAPOR DEPOSITION, 9(1), 7-+. doi:10.1002/cvde.200290009
Diamond thermistors and pressure transducers
Chalker, P. R., Johnston, C., & Werner, M. (2003). Diamond thermistors and pressure transducers. Semiconductor Science & Technology, 18(3), 113-116.
Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Marshall, P., Taylor, S., . . . Davies, H. O. (2003). Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Chem. Vapour Deposition, 9(6), 1-6.
Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors
Potter, R. J., Marshall, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Vehkamäki, M., . . . Smith, L. M. (2004). Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 97-108). Retrieved from https://www.webofscience.com/
Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors
Williams, P. A., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., Marshall, P. A., . . . Smith, L. M. (2004). Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 461-466). Retrieved from https://www.webofscience.com/
Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors
Williams, P. A., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., Marshall, P. A., . . . Smith, L. M. (2004). Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors. In FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Vol. 786 (pp. 233-238). Retrieved from https://www.webofscience.com/
Some recent developments in the chemical vapour deposition of electroceramic oxides
Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36(6), R80-R95. Retrieved from https://www.webofscience.com/
2002
Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> Thin Films.
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> Thin Films.. ChemInform, 33(43), 19. doi:10.1002/chin.200243019
HfO<sub>2</sub> and ZrO<sub>2</sub> alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition
Taylor, S., Williams, P. A., Roberts, J. L., Jones, A. C., & Chalker, P. R. (2002). HfO<sub>2</sub> and ZrO<sub>2</sub> alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition. ELECTRONICS LETTERS, 38(21), 1285-1286. doi:10.1049/el:20020801
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 13(9), 525-529. doi:10.1023/A:1019641611417
Topological analysis of defects in GaN epitaxial films
Pond, R. C., Huang, T. -S., Chalker, P., & Dimitrakopulos, G. (2002). Topological analysis of defects in GaN epitaxial films. Acta Crystallographica Section A Foundations of Crystallography, 58(s1), c373. doi:10.1107/s0108767302099890
Novel mononuclear alkoxide precursors for the MOCVD of ZrO<inf>2</inf> and HfO<inf>2</inf> thin films
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO<inf>2</inf> and HfO<inf>2</inf> thin films. Advanced Materials, 14(13-14), 163-170.
Novel mononuclear alkoxide precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films. CHEMICAL VAPOR DEPOSITION, 8(4), 163-170. doi:3.0.CO;2-V">10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-V
ChemInform Abstract: A First Transition Series Pseudotetrahedral Oxynitride Anion: Synthesis and Characterization of Ba<sub>2</sub>VO<sub>3</sub>N.
Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). ChemInform Abstract: A First Transition Series Pseudotetrahedral Oxynitride Anion: Synthesis and Characterization of Ba<sub>2</sub>VO<sub>3</sub>N.. ChemInform, 33(26). doi:10.1002/chin.200226009
Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers
Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309
A first transition series pseudotetrahedral oxynitride anion: synthesis and characterization of Ba(2)VO(3)N.
Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). A first transition series pseudotetrahedral oxynitride anion: synthesis and characterization of Ba(2)VO(3)N.. Journal of the American Chemical Society, 124(13), 3337-3342. doi:10.1021/ja0122896
A first transition series pseudotetrahedral oxynitride anion:: Synthesis and characterization of Ba<sub>2</sub>VO<sub>3</sub>N
Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). A first transition series pseudotetrahedral oxynitride anion:: Synthesis and characterization of Ba<sub>2</sub>VO<sub>3</sub>N. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 124(13), 3337-3342. doi:10.1021/ja0122896
Novel mononuclear zirconium and hafnium alkoxides;: improved precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub>
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides;: improved precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub>. JOURNAL OF MATERIALS CHEMISTRY, 12(2), 165-167. doi:10.1039/b109994a
' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films'
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). ' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films'. Chemical Vapor Deposition, 8(4), 163-170.
Chapter B4 3. Boron doping and characterisation
Johnston, C., Crossley, A., Werner, M., & Chalker, P. R. (2002). Chapter B4 3. Boron doping and characterisation. In EMIS (Ed.), Growth, Properties and Application of Diamond (Vol. 26, pp. 337-344). .: Electronic Materials Information Service.
Development of Improved Precursors for the MOCVD of Bismuth Titanate
Williams, P. A., Jones, A. C., Tobin, N. L., Marshall, P. A., Chalker, P. R., Davies, H. O., & Smith, L. M. (2002). Development of Improved Precursors for the MOCVD of Bismuth Titanate. MRS Proceedings, 748. doi:10.1557/proc-748-u12.3
MOCVD of HfO<sub>2</sub> from alkoxide and alkylamide precursors
Roberts, J. L., Williams, P. A., Jones, A. C., Marshall, P., Chalker, P. R., Bickley, J. F., . . . Smith, L. M. (2003). MOCVD of HfO<sub>2</sub> from alkoxide and alkylamide precursors. NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 745, 173-178. Retrieved from https://www.webofscience.com/
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.
Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2. J. Materials Chemistry, 12(2)(2), 165-167.
2001
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4
Embedded fibre Bragg grating sensors in advanced composite materials
Kuang, K. S. C., Kenny, R., Whelan, M. P., Cantwell, W. J., & Chalker, P. R. (2001). Embedded fibre Bragg grating sensors in advanced composite materials. COMPOSITES SCIENCE AND TECHNOLOGY, 61(10), 1379-1387. doi:10.1016/S0266-3538(01)00037-9
Optical characterization of GaInNAs
Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617
Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates
Kuang, K. S. C., Kenny, R., Whelan, M. P., Cantwell, W. J., & Chalker, P. R. (2001). Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates. SMART MATERIALS & STRUCTURES, 10(2), 338-346. doi:10.1088/0964-1726/10/2/321
Special issue on diamond sensors and actuators - Preface
Chalker, P. (2001). Special issue on diamond sensors and actuators - Preface. NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 11(2), U4. Retrieved from https://www.webofscience.com/
The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures
Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967
2000
Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403
B-doping and piezoresistivity of CVD diamond
Johnston, C., Crossley, A., Chalker, P. R., & Werner, M. (2000). B-doping and piezoresistivity of CVD diamond. In MICRO MATERIALS, PROCEEDINGS (pp. 867-872). Retrieved from https://www.webofscience.com/
Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering
Chalker, P. R., Morrice, D., Joyce, T. B., Noakes, T. C. Q., Bailey, P., & Considine, L. (2000). Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering. DIAMOND AND RELATED MATERIALS, 9(3-6), 520-523. doi:10.1016/S0925-9635(99)00259-9
Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy
Morrice, D. E., Farrell, T., Joyce, T. B., & Chalker, P. R. (2000). Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy. DIAMOND AND RELATED MATERIALS, 9(3-6), 460-463. doi:10.1016/S0925-9635(99)00282-4
Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.
The material properties, growth technology and applications of wide bandgap semiconductors for sensors and electronics
Chalker, P. R. (2000). The material properties, growth technology and applications of wide bandgap semiconductors for sensors and electronics. In MICRO MATERIALS, PROCEEDINGS (pp. 857). Retrieved from https://www.webofscience.com/
1999
Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy
Joyce, T. B., Chalker, P. R., & Farrell, T. (1999). Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 10(8), 585-588. doi:10.1023/A:1008909008317
High—temperature Sensors Based on SiC and Diamond Technology
Werner, M., Krötz, G., M?ller, H., Eickhoff, M., Gluche, P., Adamschik, M., . . . Chalker, P. R. (1999). High—temperature Sensors Based on SiC and Diamond Technology. In Unknown Book (Vol. 5, pp. 141-190). Wiley. doi:3.0.co;2-j">10.1002/1616-8984(199904)5:1<141::aid-seup141>3.0.co;2-j
Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices
Chalker, P. R., Joyce, T. B., Johnston, C., Crossley, J. A. A., Huddlestone, J., Whitfield, M. D., & Jackman, R. B. (1999). Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices. In DIAMOND AND RELATED MATERIALS Vol. 8 (pp. 309-313). doi:10.1016/S0925-9635(98)00263-5
Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)
Chalker, P. R., Joyce, T. B., & Farrell, T. (1999). Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100). DIAMOND AND RELATED MATERIALS, 8(2-5), 373-376. doi:10.1016/S0925-9635(98)00374-4
Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)
Chalker, P. R., Joyce, T. B., Farrell, T., Johnston, C., Crossley, A., & Eccles, J. (1999). Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100). THIN SOLID FILMS, 343, 575-578. doi:10.1016/S0040-6090(98)01723-4
Wide bandgap semiconductor materials for high temperature electronics
Chalker, P. R. (1999). Wide bandgap semiconductor materials for high temperature electronics. In THIN SOLID FILMS Vol. 343 (pp. 616-622). doi:10.1016/S0040-6090(98)01672-1
1998
Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes
Goeting, C. H., Jones, F., Foord, J. S., Eklund, J. C., Marken, F., Compton, R. G., . . . Johnston, C. (1998). Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 442(1-2), 207-216. doi:10.1016/S0022-0728(97)00456-7
CVD Diamond in the 21st Century
Chalker, P., & Lande, S. (1998). CVD Diamond in the 21st Century. In Low-Pressure Synthetic Diamond (pp. 363-379). Springer Berlin Heidelberg. doi:10.1007/978-3-642-71992-9_18
Diamond films: Recent developments in theory and practice
Stoneham, A. M., Ford, I. J., & Chalker, P. R. (1998). Diamond films: Recent developments in theory and practice. MRS BULLETIN, 23(9), 28-31. doi:10.1557/S0883769400029328
High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues
High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues (2009). In High-Temperature Electronics. IEEE. doi:10.1109/9780470544884.ch83
Polycrystalline diamond films for acoustic wave devices
Whitfield, M. D., Audic, B., Flannery, C. M., Kehoe, L. P., Cream, G. M., Johnston, C., . . . Jackman, R. B. (1998). Polycrystalline diamond films for acoustic wave devices. DIAMOND AND RELATED MATERIALS, 7(2-5), 533-539. doi:10.1016/S0925-9635(97)00278-1
1997
A review of diamond-like carbon technology
Chalker, P. R. (1997). A review of diamond-like carbon technology. IEE Colloquium (Digest), (59).
