Publications
Selected publications
- Highly-mismatched InAs/InSe heterojunction diodes (Journal article - 2016)
- Demonstration of InAsBi photoresponse beyond 3.5 μm (Journal article - 2014)
- High-Gain InAs Planar Avalanche Photodiodes (Journal article - 2016)
- Linear array of InAs APDs operating at 2 μm (Journal article - 2013)
2023
Gamification Approaches for Improving Engagement and Learning in Small and Large Engineering Classes
McIntosh, D., Al-Nuaimy, W., Ataby, A. A., Sandall, I., Selis, V., & Allen, S. (n.d.). Gamification Approaches for Improving Engagement and Learning in Small and Large Engineering Classes. International Journal of Information and Education Technology, 13(9), 1328-1337. doi:10.18178/ijiet.2023.13.9.1935
Comparison of Bio Sensing Techniques for VEGF
Alshammari, A., Hulme, S., Zalinge, H. V., & Sandall, I. (2023). Comparison of Bio Sensing Techniques for VEGF. In 2023 IEEE BioSensors Conference (BioSensors) Vol. 11 (pp. 1-4). IEEE. doi:10.1109/biosensors58001.2023.10280896
In Situ Monitoring of Aptamer-Protein Binding on a ZnO Surface Using Spectroscopic Ellipsometry.
Alshammari, A., van Zalinge, H., & Sandall, I. (2023). In Situ Monitoring of Aptamer-Protein Binding on a ZnO Surface Using Spectroscopic Ellipsometry.. Sensors (Basel, Switzerland), 23(14), 6353. doi:10.3390/s23146353
2022
Selection and Functionalization of Germanium Nanowires for Bio- Sensing
Laumier, S., Farrow, T., van Zalinge, H., Seravalli, L., Bosi, M., & Sandall, I. (2022). Selection and Functionalization of Germanium Nanowires for Bio- Sensing. ACS OMEGA. doi:10.1021/acsomega.2c04775
GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing
Cao, Z., Hulme, S., Veal, T. D., Ashwin, M. J., & Sandall, I. (n.d.). GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing. Frontiers in Electronic Materials, 2. doi:10.3389/femat.2022.895959
An Aptamer-Functionalised Schottky-Field Effect Transistor for the Detection of Proteins
Farrow, T., Laumier, S., Sandall, I., & van Zalinge, H. (n.d.). An Aptamer-Functionalised Schottky-Field Effect Transistor for the Detection of Proteins. Biosensors, 12(5), 347. doi:10.3390/bios12050347
2021
Enhancing the engagement of large cohorts using live interactive polling and feedback
Sedghi, N., Limniou, M., Al-Nuiamy, W., Sandall, I., Al Ataby, A., & Duret, D. (2021). Enhancing the engagement of large cohorts using live interactive polling and feedback. Developing Academic Practice, 2021(January), 31-50. doi:10.3828/dap.2021.6
2020
Feasibility of a silicon thin film transistor-based aptamer sensor for COVID-19 detection
GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing
Cao, Z., Ashwin, M., Veal, T., Sandall, I., & IEEE. (2020). GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing. In 2020 IEEE PHOTONICS CONFERENCE (IPC). Retrieved from http://gateway.webofknowledge.com/
Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers
Cao, Z., Mitrovic, I. Z., & Sandall, I. (2020). Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(10), 4269-4273. doi:10.1109/TED.2020.3012122
Silicon thin film transistor-based aptamer sensor for COVID-19 detection
GaAsSbN for Multi-Junction Solar Cells
Mumtaz, A., Milanova, M., Sandall, I., Cheetham, K., Cao, Z., Bilton, M., . . . Durose, K. (2020). GaAsSbN for Multi-Junction Solar Cells. In 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) (pp. 1799-1803). doi:10.1109/pvsc45281.2020.9300524
2019
Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes
Cao, Z., Veal, T. D., Ashwin, M. J., Dawson, K., & Sandall, I. (2019). Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes. In JOURNAL OF APPLIED PHYSICS Vol. 126. doi:10.1063/1.5108870
Enhancing the engagement of large cohort of students by live interactive polling and feedback
Sedghi, N., Al-Nuaimy, W., Sandall, I., Limniou, M., Duret, D., & Al Ataby, A. (2019). Enhancing the engagement of large cohort of students by live interactive polling and feedback. In Learning and Teaching Conference. Liverpool, UK.
