2023
Moiré Superlattice Structure of Pleated Trilayer Graphene Imaged by 4D Scanning Transmission Electron Microscopy. (Journal article)
Wen, Y., Coupin, M. J., Hou, L., & Warner, J. H. (2023). Moiré Superlattice Structure of Pleated Trilayer Graphene Imaged by 4D Scanning Transmission Electron Microscopy.. ACS nano, 17(20), 19600-19612. doi:10.1021/acsnano.2c12179DOI: 10.1021/acsnano.2c12179
Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS<sub>2</sub> Semiconductor Monolayers. (Journal article)
Zhang, Q., Hou, L., Shautsova, V., & Warner, J. H. (2023). Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS<sub>2</sub> Semiconductor Monolayers.. ACS applied materials & interfaces, 15(14), 18012-18021. doi:10.1021/acsami.2c22014DOI: 10.1021/acsami.2c22014
2022
Ultrathin Lateral 2D Photodetectors Using Transition-Metal Dichalcogenides PtSe<sub>2</sub>–WS<sub>2</sub>–PtSe<sub>2</sub> by Direct Laser Patterning (Journal article)
Hou, L., Xu, W., Zhang, Q., Shautsova, V., Chen, J., Shu, Y., . . . Warner, J. H. (2022). Ultrathin Lateral 2D Photodetectors Using Transition-Metal Dichalcogenides PtSe<sub>2</sub>–WS<sub>2</sub>–PtSe<sub>2</sub> by Direct Laser Patterning. ACS Applied Electronic Materials, 4(3), 1029-1038. doi:10.1021/acsaelm.1c01194DOI: 10.1021/acsaelm.1c01194
2021
Large-Scale Uniform-Patterned Arrays of Ultrathin All-2D Vertical Stacked Photodetector Devices. (Journal article)
Zhang, Q., Hou, L., Lu, Y., Chen, J., Zhou, Y., Shautsova, V., & Warner, J. H. (2021). Large-Scale Uniform-Patterned Arrays of Ultrathin All-2D Vertical Stacked Photodetector Devices.. ACS applied materials & interfaces, 13(29), 34696-34704. doi:10.1021/acsami.1c05136DOI: 10.1021/acsami.1c05136
2020
Operational Limits and Failure Mechanisms in All-2D van der Waals Vertical Heterostructure Devices with Long-Lived Persistent Electroluminescence. (Journal article)
Hou, L., Zhang, Q., Shautsova, V., & Warner, J. H. (2020). Operational Limits and Failure Mechanisms in All-2D van der Waals Vertical Heterostructure Devices with Long-Lived Persistent Electroluminescence.. ACS nano, 14(11), 15533-15543. doi:10.1021/acsnano.0c06153DOI: 10.1021/acsnano.0c06153