A review of diamond-like carbon technology
Chalker, P. R. (1997). A review of diamond-like carbon technology. In IEE Colloquium on Extremely Hard Materials for Micromechanics Vol. 1997 (pp. 1). IEE. doi:10.1049/ic:19970333
A thin film diamond p-channel field-effect transistor
Pang, L. Y. S., Chan, S. S. M., Jackman, R. B., Johnston, C., & Chalker, P. R. (1997). A thin film diamond p-channel field-effect transistor. APPLIED PHYSICS LETTERS, 70(3), 339-341. doi:10.1063/1.118408
High temperature Young's modulus of polycrystalline diamond
Werner, M., Klose, S., Szucs, F., Moelle, C., Fecht, H. J., Johnston, C., . . . BuckleyGolder, I. M. (1997). High temperature Young's modulus of polycrystalline diamond. DIAMOND AND RELATED MATERIALS, 6(2-4), 344-347. doi:10.1016/S0925-9635(96)00633-4
High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor
Pang, L. Y. S., Chan, S. S. M., Johnston, C., Chalker, P. R., & Jackman, R. B. (1997). High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor. DIAMOND AND RELATED MATERIALS, 6(2-4), 333-338. doi:10.1016/S0925-9635(96)00756-X
Measurement and calculation of the thermal expansion coefficient of diamond
Moelle, C., Klose, S., Szucs, F., Fecht, H. J., Johnston, C., Chalker, P. R., & Werner, M. (1997). Measurement and calculation of the thermal expansion coefficient of diamond. DIAMOND AND RELATED MATERIALS, 6(5-7), 839-842. doi:10.1016/S0925-9635(96)00674-7
Thin film diamond metal-insulator field effect transistor for high temperature applications
Pang, L. Y. S., Chan, S. S. M., Chalker, P. R., Johnston, C., & Jackman, R. B. (1997). Thin film diamond metal-insulator field effect transistor for high temperature applications. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 46(1-3), 124-128. doi:10.1016/S0921-5107(96)01946-0
1996
The relationship between resistivity and boron doping concentration of single and polycrystalline diamond
Werner, M., Job, R., Zaitzev, A., Fahrner, W. R., Seifert, W., Johnston, C., & Chalker, P. R. (1996). The relationship between resistivity and boron doping concentration of single and polycrystalline diamond. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 154(1), 385-393. doi:10.1002/pssa.2211540127
Thin film diamond sensor technology
Chalker, P. R., & Johnston, C. (1996). Thin film diamond sensor technology. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 154(1), 455-466. doi:10.1002/pssa.2211540132
Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films
Werner, M., Johnston, C., Chalker, P. R., Romani, S., & BuckleyGolder, I. M. (1996). Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films. JOURNAL OF APPLIED PHYSICS, 79(5), 2535-2541. doi:10.1063/1.361119
How to fabricate low-resistance metal-diamond contacts
Werner, M., Job, R., Denisenko, A., Zaitsev, A., Fahrner, W. R., Johnston, C., . . . BuckleyGolder, I. M. (1996). How to fabricate low-resistance metal-diamond contacts. DIAMOND AND RELATED MATERIALS, 5(6-8), 723-727. doi:10.1016/0925-9635(95)00391-6
Radiation hardness of DLC films produced by ion-assisted deposition
Prawer, S., Ran, B., Kalish, R., Johnston, C., Chalker, P., Bull, S. J., . . . Jones, A. M. (1996). Radiation hardness of DLC films produced by ion-assisted deposition. DIAMOND AND RELATED MATERIALS, 5(3-5), 405-409. doi:10.1016/0925-9635(95)00478-5
The application of CVD diamond to electronics within AEA technology