2018
Utilization of Dielectrophresis to position Nanowires for potential bio-sensor applications
Sandall, I., & Sedghi, N. (2018). Utilization of Dielectrophresis to position Nanowires for potential bio-sensor applications. In Semiconducting Nano Materials for Health Applications. Grenoble.
2017
Hole density and acceptor-type defects in MBE-grown GaSb<sub>1-x</sub>Bi<sub>x</sub>
Segercrantz, N., Slotte, J., Makonnen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J., & Veal, T. D. (2017). Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50(29), 6 pages. doi:10.1088/1361-6463/aa779a
Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors
Anyebe, E., Sandall, I., Jin, Z., Sanchez, A., Rajpalke, M., Veal, T., . . . Zhuang, Q. (2017). Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports, 7. doi:10.1038/srep46110
2016
Highly-mismatched InAs/InSe heterojunction diodes
Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovskiy, O., Kesaria, M., Krier, A., . . . Patanè, A. (2016). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), 4 pages. doi:10.1063/1.4967381
High-Gain InAs Planar Avalanche Photodiodes
White, B. S., Sandall, I. C., Zhou, X., Krysa, A., McEwan, K., David, J. P. R., & Tan, C. H. (2016). High-Gain InAs Planar Avalanche Photodiodes. JOURNAL OF LIGHTWAVE TECHNOLOGY, 34(11), 2639-2644. doi:10.1109/JLT.2016.2531278
Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode
Butera, S., Vines, P., Tan, C. H., Sandall, I., & Buller, G. S. (2016). Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. ELECTRONICS LETTERS, 52(5), 385-386. doi:10.1049/el.2015.3995
InAs-QDIP hybrid broadband infrared photodetector
Tan, C. H., Sandall, I. C., Zhou, X., & Krishna, S. (2016). InAs-QDIP hybrid broadband infrared photodetector. MRS ADVANCES, 1(48), 3301-3306. doi:10.1557/adv.2016.457
2015
Planar InAs Avalanche Photodiodes
White, B. S., Sandall, I. C., & Tan, C. H. (2015). Planar InAs Avalanche Photodiodes. In 2015 PHOTONICS CONFERENCE (IPC). Retrieved from https://www.webofscience.com/
InAs Diodes Fabricated Using Be Ion Implantation
White, B. S., Sandall, I. C., David, J. P. R., & Tan, C. H. (2015). InAs Diodes Fabricated Using Be Ion Implantation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(9), 2928-2932. doi:10.1109/TED.2015.2456434
H-tailored surface conductivity in narrow band gap In(AsN)
Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., . . . Tan, C. H. (2015). H-tailored surface conductivity in narrow band gap In(AsN). APPLIED PHYSICS LETTERS, 106(2). doi:10.1063/1.4906111
2014
InAs APD with solid state photomultiplier characteristics
Sandall, I., White, B., & Tan, C. H. (2014). InAs APD with solid state photomultiplier characteristics. In 2014 IEEE PHOTONICS CONFERENCE (IPC) (pp. 354-355). Retrieved from https://www.webofscience.com/
InAsBi photodiode operating in the MWIR
Sandall, I. C., Bastiman, F., White, B., Richards, R., David, J., & Tan, C. H. (2014). InAsBi photodiode operating in the MWIR. In 2014 IEEE PHOTONICS CONFERENCE (IPC) (pp. 356-357). Retrieved from https://www.webofscience.com/
Planar InAs p-i-n photodiodes fabricated using ion implantation
White, B. S., Sandall, I., & Tan, C. H. (2014). Planar InAs p-i-n photodiodes fabricated using ion implantation. In 2014 IEEE PHOTONICS CONFERENCE (IPC) (pp. 352-353). Retrieved from https://www.webofscience.com/
Demonstration of an InAsBi photodiode operating in the MWIR
Sandall, I. C., Bastiman, F., White, B., Richards, R. D., David, J., & Tan, C. H. (2014). Demonstration of an InAsBi photodiode operating in the MWIR. In EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE II AND QUANTUM-PHYSICS-BASED INFORMATION SECURITY III Vol. 9254. doi:10.1117/12.2069697
Temperature dependence of impact ionization in InAs (vol 21, pg 8630, 2013)