Johnston, C., Chalker, P. R., & BuckleyGolder, I. M. (1996). The application of CVD diamond to electronics within AEA technology. In EURODIAMOND '96 Vol. 52 (pp. 97-104). Retrieved from https://www.webofscience.com/
The current and future status of diamond in electronics
Chalker, P. R., & BuckleyGolder, I. M. (1996). The current and future status of diamond in electronics. In DIAMOND FOR ELECTRONIC APPLICATIONS Vol. 416 (pp. 375-382). Retrieved from https://www.webofscience.com/
1995
ALUMINUM AND NICKEL CONTACT METALLIZATIONS ON THIN-FILM DIAMOND
CHAN, S. S. M., PEUCHERET, C., MCKEAG, R. D., JACKMAN, R. B., JOHNSTON, C., & CHALKER, P. R. (1995). ALUMINUM AND NICKEL CONTACT METALLIZATIONS ON THIN-FILM DIAMOND. JOURNAL OF APPLIED PHYSICS, 78(4), 2877-2879. doi:10.1063/1.360096
FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS
CHALKER, P. R., JOHNSTON, C., ROMANI, S., AYRES, C. F., BUCKLEYGOLDER, I. M., KROTZ, G., . . . RUSHWORTH, S. A. (1995). FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS. DIAMOND AND RELATED MATERIALS, 4(5-6), 632-636. doi:10.1016/0925-9635(94)05217-4
HIGH-PERFORMANCE DIAMOND AND DIAMOND-LIKE COATINGS
BULL, S. J., & CHALKER, P. R. (1995). HIGH-PERFORMANCE DIAMOND AND DIAMOND-LIKE COATINGS. JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 47(4), 16-19. Retrieved from https://www.webofscience.com/
HIGH-TEMPERATURE CONTACTS TO CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - RELIABILITY ISSUES
JOHNSTON, C., CHALKER, P. R., BUCKLEYGOLDER, I. M., VANROSSUM, M., WERNER, M., & OBERMEIER, E. (1995). HIGH-TEMPERATURE CONTACTS TO CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - RELIABILITY ISSUES. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 29(1-3), 206-210. doi:10.1016/0921-5107(94)04033-Z
HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES
MCKEAG, R. D., CHAN, S. S. M., JOHNSON, C., CHALKER, P. R., & JACKMAN, R. B. (1995). HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 29(1-3), 223-227. doi:10.1016/0921-5107(94)04046-7
THE EFFECT OF METALLIZATION ON THE OHMIC CONTACT RESISTIVITY TO HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS
WERNER, M., DORSCH, O., BAERWIND, H. U., OBERMEIER, E., JOHNSTON, C., CHALKER, P. R., & ROMANI, S. (1995). THE EFFECT OF METALLIZATION ON THE OHMIC CONTACT RESISTIVITY TO HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 42(7), 1344-1351. doi:10.1109/16.391217
1994
INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY
CHUA, L. H., JACKMAN, R. B., FOORD, J. S., CHALKER, P. R., JOHNSTON, C., & ROMANI, S. (1994). INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 12(6), 3033-3039. doi:10.1116/1.578932
CHARGE-TRANSPORT IN HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS
WERNER, M., DORSCH, O., BAERWIND, H. U., OBERMEIER, E., HAASE, L., SEIFERT, W., . . . CHALKER, P. R. (1994). CHARGE-TRANSPORT IN HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS. APPLIED PHYSICS LETTERS, 64(5), 595-597. doi:10.1063/1.111088
INDENTATION RESPONSE OF DIAMOND THIN-FILMS
BULL, S. J., CHALKER, P. R., JOHNSTON, C., & COOPER, C. V. (1994). INDENTATION RESPONSE OF DIAMOND THIN-FILMS. DIAMOND AND RELATED MATERIALS, 4(1), 43-52. doi:10.1016/0925-9635(94)90067-1
NUCLEATION AND GROWTH OF CVD DIAMOND ON MAGNESIUM-OXIDE (100) AND TITANIUM NITRIDE MAGNESIUM-OXIDE (100) SURFACES
CHALKER, P. R., JOHNSTON, C., ROMANI, S., AYRES, C. F., & BUCKLEYGOLDER, I. M. (1994). NUCLEATION AND GROWTH OF CVD DIAMOND ON MAGNESIUM-OXIDE (100) AND TITANIUM NITRIDE MAGNESIUM-OXIDE (100) SURFACES. DIAMOND AND RELATED MATERIALS, 3(4-6), 393-397. doi:10.1016/0925-9635(94)90191-0
THE EFFECT OF ROUGHNESS ON THE FRICTION AND WEAR OF DIAMOND THIN-FILMS
BULL, S. J., CHALKER, P. R., JOHNSTON, C., & MOORE, V. (1994). THE EFFECT OF ROUGHNESS ON THE FRICTION AND WEAR OF DIAMOND THIN-FILMS. SURFACE & COATINGS TECHNOLOGY, 68, 603-610. doi:10.1016/0257-8972(94)90224-0
VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS
WERNER, M., DORSCH, O., BAERWIND, H. U., ERSOY, A., OBERMEIER, E., JOHNSTON, C., . . . BUCKLEYGOLDER, I. M. (1994). VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS. DIAMOND AND RELATED MATERIALS, 3(4-6), 983-985. doi:10.1016/0925-9635(94)90313-1
1993
DEGRADATION MECHANISMS OF PASSIVATED AND UNPASSIVATED DIAMOND THERMISTORS
CHALKER, P. R., JOHNSTON, C., CROSSLEY, J. A. A., AMBROSE, J., AYRES, C. F., HARPER, R. E., . . . KOBASHI, K. (1993). DEGRADATION MECHANISMS OF PASSIVATED AND UNPASSIVATED DIAMOND THERMISTORS. DIAMOND AND RELATED MATERIALS, 2(5-7), 1100-1106. doi:10.1016/0925-9635(93)90280-F
DIAMOND DEVICE DELINEATION VIA EXCIMER-LASER PATTERNING
JOHNSTON, C., CHALKER, P. R., BUCKLEYGOLDER, I. M., MARSDEN, P. J., & WILLIAMS, S. W. (1993). DIAMOND DEVICE DELINEATION VIA EXCIMER-LASER PATTERNING. DIAMOND AND RELATED MATERIALS, 2(5-7), 829-834. doi:10.1016/0925-9635(93)90233-R
PIEZORESISTIVE EFFECT OF BORON-DOPED DIAMOND THIN-FILMS
DORSCH, O., HOLZNER, K., WERNER, M., OBERMEIER, E., HARPER, R. E., JOHNSTON, C., . . . BUCKLEYGOLDER, I. M. (1993). PIEZORESISTIVE EFFECT OF BORON-DOPED DIAMOND THIN-FILMS. DIAMOND AND RELATED MATERIALS, 2(5-7), 1096-1099. doi:10.1016/0925-9635(93)90279-B
SPACE-CHARGE-LIMITED CURRENT FLOW AND TRAP DENSITY IN UNDOPED DIAMOND FILMS
WERNER, M., DORSCH, O., HINZE, A., OBERMEIER, E., HARPER, R. E., JOHNSTON, C., . . . BUCKLEYGOLDER, I. M. (1993). SPACE-CHARGE-LIMITED CURRENT FLOW AND TRAP DENSITY IN UNDOPED DIAMOND FILMS. DIAMOND AND RELATED MATERIALS, 2(5-7), 825-828. doi:10.1016/0925-9635(93)90232-Q
Diamond device delineation via excimer laser patterning
Johnston, C., Chalker, P. R., Buckley-Golder, I. M., Marsden, P. J., & Williams, S. W. (1993). Diamond device delineation via excimer laser patterning. Diamond and Related Materials, 2(5 -7 pt 2), 829-834.
Space-charge-limited current flow and trap density in undoped diamond films
Werner, M., Dorsch, O., Hinze, A., Obermeier, E., Harper, R. E., Johnston, C., . . . Buckley-Golder, I. M. (1993). Space-charge-limited current flow and trap density in undoped diamond films. Diamond and Related Materials, 2(5 -7 pt 2), 825-828.
1992
CONTACTS TO DOPED AND UNDOPED POLYCRYSTALLINE DIAMOND FILMS
HARPER, R. E., JOHNSTON, C., CHALKER, P. R., TOTTERDELL, D., BUCKLEYGOLDER, I. M., WERNER, M., . . . VANROSSUM, M. (1992). CONTACTS TO DOPED AND UNDOPED POLYCRYSTALLINE DIAMOND FILMS. DIAMOND AND RELATED MATERIALS, 1(5-6), 692-696. doi:10.1016/0925-9635(92)90193-R
HIGH-TEMPERATURE RAMAN STUDIES OF DIAMOND THIN-FILMS
JOHNSTON, C., CROSSLEY, A., CHALKER, P. R., BUCKLEYGOLDER, I. M., & KOBASHI, K. (1992). HIGH-TEMPERATURE RAMAN STUDIES OF DIAMOND THIN-FILMS. DIAMOND AND RELATED MATERIALS, 1(5-6), 450-456. doi:10.1016/0925-9635(92)90145-E
Electrical properties of doped and undoped diamond films
Harper, R., Johnston, C., Blamires, N., Chalker, P., & Buckley-Golder, I. (1992). Electrical properties of doped and undoped diamond films. R and D: Research and Development Kobe Steel Engineering Reports, 42(2), 24-27.