Sandall, I. C., Ng, J. S., Xie, S., Ker, P. J., & Tan, C. H. (2014). Temperature dependence of impact ionization in InAs (vol 21, pg 8630, 2013). OPTICS EXPRESS, 22(21), 25923. doi:10.1364/OE.22.025923
Demonstration of InAsBi photoresponse beyond 3.5 μm
Sandall, I. C., Bastiman, F., White, B., Richards, R., Mendes, D., David, J. P. R., & Tan, C. H. (2014). Demonstration of InAsBi photoresponse beyond 3.5 μm. Applied Physics Letters, 104(17). doi:10.1063/1.4873403
2013
Linear array of InAs APDs operating at 2 μm
Sandall, I. C., Zhang, S., & Tan, C. H. (2013). Linear array of InAs APDs operating at 2 μm. OPTICS EXPRESS, 21(22), 25780-25787. doi:10.1364/OE.21.025780
Evaluation of InAs quantum dots on Si as optical modulator
Sandall, I. C., Ng, J. S., David, J. P. R., Liu, H., & Tan, C. H. (2013). Evaluation of InAs quantum dots on Si as optical modulator. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(9). doi:10.1088/0268-1242/28/9/094002
Temperature dependence of impact ionization in InAs
Sandall, I. C., Ng, J. S., Xie, S., Ker, P. J., & Tan, C. H. (2013). Temperature dependence of impact ionization in InAs. OPTICS EXPRESS, 21(7), 8630-8637. doi:10.1364/OE.21.008630
2012
Electrical modulation of the optical properties of mid-infrared metamaterials
Larsen, K., Austin, D., Sandall, I. C., Davies, D. G., Revin, D. G., Cockburn, J. W., . . . Wilson, L. R. (2012). Electrical modulation of the optical properties of mid-infrared metamaterials. APPLIED PHYSICS LETTERS, 101(25). doi:10.1063/1.4772545
InAs Quantum Dot Photodetector operating at 1.3 μm grown on Silicon
Sandall, I. C., Ng, J. S., David, J. P., Tan, C. H., Wang, T., & Liu, H. (2012). InAs Quantum Dot Photodetector operating at 1.3 μm grown on Silicon. In 2012 IEEE PHOTONICS CONFERENCE (IPC) (pp. 167-+). Retrieved from https://www.webofscience.com/
Planar InAs photodiodes fabricated using He ion implantation
Sandall, I., Tan, C. H., Smith, A., & Gwilliam, R. (2012). Planar InAs photodiodes fabricated using He ion implantation. In 2012 IEEE PHOTONICS CONFERENCE (IPC) (pp. 165-+). Retrieved from https://www.webofscience.com/
1300 nm wavelength InAs quantum dot photodetector grown on silicon
Sandall, I., Ng, J. S., David, J. P. R., Tan, C. H., Wang, T., & Liu, H. (2012). 1300 nm wavelength InAs quantum dot photodetector grown on silicon. OPTICS EXPRESS, 20(10), 10446-10452. doi:10.1364/OE.20.010446
Planar InAs photodiodes fabricated using He ion implantation
Sandall, I., Tan, C. H., Smith, A., & Gwilliam, R. (2012). Planar InAs photodiodes fabricated using He ion implantation. OPTICS EXPRESS, 20(8), 8575-8583. doi:10.1364/OE.20.008575
2011
High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes
Sandall, I. C., Xie, S., Xie, J., & Tan, C. H. (2011). High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes. OPTICS LETTERS, 36(21), 4287-4289. doi:10.1364/OL.36.004287
2010
Terahertz optical sideband emission in self-assembled quantum dots
Sandall, I. C., Porter, N. E., Wagner, M., Schneider, H., Winnerl, S., Helm, M., & Wilson, L. (2010). Terahertz optical sideband emission in self-assembled quantum dots. APPLIED PHYSICS LETTERS, 96(20). doi:10.1063/1.3429681
X-shaped plasmonic antenna on a quantum cascade laser
Austin, D., Mullin, N., Luxmoore, I., Sandall, I. C., Cullis, A. G., Bismuto, A., . . . Wilson, L. R. (2010). X-shaped plasmonic antenna on a quantum cascade laser. APPLIED PHYSICS LETTERS, 96(15). doi:10.1063/1.3380660
2008
Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers (<i>Invited paper</i>)
Smowton, P. M., George, A., Sandall, I. C., Hopkinson, M., & Liu, H. -Y. (2008). Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers (<i>Invited paper</i>). IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 14(4), 1162-1170. doi:10.1109/JSTQE.2008.920040
2007
Identifying the origin of non-radiative recombination in ln(Ga)As quantum dot lasers