LUBRICATED SLIDING WEAR OF PHYSICALLY VAPOR-DEPOSITED TITANIUM NITRIDE
BULL, S. J., & CHALKER, P. R. (1992). LUBRICATED SLIDING WEAR OF PHYSICALLY VAPOR-DEPOSITED TITANIUM NITRIDE. SURFACE & COATINGS TECHNOLOGY, 50(2), 117-126. doi:10.1016/0257-8972(92)90052-C
ALUMINUM ACCUMULATION IN RELATION TO SENILE PLAQUE AND NEUROFIBRILLARY TANGLE FORMATION IN THE BRAINS OF PATIENTS WITH RENAL-FAILURE
CANDY, J. M., MCARTHUR, F. K., OAKLEY, A. E., TAYLOR, G. A., CHEN, C., MOUNTFORT, S. A., . . . EDWARDSON, J. A. (1992). ALUMINUM ACCUMULATION IN RELATION TO SENILE PLAQUE AND NEUROFIBRILLARY TANGLE FORMATION IN THE BRAINS OF PATIENTS WITH RENAL-FAILURE. JOURNAL OF THE NEUROLOGICAL SCIENCES, 107(2), 210-218. doi:10.1016/0022-510X(92)90291-R
MECHANICAL-PROPERTIES OF DIAMOND THIN-FILMS
BULL, S. J., CHALKER, P. R., & JOHNSTON, C. (1992). MECHANICAL-PROPERTIES OF DIAMOND THIN-FILMS. MATERIALS SCIENCE AND TECHNOLOGY, 8(8), 679-684. doi:10.1179/mst.1992.8.8.679
1991
EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS
JOHNSTON, C., AYRES, C. F., & CHALKER, P. R. (1991). EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMONDDEPOSITION USING FACTORIAL ANALYSIS. Le Journal de Physique IV, 02(C2). doi:10.1051/jp4:19912110
HIGH TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS
JOHNSTON, C., CROSSLEY, A., JONES, A. M., CHALKER, P. R., CULLEN, F. L., & BUCKLEY-GOLDER, I. M. (1991). HIGH TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS. Le Journal de Physique IV, 02(C2). doi:10.1051/jp4:19912112
A REVIEW OF THE METHODS FOR THE EVALUATION OF COATING-SUBSTRATE ADHESION
CHALKER, P. R., BULL, S. J., & RICKERBY, D. S. (1991). A REVIEW OF THE METHODS FOR THE EVALUATION OF COATING-SUBSTRATE ADHESION. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 140, 583-592. doi:10.1016/0921-5093(91)90482-3
Review of the methods for the evaluation of coating-substrate adhesion
Chalker, P. R., Bull, S. J., & Rickerby, D. S. (1991). Review of the methods for the evaluation of coating-substrate adhesion. Materials Science and Engineering A, A140(1-2), 583-592.
THE INFLUENCE OF TITANIUM INTERLAYERS ON THE ADHESION OF TITANIUM NITRIDE COATINGS OBTAINED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION
BULL, S. J., CHALKER, P. R., AYRES, C. F., & RICKERBY, D. S. (1991). THE INFLUENCE OF TITANIUM INTERLAYERS ON THE ADHESION OF TITANIUM NITRIDE COATINGS OBTAINED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 139, 71-78. doi:10.1016/0921-5093(91)90599-I
CHARACTERIZATION OF DIAMOND AND DIAMOND-LIKE FILMS
CHALKER, P. R. (1991). CHARACTERIZATION OF DIAMOND AND DIAMOND-LIKE FILMS. In DIAMOND AND DIAMOND-LIKE FILMS AND COATINGS Vol. 266 (pp. 127-150). Retrieved from https://www.webofscience.com/
Characterisation of coatings and interfaces
Chalker, P. R. (1991). Characterisation of coatings and interfaces. In Advanced Surface Coatings: a Handbook of Surface Engineering (pp. 278-314). Springer Netherlands. doi:10.1007/978-94-011-3040-0_11
Degassing of RS 2014 aluminium
Tweed, J. H., Chalker, P. R., & Young, R. M. K. (1991). Degassing of RS 2014 aluminium. Metal Powder Report, 46(10), 16-22. doi:10.1016/0026-0657(91)90972-4
ELECTRICAL AND ELECTRONIC-PROPERTIES OF DIAMOND FILMS
HARPER, R. E., JOHNSTON, C., CHALKER, P. R., TOTTERDELL, D., BUCKLEYGOLDER, I. M., & KOBASHI, K. (1991). ELECTRICAL AND ELECTRONIC-PROPERTIES OF DIAMOND FILMS. APPLICATIONS OF DIAMOND FILMS AND RELATED MATERIALS, 73, 335-340. Retrieved from https://www.webofscience.com/
ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS
HARPER, R. E., JOHNSTON, C., BLAMIRES, N. G., CHALKER, P. R., & BUCKLEYGOLDER, I. M. (1991). ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS. SURFACE & COATINGS TECHNOLOGY, 47(1-3), 344-355. doi:10.1016/0257-8972(91)90300-L
EVALUATING THE INFLUENCE OF GROWTH-PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS
JOHNSTON, C., AYRES, C. F., & CHALKER, P. R. (1991). EVALUATING THE INFLUENCE OF GROWTH-PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS. JOURNAL DE PHYSIQUE IV, 1(C2), 915-921. Retrieved from https://www.webofscience.com/
EVALUATION OF INTERNAL-STRESSES PRESENT IN CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS
CHALKER, P. R., JONES, A. M., JOHNSTON, C., & BUCKLEYGOLDER, I. M. (1991). EVALUATION OF INTERNAL-STRESSES PRESENT IN CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS. SURFACE & COATINGS TECHNOLOGY, 47(1-3), 365-374. doi:10.1016/0257-8972(91)90302-D
HIGH-TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS
JOHNSTON, C., CROSSLEY, A., JONES, A. M., CHALKER, P. R., CULLEN, F. L., & BUCKLEYGOLDER, I. M. (1991). HIGH-TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS. JOURNAL DE PHYSIQUE IV, 1(C2), 931-937. Retrieved from https://www.webofscience.com/
1990
SURFACE ALTERATION OF LNBA2CU3O7-X FOLLOWING EXPOSURE TO MOISTURE O-2 AND CO2
MYHRA, S., CHALKER, P. R., MOSELEY, P. T., & RIVIERE, J. C. (1990). SURFACE ALTERATION OF LNBA2CU3O7-X FOLLOWING EXPOSURE TO MOISTURE O-2 AND CO2. PHYSICA C, 165(3-4), 270-278. doi:10.1016/0921-4534(90)90203-Q
DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS
BUCKLEYGOLDER, I. M., CHALKER, P. R., GLASS, J. T., KOBASHI, K., & NAKAUE, A. (1990). DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS. CARBON, 28(6), 801. doi:10.1016/0008-6223(90)90311-L
1989
ChemInform Abstract: A SIMS Investigation of Hydrogen Penetration of Titanium Electrodes
BLACKWOOD, D. J., PETER, L. M., BISHOP, H. E., CHALKER, P. R., & WILLIAMS, D. E. (1989). ChemInform Abstract: A SIMS Investigation of Hydrogen Penetration of Titanium Electrodes. ChemInform, 20(52). doi:10.1002/chin.198952018
X-RAY PHOTOELECTRON-SPECTRA OF PEROVSKITE-TYPE COBALT OXIDES LA1-XSRXCOO3-Y (X=0.4, 0.6)
BOCQUET, A. E., CHALKER, P., DOBSON, J. F., HEALY, P. C., MYHRA, S., & THOMPSON, J. G. (1989). X-RAY PHOTOELECTRON-SPECTRA OF PEROVSKITE-TYPE COBALT OXIDES LA1-XSRXCOO3-Y (X=0.4, 0.6). PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 160(3-4), 252-258. doi:10.1016/0921-4534(89)90058-0
COMPARISON OF THE REGIONAL DISTRIBUTION OF TRANSFERRIN RECEPTORS AND ALUMINUM IN THE FOREBRAIN OF CHRONIC RENAL DIALYSIS PATIENTS
CANDY, J. M., MORRIS, C. M., OAKLEY, A. E., TAYLOR, G. A., MOUNTFORT, S. A., CHALKER, P. R., . . . EDWARDSON, J. A. (1989). COMPARISON OF THE REGIONAL DISTRIBUTION OF TRANSFERRIN RECEPTORS AND ALUMINUM IN THE FOREBRAIN OF CHRONIC RENAL DIALYSIS PATIENTS. BIOCHEMICAL SOCIETY TRANSACTIONS, 17(4), 669-670. doi:10.1042/bst0170669
A SIMS INVESTIGATION OF HYDROGEN PENETRATION OF TITANIUM ELECTRODES