Smowton, P. M., George, A. A., Sandall, I. C., Liu, H. Y., & Hopkinson, M. (2007). Identifying the origin of non-radiative recombination in ln(Ga)As quantum dot lasers. In 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp. 429-+). Retrieved from https://www.webofscience.com/
Localized Auger recombination in quantum-dot lasers
Blood, P., Pask, H., Summers, H. D., & Sandall, I. (2007). Localized Auger recombination in quantum-dot lasers. IEEE JOURNAL OF QUANTUM ELECTRONICS, 43(11-12), 1140-1146. doi:10.1109/JQE.2007.907541
Temperature-dependent gain and threshold in P-doped quantum dot lasers
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2007). Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 13(5), 1261-1266. doi:10.1109/JSTQE.2007.903375
Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers
Sandall, I. C., Smowton, P. M., Liu, H. -Y., & Hopkinson, M. (2007). Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers. IEEE JOURNAL OF QUANTUM ELECTRONICS, 43(7-8), 698-703. doi:10.1109/JQE.2007.901583
Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. -Y., & Hopkinson, M. (2007). Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XV Vol. 6468. doi:10.1117/12.702733
Recombination in quantum dot ensembles
Blood, P., Pask, H., Sandall, I., & Summers, H. (2007). Recombination in quantum dot ensembles. In NOVEL IN - PLANE SEMICONDUCTOR LASERS IV Vol. 6485. doi:10.1117/12.714264
Gain in <i>p</i>-doped quantum dot lasers
Smowton, P. M., Sandall, I. C., Liu, H. Y., & Hopkinson, M. (2007). Gain in <i>p</i>-doped quantum dot lasers. JOURNAL OF APPLIED PHYSICS, 101(1). doi:10.1063/1.2405738
2006
Improved 1.3 &#x03BC;m In(Ga)As quantum dot lasers by engineering the GaAs spacer layers
Walker, C. L., Sandall, I. C., Smowton, P. M., Badcock, T. J., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). Improved 1.3 &#x03BC;m In(Ga)As quantum dot lasers by engineering the GaAs spacer layers. In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference (pp. 1-2). IEEE. doi:10.1109/cleo.2006.4628003
Localised recombination in quantum dot structures
Sandall, I. C., Pask, H. J., Smowton, P. M., Summers, H. D., Blood, P., HuiYun Liu., & Hopkinson, M. (2006). Localised recombination in quantum dot structures. In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference (pp. 1-2). IEEE. doi:10.1109/cleo.2006.4628106
Maximising the Gain and Minimising the Non-Radiative Recombination in 1.3μm Quantum Dot Lasers
Smowton, P. M., Sandall, I. C., Walker, C. L., Mowbray, D. J., Liu, H. -Y., & Hopkinson, M. (2006). Maximising the Gain and Minimising the Non-Radiative Recombination in 1.3μm Quantum Dot Lasers. In 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. Vol. 88 (pp. 75-76). IEEE. doi:10.1109/islc.2006.1708093
Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures
Sandall, I. C., Walker, C. L., Smowton, P. M., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 153 (pp. 316-320). doi:10.1049/ip-opt:20060042
The effect of p - doping in In(Ga)As quantum dot lasers
Sandall, I. C., Walker, C. L., Smowton, P. M., Badcock, T., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). The effect of p - doping in In(Ga)As quantum dot lasers. In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference Vol. 20 (pp. 1-2). IEEE. doi:10.1109/cleo.2006.4628109
Temperature dependence of threshold current in <i>p</i>-doped quantum dot lasers
Sandall, I. C., Smowton, P. M., Thomson, J. D., Badcock, T., Mowbray, D. J., Liu, H. -Y., & Hopkinson, M. (2006). Temperature dependence of threshold current in <i>p</i>-doped quantum dot lasers. APPLIED PHYSICS LETTERS, 89(15). doi:10.1063/1.2361167
1.3μm emitting, self assembled quantum dot lasers
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). 1.3μm emitting, self assembled quantum dot lasers. In 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp. 867). Retrieved from https://www.webofscience.com/
Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers
Walker, C. L., Sandall, I. C., Smowton, P. M., Mowbray, D. J., Liu, H. Y., Liew, S. L., & Hopkinson, M. (2006). Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE PHOTONICS TECHNOLOGY LETTERS, 18(13-16), 1557-1559. doi:10.1109/LPT.2006.879592
Recombination mechanisms in 1.3-μm InAs quantum-dot lasers
Sandall, I. C., Smowton, P. M., Walker, C. L., Liu, H. Y., Hopkinson, M., & Mowbray, D. J. (2006). Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE PHOTONICS TECHNOLOGY LETTERS, 18(5-8), 965-967. doi:10.1109/LPT.2006.873560
The effect of <i>p</i> doping in InAs quantum dot lasers
Sandall, I. C., Smowton, P. M., Walker, C. L., Badcock, T., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). The effect of <i>p</i> doping in InAs quantum dot lasers. APPLIED PHYSICS LETTERS, 88(11). doi:10.1063/1.2186078
Characterisation of modulation doped quantum dot lasers
Smowton, P. M., Sandall, I. C., Walker, C. L., Thomson, J. D., Sobiesierski, A., Badcock, T., . . . Hopkinson, M. (2006). Characterisation of modulation doped quantum dot lasers. In NOVEL IN-PLANE SEMICONDUCTOR LASERS V Vol. 6133. doi:10.1117/12.650682
1.3 &#x003BC;m emitting, self assembled quantum dot lasers
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). 1.3 &#x003BC;m emitting, self assembled quantum dot lasers. In LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society (pp. 867). IEEE. doi:10.1109/leos.2006.279081
Auger Recombination is NOT Necessary to Explain the Temperature Dependence of Threshold in p-doped Quantum Dot Lasers
Smowton, P. M., Sandall, I. C., Thomson, J. D., Badcock, T., Mowbray, D. J., Jin, C. -Y., & Liu, H. -Y. (2006). Auger Recombination is NOT Necessary to Explain the Temperature Dependence of Threshold in p-doped Quantum Dot Lasers. In 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. (pp. 155-156). IEEE. doi:10.1109/islc.2006.1708133
2005
Recombination processes in inas quantum dot lasers containing high growth temperature spacer layers operating at 1.3 &#x03BC;m
Sandall, I. C., Walker, C. L., Smowton, P. M., Sellers, I. R., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (n.d.). Recombination processes in inas quantum dot lasers containing high growth temperature spacer layers operating at 1.3 &#x03BC;m. In EQEC '05. European Quantum Electronics Conference, 2005. Vol. 85 (pp. 20). IEEE. doi:10.1109/eqec.2005.1567193
The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers
Walker, C. L., Sandall, I. C., Smowton, P. M., Sellers, I., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2005). The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers. IEEE PHOTONICS TECHNOLOGY LETTERS, 17(10), 2011-2013. doi:10.1109/LPT.2005.854393
Growth and characterisation of multiple layer quantum dot lasers
Smowton, P. M., Walker, C. L., Sandall, I. C., Sellers, I. R., Mowbray, D. J., Liu, H. Y., . . . Hopkinson, M. (2005). Growth and characterisation of multiple layer quantum dot lasers. In Novel In-Plane Semiconductor Lasers IV Vol. 5738 (pp. 332-346). doi:10.1117/12.593278
AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier -: art. no. 021102
Sobiesierski, A., Sandall, I. C., Smowton, P. M., Blood, P., Krysa, A. B., Brown, M. R., . . . Wilks, S. P. (2005). AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier -: art. no. 021102. APPLIED PHYSICS LETTERS, 86(2). doi:10.1063/1.1849847
2004
Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs Spacer layer
Walker, C. L., Sandall, I. C., & Smowton, P. M. (2004). Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs Spacer layer. In 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp. 212-213). Retrieved from https://www.webofscience.com/