BLACKWOOD, D. J., PETER, L. M., BISHOP, H. E., CHALKER, P. R., & WILLIAMS, D. E. (1989). A SIMS INVESTIGATION OF HYDROGEN PENETRATION OF TITANIUM ELECTRODES. ELECTROCHIMICA ACTA, 34(10), 1401-1403. doi:10.1016/0013-4686(89)87178-6
APPLICATIONS OF A HIGH SPATIAL-RESOLUTION COMBINED AES SIMS INSTRUMENT
BISHOP, H. E., MOON, D. P., MARRIOTT, P., & CHALKER, P. R. (1989). APPLICATIONS OF A HIGH SPATIAL-RESOLUTION COMBINED AES SIMS INSTRUMENT. VACUUM, 39(10), 929-939. doi:10.1016/0042-207X(89)90704-5
HIGH SPATIAL-RESOLUTION SIMS INVESTIGATION OF OXIDES FORMED ON STAINLESS-STEEL UNDER PWR CONDITIONS
MARRIOTT, P., COULING, S. B., & CHALKER, P. R. (1989). HIGH SPATIAL-RESOLUTION SIMS INVESTIGATION OF OXIDES FORMED ON STAINLESS-STEEL UNDER PWR CONDITIONS. APPLIED SURFACE SCIENCE, 37(2), 217-232. doi:10.1016/0169-4332(89)90484-4
1988
SIMS STUDIES OF SCALE GROWTH-PROCESSES
MOON, D. P., HARRIS, A. W., CHALKER, P. R., & MOUNTFORT, S. (1988). SIMS STUDIES OF SCALE GROWTH-PROCESSES. MATERIALS SCIENCE AND TECHNOLOGY, 4(12), 1101-1106. doi:10.1179/mst.1988.4.12.1101
Association of Aluminium and Silicon with Neuropathological Changes in the Ageing Brain
Candy, J., Oakley, A., Gauvreau, D., Chalker, P., Bishop, H., Moon, D., . . . Edwardson, J. (n.d.). Association of Aluminium and Silicon with Neuropathological Changes in the Ageing Brain. In Interdisciplinary Topics in Gerontology and Geriatrics (pp. 140-155). S. Karger AG. doi:10.1159/000416155
1987
THE IDENTIFICATION AND CHARACTERIZATION OF MIXED OXIDATION-STATES AT OXIDIZED TITANIUM SURFACES BY ANALYSIS OF X-RAY PHOTOELECTRON-SPECTRA
CARLEY, A. F., CHALKER, P. R., RIVIERE, J. C., & ROBERTS, M. W. (1987). THE IDENTIFICATION AND CHARACTERIZATION OF MIXED OXIDATION-STATES AT OXIDIZED TITANIUM SURFACES BY ANALYSIS OF X-RAY PHOTOELECTRON-SPECTRA. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 83, 351-370. doi:10.1039/f19878300351
ChemInform Abstract: Identification and Characterization of Mixed Oxidation States at Oxidized Titanium Surfaces by Analysis of X‐Ray Photoelectron Spectra.
CARLEY, A. F., CHALKER, P. R., RIVIERE, J. C., & ROBERTS, M. W. (1987). ChemInform Abstract: Identification and Characterization of Mixed Oxidation States at Oxidized Titanium Surfaces by Analysis of X‐Ray Photoelectron Spectra.. ChemInform, 18(20). doi:10.1002/chin.198720012
THE INFLUENCE OF CERIUM, YTTRIUM AND LANTHANUM ION-IMPLANTATION ON THE OXIDATION BEHAVIOR OF A 20CR-25NI-NB STAINLESS-STEEL IN CARBON-DIOXIDE AT 900-1050-DEGREES-C
BENNETT, M. J., BISHOP, H. E., CHALKER, P. R., & TUSON, A. T. (1987). THE INFLUENCE OF CERIUM, YTTRIUM AND LANTHANUM ION-IMPLANTATION ON THE OXIDATION BEHAVIOR OF A 20CR-25NI-NB STAINLESS-STEEL IN CARBON-DIOXIDE AT 900-1050-DEGREES-C. MATERIALS SCIENCE AND ENGINEERING, 90, 177-190. doi:10.1016/0025-5416(87)90210-2
1985
DEFECTS IN OXIDE OVERLAYERS AT NICKEL SINGLE-CRYSTAL SURFACES
CARLEY, A. F., CHALKER, P. R., & ROBERTS, M. W. (1985). DEFECTS IN OXIDE OVERLAYERS AT NICKEL SINGLE-CRYSTAL SURFACES. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 399(1816), 167-179. doi:10.1098/rspa.1985.0053
Undated
Engineered tunnel-barrier terahertz rectifiers for optical nantennas
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.